Simulation of Ionic Populations in Hot Dense Plasmas via a New Method beyond the Average Atom Model

We demonstrate that the superconducting film resonator can be used to accurately and quantitatively measure the microwave dielectric loss tangent of a variety of materials. Compared to traditional dielectric resonator loaded metal cavity method, it has advantage of small sample size (*2-3 orders of magnitude smaller than the old method), and much higher sensitivity to measure small loss tangent values as small as 10 -5 at around 7 GHz band at cryogenic temperatures. This method can be utilized widely in study of mechanism of microwave loss at cryogenic temperature range, which is extremely important in superconducting microwave application areas, such as novel super quantum computers.

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Measurement of dielectric loss tangent at cryogenic temperature using superconducting film resonator

Zhang

Wang

2015

J Theor Appl Phys

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Radiative Transition Line Shape in Warm and Dense Argon Plasma: a Two-Centre Model Study

Meng¹,

Zhao²,

Yuan³

2008

Chinese Phys. Lett.

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A two-centre model is employed to study the electronic structure of argon plasma at a density of 1022 cm−3 and a temperature of 5eV. The model takes into account the influence of the nearest neighbour on the electronic structure of the radiator and gives a proper description of the transient molecular behaviour in dense plasmas where the mean interatomic distance can be the order of the orbital spatial extent. The orbital energies of quasi-molecular Ar2 against the interatomic distance are calculated in the framework of density functional theory. It is shown that the orbital energies are not monotonic functions of the distance because of two competitive effects: the repulsive potential between electrons and the attractive potential between electrons and nuclei. The characteristics of this two-centre system can be categorized by three regimes depending on the ratio between the electron wavelength and the interatomic distance: atomic regime, screened atomic regime, and quasi-molecular regime. This classification agrees qualitatively with the conclusion of full quantum-mechanical approach [Yonger S Met al 1988 Phys. Rev. Lett. 61 962].

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Impact of hydrogen forming gas annealing on microwave properties of Ba(Zn1/3Ta2/3)O3 dielectric ceramics

Sezer

Saka

2016

Int. J. Mod. Phys. B

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The effect of H2 forming gas annealing on the microwave properties of [Formula: see text] (BZT) dielectric ceramics has been studied. The structural, microwave, DC electrical and optical properties were analyzed by experiment results. With elevated temperature annealing, the microwave loss of BZT was increased. This trend correlated with high DC conductivity of annealed samples, as well as dampened phonons found in Raman spectra. These evidences, together, prove that the enhancement of oxygen vacancy defects induced by oxygen deficient sintering environment is one of the main extrinsic root causes for the high microwave loss in practical ceramic materials.

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Simulation of Ionic Populations in Hot Dense Plasmas via a New Method beyond the Average Atom Model

Cited by 3 publications

References 10 publications

Measurement of dielectric loss tangent at cryogenic temperature using superconducting film resonator

Measurement of dielectric loss tangent at cryogenic temperature using superconducting film resonator

Radiative Transition Line Shape in Warm and Dense Argon Plasma: a Two-Centre Model Study

Impact of hydrogen forming gas annealing on microwave properties of Ba(Zn1/3Ta2/3)O3 dielectric ceramics

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