Single-Crystalline Ferroelectric Thin Films by Ion Implantation and Direct Wafer Bonding

Szafraniak, I.; Radu, Ionut; Scholz, Roland; Alexe, Marin; Gösele, U.

doi:10.1080/10584580390259452

Cited by 24 publications

(11 citation statements)

References 5 publications

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“…18 The minimum implanted hydrogen dose to enable blistering can be estimated to be: ⌽ min =8␥ /3k B T, where ␥ is a surface energy and k B is Boltzmann's constant. 19,20 Considering the surface energy of BaTiO 3 , one can estimate the minimum dose to be greater than 2 ϫ 10 15 ions/ cm 2 , which is consistent with the reported values for other ferroelectric materials. 21 The ion dose used in this study ͑Ͼ1 ϫ 10 16 cm −2 ͒ was therefore high enough for cavity growth and blistering, Fig.…”

Section: Cavity Formation and Real Hydrogen Behaviorsupporting

confidence: 77%

Single crystalline BaTiO3 thin films synthesized using ion implantation induced layer transfer

Park

Diest

Atwater

2007

Journal of Applied Physics

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Layer transfer of BaTiO 3 thin films onto silicon-based substrates has been investigated. Hydrogen and helium ions were co-implanted to facilitate ion-implantation-induced layer transfer of films from BaTiO 3 single crystals. From thermodynamic equilibrium calculations, we suggest that the dominant species during cavity nucleation and growth are H 2 , H + , H 2 O, Ba 2+ and Ba-OH, and that the addition of hydrogen to the Ba-Ti-O system can effectively suppress volatile oxide formation during layer transfer and subsequent annealing. After ion implantation, BaTiO 3 layers contain microstructural defects and hydrogen precipitates in the lattice, but after layer transfer, the single crystal is found to be stoichiometric. Using direct wafer bonding and layer splitting, single crystal BaTiO 3 thin films were transferred onto amorphous Si 3 N 4 and Pt substrates. Micro-Raman spectroscopy indicated that the density of defects generated by ion implantation in BaTiO 3 can be significantly reduced during post-transfer annealing, returning the transferred layer to its single crystal state. Characterization using piezoresponse force microscopy shows that the layer transferred thin films are ferroelectric, with domain structures and piezoresponse characteristics similar to that of bulk crystals.

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Section: Cavity Formation and Real Hydrogen Behaviorsupporting

confidence: 77%

Single crystalline BaTiO3 thin films synthesized using ion implantation induced layer transfer

Park

Diest

Atwater

2007

Journal of Applied Physics

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“…Moreover, using the already mentioned bonding process, successful layer transfer of single-crystalline SrTiO3 has been achieved by Smart Cut TM [32] More recently, LiNbO 3 single-crystalline films with embedded metal electrode were fabricated using the Smart Cut TM technology [33] for the realization of bulk acoustic wave (BAW) resonators. The crystalline piezoelectric properties of the transferred LiNbO3 have been characterized and showed equivalent to those of bulk materials.…”

Section: Ecs Transactions 33 (4) 601-611 (2010)mentioning

confidence: 99%

(Invited) In Memoriam Ulrich Gösele: Wafer Bonding à la Carte

Radu

2010

ECS Trans.

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The modern day wafer bonding is inspired by the pioneering work of Prof. Dr. Ulrich Gösele in science and technology of direct bonding. Gösele's research helped in understanding of the fundamental mechanisms and thus revealing the technological interest of this technology. The paper reviews the results of basic studies in the area of wafer direct bonding of semiconductor and ferroelectric materials. Recent advances of the wafer bonding technology for the fabrication of advanced engineered substrates and 3D stacking are discussed.

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“…13 They also showed that the transferred ferroelectric thin films retain single-crystal properties of good crystallinity and ferroelectricity. 13,14 However, to date, the cavity-growth mechanisms operative during layer splitting of ferroelectric materials and the mechanistic role of hydrogen during thermal annealing have not been reported at the level of detail as has been reported for silicon. Furthermore, the chemical and structural effects of implanted gas ͑hydrogen or helium͒ in ferroelectric matea͒ Author to whom correspondence should be sent; electronic mail: ypark@caltech.edu b͒ Electronic mail: lixiao@engr.sc.edu rials on the piezoelectric and ferroelectric properties of the transferred thin films are still unknown.…”

Section: Introductionmentioning

confidence: 99%

“…[5][6][7] Recently, layer splitting and transfer of the ferroelectric materials and other crystalline perovskite oxide materials such as LiNbO 3 , LiAlO 3 , KTaO 3 , SrTiO 3 , and BaTiO 3 also have been reported, using wet etching and anodic bonding combined with ion-implantation-induced layer transfer methods. [8][9][10][11][12][13][14] Szafraniak et al reported that microbubbles were formed at the ion projected range as a result of high-dose hydrogen implantation. 13 They also showed that the transferred ferroelectric thin films retain single-crystal properties of good crystallinity and ferroelectricity.…”

Section: Introductionmentioning

confidence: 99%

“…[8][9][10][11][12][13][14] Szafraniak et al reported that microbubbles were formed at the ion projected range as a result of high-dose hydrogen implantation. 13 They also showed that the transferred ferroelectric thin films retain single-crystal properties of good crystallinity and ferroelectricity. 13,14 However, to date, the cavity-growth mechanisms operative during layer splitting of ferroelectric materials and the mechanistic role of hydrogen during thermal annealing have not been reported at the level of detail as has been reported for silicon.…”

Section: Introductionmentioning

confidence: 99%

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Nanomechanical characterization of cavity growth and rupture in hydrogen-implanted single-crystal BaTiO3

Park

Nardi

et al. 2005

Journal of Applied Physics

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A thermodynamic model of cavity nucleation and growth in ion-implanted single-crystal BaTiO 3 layer is proposed, and cavity formation is related to the measured mechanical properties to better understand hydrogen implantation-induced layer transfer processes for ferroelectric thin films. The critical radius for cavity nucleation was determined experimentally from blistering experiments performed under isochronal anneal conditions and was calculated using continuum mechanical models for deformation and fracture, together with thermodynamic models. Based on thermodynamic modeling, we suggest that cavities grow toward the cracking criteria at a critical blister size whereupon gas is emitted from ruptured cavities. The main driving force for layer splitting is the reduction of the overall elastic energy stored in the implanted region during the cavity nucleation and growth as the gaseous H 2 entrapped within the cavities is released. Nanoindentation measurements reveal locally the mechanical property changes within the vicinity of a single cavity. Using the measured mechanical properties at the single-cavity level, we developed three-dimensional strain and stress profiles using finite element method.

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Single-Crystalline Ferroelectric Thin Films by Ion Implantation and Direct Wafer Bonding

Cited by 24 publications

References 5 publications

Single crystalline BaTiO3 thin films synthesized using ion implantation induced layer transfer

Single crystalline BaTiO3 thin films synthesized using ion implantation induced layer transfer

(Invited) In Memoriam Ulrich Gösele: Wafer Bonding à la Carte

Nanomechanical characterization of cavity growth and rupture in hydrogen-implanted single-crystal BaTiO3

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