Simulation of dynamics of phase transitions in CdTe by pulsed laser irradiation

Simulation of composition modification in ZnSe by nanosecond radiation of excimer laser

“…6). In the CdTe case [8] diffusion of the atoms in the melt proceeds with the same rates (D Cd = 11.3 Â 10 À5 cm 2 /s and D Te = 5.8 Â 10 À5 cm 2 /s [18]) and, hence, due to more intensive evaporation of the Cd atoms, the near-surface region becomes enriched with tellurium. In our case, diffusion coefficients of Zn and Se atoms on $one order differ from one another.…”

“…A numerical simulation of melting and crystallization induced in ZnSe by nanosecond irradiation of the KrF excimer laser (l = 248 nm, t = 20 ns) was carried out using our model [8] in which the components evaporation from the surface and their diffusion in the melt have been taken into account. Mass flux of the atoms evaporating in vacuum j is determined by pressure of saturated vapors according to the equation of phase equilibrium:…”

On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation

“…This is justified by the fact that electron-lattice thermalization time is in the order of ~10 −12 s for silicon and germanium [7], and similar time scales for the other materials under study. In addition, as we consider relatively low surface temperatures, below and near the melting point, we disregard evaporation phenomena, which, however, may slightly affect the melting process for compound semiconductors [30,31]. For correct simulations of laser-matter interaction processes, material thermophysical and optical properties (and their temperature dependences) are of fundamental importance.…”

Numerical Simulations of Temperature Dynamics During Cw Laser Irradiation of Silicon Microscale Strips on a Dielectric Substrate

“…To describe the melting process, we rewrite Eq. (1) to the following form [Zhvavyi 2006, Bulgakova 2010 (…”