Simulation of Small-Pitch HgCdTe Photodetectors

Vallone, Marco; Goano, Michele; Bertazzi, Francesco; Ghione, Giovanni; Schirmacher, W.; Hanna, S.; Figgemeier, H.

doi:10.1007/s11664-017-5378-z

Cited by 24 publications

(5 citation statements)

References 57 publications

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“…A commercial simulation suite is employed, which is based on discretizing the differential operators with a stabilized finite-box method, and allows for great flexibility in the grid definition, enabling local refinements for critical regions (such as junctions between different materials and/or doping concentrations) [47]. Simulations take into account Fermi-Dirac statistics and incomplete dopant ionization, and employ temperature-and mole fraction-dependent material parameters according to [48] (Table I). The transport problem includes the SRH and Auger generation-recombination processes (modeled as in Ref.…”

Section: Dark Current In Barrier Detectors: Looking For Optimal Dopingmentioning

confidence: 99%

Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation

Vallone,

Alasio,

Tibaldi

et al. 2024

IEEE Photonics J.

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The dark current is a fundamental figure of merit to characterize the performance of high-sensitivity, low-noise mid-and far-infrared barrier photodetectors. In the context of HgCdTe barrier photodetectors, the trend is to use very low doping concentrations, in an attempt to minimize recombination processes. In the present work, through TCAD simulations, we delve deeper into the design of low-dark-current pBn detectors, showing the possible existence of an optimum doping. This occurrence is investigated and interpreted also by means of closed-form expressions for the lifetimes, emphasizing the role of the interplay between Auger and Shockley-Read-Hall generation processes.

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Section: Dark Current In Barrier Detectors: Looking For Optimal Dopingmentioning

confidence: 99%

Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation

Vallone,

Alasio,

Tibaldi

et al. 2024

IEEE Photonics J.

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“…The absorption coefficient α, is one of the most important parameters in determining the proportion of incident light absorbed for a given material thickness (L), something that is necessary for high QE photodiode design. For photon energies E ph greater and smaller than the reference energy E T (corresponding to the semiconductor band gap), the absorption coefficient of Hg 1−x Cd x Te for a range of alloy composition x, is given by: 32,33 All parameters in the above model have a dependence on the Hg 1−x Cd x Te alloy composition (x-value). In the above equation, E ph is the incident photon energy, which can be converted to the corresponding incident photon wavelength as follows:…”

Section: Quantum Efficiency Of Swir Hgcdtementioning

confidence: 99%

Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications

Akhavan

Umana‐Membreno

et al. 2022

J. Electron. Mater.

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In this paper, we study the limiting mechanisms and design criteria of HgCdTe photodetectors for extended shortwave infrared applications with ultra-high quantum efficiency (QE) in both n-on-p and p-on-n technologies. Numerical and analytical models are employed in order to study the possibility of achieving ultra-high QE eSWIR detectors for the operational wavelengths of approximately 2.0 μm, and our study shows that by proper design of absorber layer and doping density, such a detector can be engineered. Furthermore, we demonstrate that the Shockley–Read–Hall (SRH) lifetime, absorber layer doping density and absorber layer thickness all have an impact on the quantum efficiency whether the detector is used as a small-area pixel element in a focal plane array or as a discrete large-area detector for sensing applications.

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“…Recent calculations by Vallone et al [30] on small-pitch HgCdTe photvoltiac detectors show that working on pixel pitches of smaller than cut-off wavelength will have many benefits in terms of lower volume, weight or cost. To determine the limit of pitch scaling in LWIR HgCdTe IRFPAs, 3D electrical and optical simulations for 3 m, 5 m, and 10 m pitch were done.…”

Section: (A)] [19]mentioning

confidence: 99%

Recent infrared detector technologies, applications, trends and development of HgCdTe based cooled infrared focal plane arrays and their characterization

Bhan¹,

Dhar²

2019

Opto-Electronics Review

101

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Infrared thermal imaging, using cooled and uncooled detectors, is continuously gaining attention because of its wide military and civilian applications. Futuristic requirements of high temperature operation, multispectral imaging, lower cost, higher resolution (using pixels) etc. are driving continuous developments in the field. Although there are good reviews in the literature by Rogalski [1-4], Martyniuk et al. [5] and Rogalski et al. [6] on various types of infrared detectors and technologies, this paper focuses on some of the important recent trends and diverse applications in this field and discusses some important fundamentals of these detectors.

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Simulation of Small-Pitch HgCdTe Photodetectors

Cited by 24 publications

References 57 publications

Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation

Exploring Optimal Dark Current Design in HgCdTe Infrared Barrier Detectors: A TCAD and Semianalytic Investigation

Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications

Recent infrared detector technologies, applications, trends and development of HgCdTe based cooled infrared focal plane arrays and their characterization

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