Single crystal ß‐Si₃N₄ fibers obtained by self‐propagating high temperature synthesis**

Abstract

The growth of single crystal β‐silicon nitride fibers (see Figure) several millimeters long through the application of self‐propagating high‐temperature synthesis is demonstrated. Advantages include the igh purity of the fibers obtained, the fact that the fibers are stable up to 2000°C, and the low cost of the SHS process .

Catalystless synthesis of crystalline Si3N4/amorphous SiO2 nanocables from silicon substrates and N2

“…In fact, as far as we know, there is no report so far about the crystalline SiO 2 growth with or without catalyst at the temperature less than 1300°C. As a contrast, crystalline Si 3 N 4 have been grown in several ways [2][3][4][5][6][7][8][9][10][11][12], even below 1200°C [21]. That is, the crystallization of the Si 3 N 4 is easier to realize than that of the SiO 2 .…”

“…Traditional approaches are carbothermal reduction and nitration of SiO 2 -containing mixtures at temperatures higher than 1300°C [2][3][4][5][6][7]. Besides, combustion [8], chemical vapor deposition [9], vaporliquid-solid [10] and vapor-solid [11,12] methods have also been used. Very recently, Kim et al [13] have synthesized high-density silicon nitride nanowires directly from the silicon substrate with catalysts.…”

“…The Si 3 N 4 nanowires are expected to have some electric, optical and mechanical properties superior to its bulk counterpart, and thus have been synthesized and studied in various approaches [2][3][4][5][6][7][8][9][10][11][12]. Traditional approaches are carbothermal reduction and nitration of SiO 2 -containing mixtures at temperatures higher than 1300°C [2][3][4][5][6][7].…”

Self-propagating high-temperature synthesis of TiC–WC composite materials

“…Ignition is usually produced by means of an electric or calorific device and combustion front propagation is made at high speeds (1-100 mm/s), favoured if powders are compacted. As advantages we could mention the low energetic cost, its productivity or the high yields obtained [1,[6][7][8][9][10][11].…”

A Novel Approach to Silicon‐Nanowire‐Assisted Growth of High‐Purity, Single‐Crystalline β‐Si3N4 Nanowires

“…Si 3 N 4 nanomaterials, especially one-dimensional Si 3 N 4 nanowires (Si 3 N 4 NWs), have better thermomechanical properties than the bulk material because of the special geometric construction and small size. [1] To date, few techniques have been developed to obtain Si 3 N 4 nanomaterials, which include carbothermal reduction of silica-containing compounds, [2][3][4] direct nitridation of silicon powders, [5,6] CVD, [7,8] combustion synthesis, [9,10] and oxide-assisted growth. [11][12][13][14] Cui and Stoner [15] and Kim et al [16] fabricated Si 3 N 4 NWs on silicon wafers by applying Fe or Fe/Ga as catalysts.…”