Single crystalline GaN grown on porous Si(111) by MOVPE

Abstract

In this work, GaN growth on porous Si(111) will be reported. The porosity of the substrates was 30% or 50%. In the latter case, various thicknesses, from 0.6 µm to 10 µm, were investigated. The morphology of the GaN surfaces was analyzed by optical interference microscopy. The crystalline quality of the epitaxial layers was characterized by High Resolution X-Ray Diffraction (HR-XRD) and cross-sectional Transmission Electron Microscopy (TEM). A Full Width at Half Maximum (FWHM) of the X-ray symmetric rocking curve (0002) 2θ − ω scan of 290 arc sec was obtained for a 1 µm thick GaN layer, which is comparable with that of GaN grown on bulk Si(111) substrates.

Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%

“…Some of the previous studies include the use of Al x Ga 1 À x N-based stress-compensating buffer structures [2][3][4], insertion of multiple low-temperature AlN interlayers [5][6][7], strain-relieving superlattice structures [8], sub-monolayer deposition of in-situ SiN x followed by coalescence growth [3,4], selective-area-growth (SAG) or growth on patterned mesa structures [9][10][11], and growth on porous Si [12][13][14].…”