Simulation of proximity printing

Henke, Wolfgang; Weiss, M.; Schwalm, Reinhold; Pelka, J.

doi:10.1016/0167-9317(90)90005-e

Cited by 21 publications

(12 citation statements)

References 15 publications

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“…The air gap is assumed to be homogeneously filled with SU-8 photoresist, and the propagation of the field inside original SU-8 photoresist is now treated as if there were no step in the refraction index behind the mask. Hence, the mask plane should be vertically shifted in such a way that the same field distribution at the air/photoresist interface [8] . Thus, diffraction and refraction effects can be handled simultaneously.…”

Section: Refractionmentioning

confidence: 99%

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The effect from the substrate reflection to the inclined UV lithography of SU-8 photoresist

Zhu¹,

Huang²,

Li³

et al. 2009

SPIE Proceedings

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Recently, the inclined UV lithography technology based on SU-8 negative thick photoresists has been mature and attractive due to the in-depth research of SU-8. With the increasing demand for the high-fidelity oblique structures of SU-8, the simulation of inclined UV lithography becomes more important. Based on the Fresnel-Kirchhoff diffraction theory, a simple light intensity distribution model is established in this paper by the Fresnel approximation and paraxial approximation solutions to simulate the 2D inclined UV lithography. The refraction and reflection at the air/photoresist interface and the reflection at the substrate surface are integrally considered in the modeling. The oblique SU-8 structures were fabricated on both glass wafers and silicon wafers, which show different reflection-induced profiles after development. According to the comparison of the simulation and experimental results, it is demonstrated that the substrate reflection has significant influence to the inclined UV lithography, and the validity of the model is also verified.

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Section: Refractionmentioning

confidence: 99%

“…As shown in Fig. 2, the reflected induced intensity I rQ1 at point Q 1 is equal to the product of the Fresnel reflectance at the photoresist/substrate interface multiplying the incident intensity I iQ2 at point Q 2 (the symmetric point of Q 1 ) [8] .…”

Section: Reflectionmentioning

confidence: 99%

The effect from the substrate reflection to the inclined UV lithography of SU-8 photoresist

Zhu¹,

Huang²,

Li³

et al. 2009

SPIE Proceedings

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“…For near-field diffraction profiles, required for the simulation of proximity and contact lithography [1][2][3], no such simple relationship exists. Near-field profiles can be computed with timeconsuming rigorous electromagnetic algorithms.…”

Section: Introductionmentioning

confidence: 97%

Simulation of proximity and contact lithography

Meliorisz

Evanschitzky

Erdmann

2007

Microelectronic Engineering

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“…So it becomes complicated and time-consuming to accurately control the dimensions of microstructures and to optimize the lithography processes by using conventional repeated-experiment method. Simulations are useful to deal with these problems [ 21 , 22 , 23 , 24 , 25 , 26 , 27 ], for the efficiency in understanding the fundamental effects of individual process parameters. In integrated circuits (IC) fields, lithography simulators have been playing an indispensable role in process optimization and design of micron, sub-micron, and nanometer devices for many years, and some simulation software tools have been commercialized.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Simulations for Ultraviolet Lithography Process of Thick SU-8 Photoresist

Zhou

Huang

2018

Micromachines

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Thick SU-8 photoresist has been a popular photoresist material to fabricate various mechanical, biological, and chemical devices for many years. The accuracy and precision of the ultraviolet (UV) lithography process of thick SU-8 depend on key parameters in the set-up, the material properties of the SU-8 resist, and the thickness of the resist structure. As feature sizes get smaller and pattern complexity increases, accurate control and efficient optimization of the lithography process are significantly expected. Numerical simulations can be employed to improve understanding and process design of the SU-8 lithography, thereby allowing rapid related product and process development. A typical comprehensive lithography of UV lithography of thick SU-8 includes aerial image simulation, exposure simulation, post-exposure bake (PEB) simulation, and development simulation, and this article presents an overview of the essential aspects in the comprehensive simulation. At first, models for the lithography process of the SU-8 are discussed. Then, main algorithms for etching surface evolvement, including the string, ray tracing, cellular automaton, and fast marching algorithms, are introduced and compared with each other in terms of performance. After that, some simulation results of the UV lithography process of the SU-8 are presented, demonstrating the promising potential and efficiency of the simulation technology. Finally, a prospect is discussed for some open questions in three-dimensional (3D) comprehensive simulation of the UV lithography of the SU-8.

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Simulation of proximity printing

Cited by 21 publications

References 15 publications

The effect from the substrate reflection to the inclined UV lithography of SU-8 photoresist

The effect from the substrate reflection to the inclined UV lithography of SU-8 photoresist

Simulation of proximity and contact lithography

Comprehensive Simulations for Ultraviolet Lithography Process of Thick SU-8 Photoresist

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