Simulation Study of Performance Degradation in β-Ga₂O₃ (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling

Abstract

Beta-gallium oxide (β-Ga2O3) devices exhibit the degradation of on-state characteristics compared with the theoretical expectation according the recent reports. Simulation of electrical properties in devices should, therefore, include model calibration valid up to such situation. In this paper, the anisotropic mobility modeling has been incorporated to calculate the electrical performances of β-Ga2O3 (001) vertical SBDs. This model parameters were revised through a series of reported experimental data, which presents that the electron mobility anisotropic ratio of 7 between two orthogonal directions ([100] and the normal of (001) orientation), resulting in much reduced mobility perpendicular to the device surface. Additionally, the forward characteristics and reverse recovery properties of β-Ga2O3 SBDs over range of 300–500 K were investigated by means of calibrated anisotropic mobility model. As a result, the on-resistance is much increased mainly leading to the degradation of the static forward mode, while a lower reverse current peak (Irr) for switching characteristics. The modified mobility modeling considering anisotropy provides a precise curve-fitting to the measurements of on-state characteristics of β-Ga2O3 SBDs, enabling a more accurate prediction of device performance.

Anisotropic optical and electric properties of β-gallium oxide

“…This electron phonon interaction is the coupling of electrons and polarized optical phonons (Bu1 mode), which is essentially a long-range Coulomb interaction and mainly affects the electron transportation in low-electric fields. According to theoretical calculations, it is the anisotropic electron-phonon coupling that leads to the anisotropic mobility of β-Ga 2 O 3 in low electric field [46] . Resulting from the highly anisotropic crystal structure, the Brillouin zone of β-Ga 2 O 3 is anisotropic as well [Fig.…”

Investigation of Ga2O3/diamond heterostructure solar-blind avalanche photodiode via TCAD simulation

“…simulation have not been completely included in the TCAD software. [13] Although the simulations for several devices using diamond or Ga 2 O 3 have been reported, such as Schottky diodes (SBDs) and field effect transistors (FETs), [14][15][16][17][18] as far as we know, no such research on Ga 2 O 3 /diamond detectors has emerged yet. In this work, the Fermi-Dirac distribution is applied to count the carrier distribution in each region of the device, and the drift-diffusion model combined with the Poisson equation and the current continuity equation is used to calculate the current characteristics and electric field distribution of the devices.…”