Single Domain Spin Manipulation by Electric Fields in Strain Coupled Artificial Multiferroic Nanostructures

Buzzi, M.; Chopdekar, Rajesh V.; Hockel, Joshua L.; Bur, Alexandre; Wu, Tao; Pilet, N.; Warnicke, Peter; Carman, Gregory P.; Heyderman, Laura J.; Nolting, F.

doi:10.1103/physrevlett.111.027204

Cited by 202 publications

(203 citation statements)

References 22 publications

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“…Similar effect can be observed in Py/YMO herterostructure as well [31]. In 2013, Buzzi et al [32] observed a 90° rotation of magnetization due to the switching of out-of-plane ferroelectric polarization in artificial multiferroic nanostructures (arrays of Ni on PMN-PT substrates). The magnetization rotation was non-volatile and reversible.…”

Section: Science China Materialssupporting

confidence: 53%

Magnetoelectric coupling across the interface of multiferroic nanocomposites

Yao

Lin

et al. 2015

Sci. China Mater.

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In recent decades, magnetoelectric effect in multiferroic materials has attracted extensive attention owing to the upcoming demands for new-generation multi-functional magnetoelectronic devices, such as transducer, sensor and so on. This gives people a strong push to explore the multiferroic materials with a reduced dimension and effective coupling between electric and magnetic orderings, especially at room temperature. Due to the weak magnetoelectric coupling strength in sing-phase multiferroic materials, scientists start to design nanocomposites and artificial nanostructures with strong coupling among order parameters (lattice, charge, spin and orbital). In this review, we will introduce recent major progresses of magnetoelectric coupling in multiferroic nanocomposites across their interfaces from the following four aspects: strain effect, charge transfer, magnetic exchange interaction and orbital hybridization, based on their coupling mechanisms. Through a full understanding of the above coupling among these orderings, it is possible to achieve the nanoscale modulation of magnetization (ferroelectric polarization) by external electric (magnetic) field. Apart from the magnetoelectric coupling, those artificially functional nanocomposites provide us a platform to explore and study the emerging physical phenomena so that we can design self-assembled nanostructures to tailor novel functionalities in future applications.

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Section: Science China Materialssupporting

confidence: 53%

Magnetoelectric coupling across the interface of multiferroic nanocomposites

Yao

Lin

et al. 2015

Sci. China Mater.

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“…[27][28][29][30] There are also several theoretical predications 31-33 that such a method will dissipate only a few atto-Joules (aJ) of energy to write data. This establishes the promise of using strain to control the resistance of an MTJ for ultra-energy-efficient memory applications.…”

Section: -21mentioning

confidence: 99%

“…[16][17][18][19][20][21] It has been widely investigated in various piezoelectric/ferromagnetic bilayer thin films [22][23][24][25][26] or nano-structures. [27][28][29][30] There are also several theoretical predications [31][32][33] that such a method will dissipate only a few atto-Joules (aJ) of energy to write data. This establishes the promise of using strain to control the resistance of an MTJ for ultra-energy-efficient memory applications.…”

mentioning

confidence: 99%

Giant voltage manipulation of MgO-based magnetic tunnel junctions via localized anisotropic strain: A potential pathway to ultra-energy-efficient memory technology

Zhao

Jamali

D'Souza

et al. 2016

Applied Physics Letters

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Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices. *Corresponding author. Tel: (612) 625-9509. E-mail: jpwang@umn.edu 2 Information storage technology is constantly challenged by an increasing demand for storage units that are small, retain information for the longest time, and dissipate miniscule amount of energy to store (write) and retrieve (read) information. Magnetic random access memory (MRAM) meets these requirements to a large extent and has been proposed as a universal storage device for computer memory. [1][2][3] In MRAM technology, magnetic tunneling junctions (MTJ) comprise the main storage cells. Low-energy writing of bits requires an electrically tunable mechanism to reorient the magnetization of the MTJ. However, the widely studied switching mechanisms based on utilizing current induced spin-transfer-torques (STT) 4,5 or spin-orbit-torques (SOT) 6-8 incur high energy dissipation because of the relatively large writing current density. 9,10In recent years, several mechanisms based on using voltage to control magnetization have emerged as promising routes for ultra-low power writing of data. 11-15 Among these approaches, the strain induced control of the magnetic anisotropy in multiferroic heterostructures (a magnetostrictive layer elastically coupled with an underlying piezoelectric layer) stands out as a remarkably energyefficient switching mechanism. 16-21It has been widely investigated in various piezoelectric/ferromagnetic bilayer thin films [22][23][24][25][26] or nano-structures. [27][28][29][30] There are also several theoretical predications 31-33 that such a method will dissipate only a few atto-Joules (aJ) of energy to write data. This establishes the promise of using strain to control the resistance of an MTJ for ultra-energy-efficient memory applications.The key for strain control of the in-plane magnetization is that the in-plane strain should be anisotropic. In most of the previous reports, [24][25][26][27]34 single crystalline piezoelectric substrates Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT...

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“…Note that the scale of magnetic island is down to 100 nm, which makes both the fabrication and characterization difficult. Moreover, the evolution of magnetization under electric fields for nanomagnet depends strongly on the FE domain state below it 32,61 and is different from that of the continuous FM film. 21,23,56 Despite all this, experimental realization of this proposition will be an important progress for the purely electrical modulation of magnetism and for new generation of spintronic devices.…”

mentioning

confidence: 99%

Research Update: Electrical manipulation of magnetism through strain-mediated magnetoelectric coupling in multiferroic heterostructures

Chen

Zhao

2016

APL Materials

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Electrical manipulation of magnetism has been a long sought-after goal to realize energy-efficient spintronics. During the past decade, multiferroic materials combining (anti)ferromagnetic and ferroelectric properties are now drawing much attention and many reports have focused on magnetoelectric coupling effect through strain, charge, or exchange bias. This paper gives an overview of recent progress on electrical manipulation of magnetism through strain-mediated magnetoelectric coupling in multiferroic heterostructures.

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Single Domain Spin Manipulation by Electric Fields in Strain Coupled Artificial Multiferroic Nanostructures

Cited by 202 publications

References 22 publications

Magnetoelectric coupling across the interface of multiferroic nanocomposites

Magnetoelectric coupling across the interface of multiferroic nanocomposites

Giant voltage manipulation of MgO-based magnetic tunnel junctions via localized anisotropic strain: A potential pathway to ultra-energy-efficient memory technology

Research Update: Electrical manipulation of magnetism through strain-mediated magnetoelectric coupling in multiferroic heterostructures

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