1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers
DOI: 10.1109/vtsa.1993.263649
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Simulation of read-disturb lifetime reduction in submicron EPROM devices

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Cited by 3 publications
(3 citation statements)
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“…The SiNW ONO device is turned on and off like the regular SiNW FET by the gate voltages of V GS = −8 V and V GS = 8 V, respectively, with a current on/off ratio ∼10 6 at V DS = 0.5 V. Then the I DS -V DS curves are measured at V GS = 0 V for the on and off states obtained by using write and erase voltage pulses of V GS = +20 and −20 V, respectively, with 1 s programming time. The current ratio between the on and off states is about 5 × 10 5 at V DS = 0.5 V. Note that off-state current increases with V DS as more stored charges tunnel out of the charge trapping layer at higher V DS [14,15].…”
Section: Resultsmentioning
confidence: 94%
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“…The SiNW ONO device is turned on and off like the regular SiNW FET by the gate voltages of V GS = −8 V and V GS = 8 V, respectively, with a current on/off ratio ∼10 6 at V DS = 0.5 V. Then the I DS -V DS curves are measured at V GS = 0 V for the on and off states obtained by using write and erase voltage pulses of V GS = +20 and −20 V, respectively, with 1 s programming time. The current ratio between the on and off states is about 5 × 10 5 at V DS = 0.5 V. Note that off-state current increases with V DS as more stored charges tunnel out of the charge trapping layer at higher V DS [14,15].…”
Section: Resultsmentioning
confidence: 94%
“…During the continuous 1000 time reading operation for a total of 40 s, the on-state current decays ∼8%, resulting from the loss of a certain number of charges from the nitride layer. The loss of charge is due to the thin TO between the SiNW and the nitride, and the read-disturb mechanism [14]. The device was then placed in an open circuit and re-measured after a waiting time (τ = 1800 s).…”
Section: Resultsmentioning
confidence: 99%
“…The I DS is continually monitored (i.e. [13] The device was then placed in an open circuit and remeasured after a waiting time (τ = 1800 s). The device is first measured at V GS = 0 V with very low off-state I DS current since no charges are stored in the nitride.…”
Section: Silicon Nanowire On Oxide/nitride/oxide Memory Test Strucmentioning
confidence: 99%