In this brief review, applications of lifetime distribution functions with two shape parameters for reliability analysis are introduced in advanced interconnect technologies. For the time-dependent dielectric breakdown analysis, the time-dependent clustering model is applied. Suppressing the trade-off between two shape parameters is required for an accurate estimation of the clustering parameter. Some statistical techniques, including the sudden-death test structure and the Bayesian inference, are reviewed. For simple electromigration evaluation on a chip-level, an adaption of the generalized Gamma distribution is proposed. The impacts of the circuit scale and the segment variations are investigated with the Monte-Carlo technique. This review suggests that variation control will become ever more important for advanced interconnect technology developments.