Single crystal growth of GaN using a Ga melt in Na vapor

Yamada, Takahiro; Yamane, Hisanori; Iwata, Hirokazu; Sarayama, Seiji

doi:10.1016/j.jcrysgro.2005.04.022

Cited by 18 publications

(19 citation statements)

References 29 publications

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“…The width of 24 arcsec. was reported for 10.0 diffraction peak of a GaN crystal grown by heating Ga melt in a Na vapor at 5.0 MPa of N 2 without Li 3 N additive [12]. The wider value of the present columnar crystal might be caused not only by lower crystal lattice perfection but also by the small steps on the (00.1) plane as observed in figure 2 (b).…”

Section: Resultssupporting

confidence: 47%

“…However, GaN formation was not observed at 0.2 MPa of N 2 . [12], the obtained crystals had a long prismatic morphology with well-developed {10.0} planes.…”

Section: Resultsmentioning

confidence: 89%

“…www.crt-journal.org of 5 MPa absorbed Na from the vapor and changed into a Na-Ga melt [12,13]. Colorless and transparent GaN single crystals grew from this melt and on the wall of a boron nitride crucible at the beginning of GaN formation.…”

Section: Introductionmentioning

confidence: 99%

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Preparation of GaN crystals by heating a Li₃N‐added Ga melt in Na vapor and their photoluminescence

Yamada¹,

Yamane

Ohta

et al. 2006

Cryst. Res. Technol.

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GaN crystals were prepared by heating a Ga melt with 1 at% Li 3 N against Ga at 750°C in Na vapor under N 2 pressures of 0.4-1.0 MPa. The GaN crystals grown at 1.0 MPa of N 2 were colorless and transparent prismatic, having a size of approximately 0.7 mm in length. A secondary ion mass spectrometry (SIMS) showed the contaminant of lithium in the obtained crystals. A large broad yellow band emission peak of 2.28 eV was observed at room temperature in the photoluminescence spectrum in addition to the near band emission peak of GaN at 3.39 eV and a small broad satellite emission at 3.24 eV.

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Section: Resultssupporting

confidence: 47%

“…However, GaN formation was not observed at 0.2 MPa of N 2 . [12], the obtained crystals had a long prismatic morphology with well-developed {10.0} planes.…”

Section: Resultsmentioning

confidence: 89%

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Preparation of GaN crystals by heating a Li₃N‐added Ga melt in Na vapor and their photoluminescence

Yamada¹,

Yamane

Ohta

et al. 2006

Cryst. Res. Technol.

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“…8(a). 40),41) Figure 3(b) is a schematic drawing of the apparatus used for single crystal growth of GaN by using Na vapor. The boiling point of Na is 1156 K and Na has a relatively high vapor pressure at 973-1073 K. The Na vapor was probably taken into the Ga melt with N and formed a N-containing Na-Ga melt before nucleation of GaN on the surface of the BN crucible.…”

Section: Single Crystal Growth Of Ganmentioning

confidence: 99%

Synthesis of nitrides and silicon carbide using sodium

Yamane

2009

J. Ceram. Soc. Japan

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Studies on the synthesis of nitrides, nitride-related compounds and silicon carbide by using Na as a flux and reaction enhanced medium are reviewed. Using a Na melt, ternary and quaternary nitrides and nitride-related compounds containing Ba and Sr were prepared at around 1000 K and N2 pressure below about 10 MPa. Crystal growth of a binary nitride GaN by heating Ga and N2 with Na was also found during the studies of the multinary compounds. AlN powder was prepared above the Al melting temperature of 932 K. Single crystals of CrN and Mn2N were obtained by heating Cr and Mn with a Na-Ga flux and a Na-In flux, respectively. β-type SiC powder and porous bulks were prepared by reaction of Si and fullerene with Na or Si and amorphous carbon with Na at 1000 K. The role of Na in the formation of the nitrides and silicon carbide is herein discussed.

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“…Recently, we found that a Ga melt heated at 720 -800°C in Na vapor under a N 2 pressure of 5 MPa absorbed Na from the vapor and changed into a Na-Ga melt [6,7]. Colorless transparent prismatic GaN single ____________________ crystals grew from a crucible wall in the melt, while hopper crystals grew mainly from the wall at the marginal part of the melt.…”

Section: Introductionmentioning

confidence: 99%

Luminescence of GaN single crystals prepared by heating a Ga melt in Na–N₂ atmosphere

Yamada¹,

Yamane²,

Goto³

et al. 2007

Cryst. Res. Technol.

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Colorless transparent prismatic crystals (0.5-2.0 mm long) and hopper crystals (1.0-2.5 mm long) of GaN were prepared by heating a Ga melt at 800°C in Na vapor under N 2 pressures of 7.0 MPa for 300 h. The photoluminescence (PL) spectrum of a prismatic crystal at 4 K showed the emission peaks of neutral donorbound exciton (D 0 -X) and free exciton (X A ) at 3.472 eV and 3.478 eV, respectively, in the near band edge region. The full-width at half-maximum (FWHM) of (D 0 -X) peak was 1.9 meV. The emission peaks of a donor-acceptor pair transition (D 0 -A 0 ) and its phonon replicas were observed in a lower energy range (2.9-3.3 eV). The emission peaks of the D 0 -A 0 and phonon replicas were also observed in the cathodoluminescence (CL) spectrum at 20 K. The (D 0 -X) PL peak of a hopper crystal at 4 K was at 3.474 eV (2.1 meV higher), having a FWHM of 6.1 meV which was over 3 times larger than that of the prismatic crystal. A strong broad band with a maximum intensity around 1.96 eV was observed for the hopper crystals in the CL spectrum at room temperature.

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Single crystal growth of GaN using a Ga melt in Na vapor

Cited by 18 publications

References 29 publications

Preparation of GaN crystals by heating a Li₃N‐added Ga melt in Na vapor and their photoluminescence

Preparation of GaN crystals by heating a Li₃N‐added Ga melt in Na vapor and their photoluminescence

Synthesis of nitrides and silicon carbide using sodium

Luminescence of GaN single crystals prepared by heating a Ga melt in Na–N₂ atmosphere

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Single crystal growth of GaN using a Ga melt in Na vapor

Cited by 18 publications

References 29 publications

Preparation of GaN crystals by heating a Li3N‐added Ga melt in Na vapor and their photoluminescence

Preparation of GaN crystals by heating a Li3N‐added Ga melt in Na vapor and their photoluminescence

Synthesis of nitrides and silicon carbide using sodium

Luminescence of GaN single crystals prepared by heating a Ga melt in Na–N2 atmosphere

Contact Info

Product

Resources

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Preparation of GaN crystals by heating a Li₃N‐added Ga melt in Na vapor and their photoluminescence

Preparation of GaN crystals by heating a Li₃N‐added Ga melt in Na vapor and their photoluminescence

Luminescence of GaN single crystals prepared by heating a Ga melt in Na–N₂ atmosphere