Simulation of static and dynamic properties of edge-emitting multiple-quantum-well lasers

Abstract

This paper demonstrates simulation tools for edge-emitting multi quantum well (MQW) lasers. Properties of the strained MQW active region are simulated by eight-band kp calculations. Then, a 2D simulation along the transverse cross section of the device is performed based on a drift-diffusion model, which is self-consistently coupled to heat transport and equations for the optical field. Furthermore, a method is described, which allows for an efficient quasi 3D simulation of dynamic properties of multisection edge-emitting lasers.

Design and Simulation of Next-Generation High-Power, High-Brightness Laser Diodes

“…Sophisticated models were also introduced that solved the spatiotemporal dynamics of the lasers, but these models also used a 1-D electrical model in the lateral direction [26], [27]. Quasi-3-D models were introduced in [28] and [29], with the optical model separated into 1-D in the longitudinal direction and 2-D in the transverse cross section. The combination of the 2-D cross-section electrothermal model with the BPM was then introduced [30], [31].…”

Electronic States in Semiconductor Nanostructures and Upscaling to Semi-Classical Models

“…The stack consists of six 1% compressively strained 7 nm thick quantum wells (x = 0.239, y = 0.826), which are separated by 10 nm thick 0.3% tensile strained barriers (x = 0.291, y = 0.539), see [BHK03]. As confirmed by the calculation of the mini-band formation in the MQW structure [BHK03], the barrier width is such that the lowest states in the wells decouple, that means, they are strongly localized in the individual quantum wells. This allows to restrict ourselves in the following to single quantum well calculations.…”

“…In the following, we focus on a semi-classical carrier flow model, and on a specific part of radiative recombination; for models of the optical field, see [BGK00,BGH05,BKKR03,BHK03]. In particular, we deal with upscaling schemes for quantities such as the density of states, the optical response, and the optical peak gain, from electronic structure calculations as described in section 5.…”

“…12 for different temperatures. In [BHK03] it is discussed how to fit the calculated peak gain characteristics to a logarithmic model g(n) = g 0 log(n/n t ), which is used as a state equation in semi-classical equations. …”

“…Semi-classical models working on the device scale such as drift-diffusion equations are state of the art for the simulation of the electronic behavior of many microelectronic devices. For opto-electronic devices based on nanostructures they can be applied successfully, supposed the constitutive laws in these semi-classical models take into account quantum effects from smaller scale models for the embedded nanostructure [BGK00, BHK03,BKKR03,BGH05].…”