Simulations for improved heterostructure Gunn oscillator based on transit region doping variations

Vaidyanathan, R. Muthu; Joshi, R. P.

doi:10.1049/el:19910975

Cited by 5 publications

(2 citation statements)

References 1 publication

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“…Thus the doping level of the drift region was chosen to be much larger than typically used for GaAs or InP Gunn devices. 45,46 Since the mobility of GaN is lower in comparison to both GaAs and InP, the time required to build up a stable domain is higher for the same background doping. The higher doping chosen here helps offset the lower mobility value.…”

Section: Monte Carlo Simulation Detailsmentioning

confidence: 99%

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Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation

Joshi

Sridhara

Shah

et al. 2003

Journal of Applied Physics

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studies of transferred electron oscillators based on bulk wurtzite GaN are presented. Two structures have been examined: ͑i͒ devices with the conventional single notch structure, and ͑ii͒ repetitive structures with serial segments to fashion a ''multiple domain'' device. Wurtzite material has been chosen because of the higher drift velocity and because analytical expressions for the band structure have recently become available. Performance parameters of interest such as the operating frequency, output power, and conversion efficienc are calculated. Variations due to changes in temperature, biasing voltage, and device length are also included. It is shown that multidomain Gunn diodes can lead to significan improvements in output power over conventional, single-transit structure, and so such multiple GaN diodes merit serious experimental study.

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Section: Monte Carlo Simulation Detailsmentioning

confidence: 99%

“…The room temperature value is higher than that reported for GaAs devices. 45 Finally, Monte Carlo simulations were performed for GaN diodes with multiple transit segments. The resulting power output as a function of the frequency is given in Fig.…”

Section: --T=300kimentioning

confidence: 99%

Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation

Joshi

Sridhara

Shah

et al. 2003

Journal of Applied Physics

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Ensemble Monte Carlo particle simulation of nonuniformly doped submicrometer gunn diodes

Khrenov

Ryzhii

Kartashova

1994

Solid-State Electronics

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Hydrodynamic analysis of submicrometer n+nn+ diodes for microwave generators

Gruzhinskis

Starikov

Shiktorov

et al. 1992

Applied Physics Letters

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We present a theoretical investigation on the electrical behavior of submicrometer n+nn+ diode microwave generators. To this end we adopt a mixed scheme which uses space-homogeneous and stationary Monte Carlo simulations to provide the input parameters for a hydrodynamic analysis of the diode performances. Comparison between GaAs and InP made devices working at 400 K give similar results by predicting generation frequencies up to 700 GHz for an active region length of 0.2 μm.

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Simulations for improved heterostructure Gunn oscillator based on transit region doping variations

Cited by 5 publications

References 1 publication

Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation

Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation

Ensemble Monte Carlo particle simulation of nonuniformly doped submicrometer gunn diodes

Hydrodynamic analysis of submicrometer n+nn+ diodes for microwave generators

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