Simultaneous impurity doping with Zn and Se in AlGaInP by MOVPE

Anayama, C.; Sekiguchi, Hiroshi; Kondō, Makoto; Domen, K.; Tanahashi, Takahiko

doi:10.1007/bf02661663

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Laser Structure and Fabrication1

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1993

1995

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Cited by 9 publications

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“…We can form a lateral pn junction by growing simultaneously doped layers on a patterned substrate which has different orientations [8,16,17]. Alternately doping with Zn and Se on a patterned substrate can also form a lateral pn junction [6, 8,16].…”

Section: Laser Structure and Fabricationmentioning

confidence: 99%

One-step MOVPE-grown AlGaInP visible laser with round-beam-spot, small-astigmatism, and high-power characteristics

Tanahashi

Furuya

Anayama

et al.

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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We developed a real-index guided AlGaInP visible laser, a selfaligned stepped substrate (S3) laser, grown by one-step metalorganic vapor phase epitaxy (MOVPE) using simultaneous doping or alternate doping with Zn and Se on a stepped substrate. These doping techniques are based on the dependence of the dopant incorporation on the substrate orientation. As the substrate orientation changes from (100) to (311)A, the effective distribution coefficient of Zn increases and that of Se decreases. The S3 laser has a beam astigmatism of less than 1 pm and small aspect ratio of 1.5, and stable high-power operation of 35 mW at 50°C.

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Section: Laser Structure and Fabricationmentioning

confidence: 99%