Single-crystal GaN layer converted from β-Ga₂O₃films and its application for free-standing GaN

Abstract

Hexagonal GaN has been obtained by nitridating β-Ga2O3 film despite structural mismatch between β-Ga2O3 and GaN, and the conversion process has been investigated systematically.

Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga2O3/n-GaN MIS heterojunction light-emitting diodes

“…34 is, b-Ga 2 O 3 (% 201) is parallel to GaN (002) in XRD analysis. 14 According to our above-mentioned results, the lattice mismatch between b-Ga 2 O 3 (% 201) and GaN (002) is as low as 4.81%, which is obtained by (d 1 À d 2 )/d 1 , implying that b-Ga 2 O 3 can be easily prepared on the (002) plane of the GaN substrate. 13,14 Excitingly, the low lattice mismatch between b-Ga 2 O 3 and GaN alleviates interface defects and improves device performance.…”

“…14 According to our above-mentioned results, the lattice mismatch between b-Ga 2 O 3 (% 201) and GaN (002) is as low as 4.81%, which is obtained by (d 1 À d 2 )/d 1 , implying that b-Ga 2 O 3 can be easily prepared on the (002) plane of the GaN substrate. 13,14 Excitingly, the low lattice mismatch between b-Ga 2 O 3 and GaN alleviates interface defects and improves device performance. 37 3.3.…”

“…32 XRD analysis reveals that the (002) plane of wz-GaN is parallel to the β-Ga 2 O 3 (2̄01) plane, which can be recorded as β-Ga 2 O 3 (2̄01)‖wz-GaN(002). 14 Fig. 2(b) shows the surface SEM image of Ga 2 O 3 grown on the GaN substrate.…”

“…32 XRD analysis reveals that the (002) plane of wz-GaN is parallel to the b-Ga 2 O 3 (% 201) plane, which can be recorded as b-Ga 2 O 3 (% 201)8 wz-GaN(002). 14 33 In Fig. 2(c), the crosssectional SEM analysis determined that the thicknesses of Au, Ga 2 O 3 and GaN were 29 nm, 241 nm and 7 mm, respectively.…”

“…Due to the small lattice mismatch between Ga 2 O 3 (% 201) and GaN (002), the Ga 2 O 3 (% 201)/GaN (002) heterojunction is easy to be successfully prepared and exhibits a higher internal quantum efficiency. 13,14 Encouragingly, b-Ga 2 O 3 can serve as an excellent candidate to improve the luminous efficiency of LEDs, due to that its large bandgap can be used to construct a wide bandgap insulator barrier. [15][16][17][18] For example, Lin et al prepared high-performance p-GaN/i-Ga 2 O 3 /n-Ga 2 O 3 :Si deep UV LEDs using i-Ga 2 O 3 as the active insulator layer, making the n-type layer have a higher bandgap energy in this n-i heterojunction.…”