Single-Electron MOS Memory with a Defined Quantum Dot Based on Conventional VLSI Technology

Sung, Suk-Kang; Kim, Dae Hwan; Sim, Jaesung; Kim, Kyung Rok; Lee, Yong Kyu; Lee, Jong Duk; Chae, Seung‐Hoon; Kim, Byung Man; Park, Byung‐Gook

doi:10.1143/jjap.41.2606

Cited by 5 publications

(4 citation statements)

References 5 publications

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“…The steplike ⌬V th ͑threshold voltage shift͒ behavior has also been observed in nc-Si structures by other researchers and is convincingly attributed to the single-electron trapping effect. 16,17 Of course, a more direct way to observe the single-electron effect is the measurement of the oscillation in the drain current of a MOS field-effect transistor ͑MOSFET͒ with nc-Si embedded in the gate oxide. 3,18 However, such a measurement requires that the transistor size must be very small ͑typically in the order of 10 −16 m 2 ͒.…”

mentioning

confidence: 99%

Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams

Chen

Zhao

et al. 2006

Journal of Applied Physics

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A nanocrystal Si ͑nc-Si͒ distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower than that of pure SiO 2 structure, and it decreases with the nc-Si concentration. The phenomenon is attributed to the reduction of the effective thickness of the tunneling oxide. The application of a positive or negative voltage causes electron or hole trapping in the nc-Si, leading to a positive or negative flatband voltage shift, respectively. A steplike flatband voltage shift as a function of charging voltage is observed, suggesting single electron or hole trapping in the nc-Si at room temperature. On the other hand, the nc-Si structure shows good charge-retention characteristics also.

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mentioning

confidence: 99%

Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams

Chen

Zhao

et al. 2006

Journal of Applied Physics

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“…[13][14][15][16] The SIT patterning process is well adapted to state-of-the-art nanoelectronics developments. [17][18][19][20][21] Furthermore, the double patterning can be conducted twice to achieve quadruple patterning. 22) Current lithography technology has enabled the patterning of high-density sub-15-nm features for DRAM.…”

Section: Background On Film/etching-based Multiplepatterning Scalingmentioning

confidence: 99%

Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?

Ishikawa

Karahashi

Ishijima

et al. 2018

Jpn. J. Appl. Phys.

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In this review, we discuss the progress of emerging dry processes for nanoscale fabrication of high-aspect-ratio features, including emerging design technology for manufacturability. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands of nanoscale deposition and etching technologies for high-aspect-ratio features. The discussion of our atomic-scale understanding of physicochemical reactions involving ion bombardment and neutral transport presents the major challenges shared across the plasma science and technology community. Focus is placed on advances in fabrication technology that control surface reactions on three-dimensional features, as well as state-of-the-art techniques used in semiconductor manufacturing with a brief summary of future challenges.

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“…Semiconductor quantum dots (QDs) have the potential for control of single electron injection via the zero-dimensional (0D) electronic states of QDs, based on the Coulomb blockade phenomenon. [1][2][3] Advanced electronic control technology that takes advantage of such QD features is expected to be the next generation electronic devices such as single electron transistors, [4][5][6][7] single electron memories 8,9) and their super-integration. Furthermore, single photon generation by controlling single electron injection using QDs is also expected to be applied to quantum information technology.…”

Section: Introductionmentioning

confidence: 99%

Resonant tunneling injection of electrons through double stacked GaAs/InAs quantum dots with nanohole electrode

Nakazato,

Miyashita,

Yamaguchi

2023

Jpn. J. Appl. Phys.

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Resonant tunneling diodes containing closely double-stacked InAs quantum dots (QDs) were grown on GaAs substrates by molecular beam epitaxy. After growing a thin GaAs capping layer on the double-stacked InAs QDs, nanoholes were selectively formed just above the larger second QDs by thermal annealing. The Au thin film was deposited directly on top surface of the larger second QDs through the nanoholes. The second QDs contacted with Au film served as conducting dots, which can locally inject electrons into the underlying first QDs. In current versus voltage (I-V) measurements, (dI/dV) peaks were clearly observed in the forward bias voltage region. It was due to the tunneling current through a non-doped GaAs thin layer between double-stacked QDs and n-GaAs conduction band. The (dI/dV) peaks shifted toward the lower forward voltage region with increasing temperature. It was explained by the temperature dependence of the electron energy distribution in the GaAs conduction band.

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Single-Electron MOS Memory with a Defined Quantum Dot Based on Conventional VLSI Technology

Cited by 5 publications

References 5 publications

Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams

Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams

Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?

Resonant tunneling injection of electrons through double stacked GaAs/InAs quantum dots with nanohole electrode

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