Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling

Jacquemet, Mathieu; Domenech, M.; Lucas-Leclin, Gaëlle; Georges, Patrick; Dion, J.; Strassner, M.; Sagnes, I.; Garnache, A.

doi:10.1007/s00340-006-2499-0

Cited by 40 publications

(30 citation statements)

References 23 publications

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“…The further increase of the output power will require a reduction of the VECSEL thermal resistance in order to withstand high-power pumping without roll-over. Standard solutions such as removing the GaAs substrate and soldering the structure onto a high-conductivity substrate or a heatsink could be used (Kuznetsov et al 1999;Hastie et al 2003;Lutgen et al 2003;Jacquemet et al 2007). …”

Section: Resultsmentioning

confidence: 99%

“…The single-frequency operation was obtained by inserting a solid 26 µm-thick FabryPerot etalon inside the cavity, which introduced spectrally selective losses with a 9 nm FSR (Jacquemet et al 2007). The threshold increased to 3.1 kW/cm 2 and the slope efficiency decreased to 7% because of the wavelength mismatch between the QWs gain and the laser emission forced by the etalon.…”

Section: Experimental Setup and Resultsmentioning

confidence: 99%

“…It is in good agreement with the theoretical value (485 K/W) deduced from a simple three-layer analytical model under the same operating conditions (Reichling and Grönbeck (1994)): we assumed a 1D heat flow in the thin active layers, leading to a contribution to the thermal resistance of the VECSEL active chip given by R th = e/(κ a πω 2 p ) with κ a the thermal conductivity of the active layers (QWs + Bragg), e their total thickness and ω P the pump radius (Jacquemet et al 2007); the 350 µm-thick GaAs substrate contributes to R th = κ s πω p −1 following a 3D heat flow model more suitable for thick layers. The maximum output power achievable from our 4 QWs structure was 40 mW at 0.4 W incident pump power, a pump waist radius of 48 µm and a T = 0.7% output coupler.…”

Section: Gain Measurements and Thermal Characterizationmentioning

confidence: 99%

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Design of a low-threshold VECSEL emitting at 852 nm for Cesium atomic clocks

et al. 2008

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This work reports on an optically-pumped vertical external-cavity surfaceemitting laser (VECSEL) emitting around 852 nm for Cesium atomic clocks experiments. We describe in the following our first results on the design and the characterization of a VECSEL's semiconductor structure suitable for these applications. We optimized the parameters of the structure in order to have a low threshold and a high gain structure emitting around 852 nm. With a compact setup, we obtained a 5-mW single frequency emission exhibiting broad and fine tunability around the Cesium D 2 line.

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Section: Resultsmentioning

confidence: 99%

Section: Experimental Setup and Resultsmentioning

confidence: 99%

Section: Gain Measurements and Thermal Characterizationmentioning

confidence: 99%

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Design of a low-threshold VECSEL emitting at 852 nm for Cesium atomic clocks

et al. 2008

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“…Such single-mode operation has been achieved both with intracavity filters [55,56,59,221], such as etalons, birefringent filters, and volume Bragg gratings, or alternatively free running without intracavity filters [106,140]. Single-mode operation has been demonstrated both for the fundamental and intracavity frequency-doubled VECSELs [222]. Further investigation of the singlemode VECSEL regime and understanding of its properties can yield devices with unique characteristics for the above-mentioned applications, such as hertz-level quantum-limited linewidth [119] and shot-noise limited RIN [56], while at the same time with watt-level output powers and potentially tunable over several tens of nanometers wavelength range.…”

Section: Current and Future Research Directionsmentioning

confidence: 91%

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

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Since its invention and demonstration in 1960, several types of laser have been developed, such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used in a wide range of important applications, particularly in optical fiber communication, optical digital recording (CD, DVD, and Blu-ray), laser materials processing, biology and medicine, spectroscopy, imaging, entertainment, and many others. A number of properties enable the application of lasers in these diverse areas, each application requiring a particular combination of these properties. Some of the most important laser properties are laser emission wavelength; output optical power; method of laser excitation, whether by optical pumping or electrical current injection; laser power consumption and efficiency; high-speed modulation or short pulse generation ability; wavelength tunability; output beam quality; device size; and so on. Thus, optical fiber communication [2], a major application that enables modern Internet, commonly requires lasers with emission wavelengths in the 1.55 mm lowloss band of glass fibers and with single-transverse mode output beams for coupling into single-mode optical fibers. Typically, a given laser type excels in some of these properties, while exhibiting shortcomings in others. For example, by using different material compositions and structures, the most widely used semiconductor diode laser [3][4][5][6][7][8][9][10][11][12] can cover a wide range of wavelengths from the ultraviolet (UV) to the mid-IR, can be advantageously driven by diode current injection, and is very compact and efficient. However, the good beam quality, that is, single-transverse mode nearcircular beam operation, can be typically achieved in semiconductor lasers only for output powers below 1 W. Much higher power levels are achievable from semiconductor lasers only with large aspect ratio highly multimoded poor quality optical beams. On the other hand, the solid-state lasers [13,14], including fiber lasers [15], can emit hundreds of watts of output power with excellent beam quality, however, their emission wavelengths are restricted to discrete values of electronic transitions in ions, such as the classic 1064 nm wavelength of the Nd:YAG laser, making them Semiconductor Disk Lasers. Physics and Technology. Edited by Oleg G. Okhotnikov

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“…The early reports on temperature measurements were prepared by Jacquemet et al [212] who measured the top surface temperature of a flip-chip VECSEL using an infrared camera operating at wavelengths of 8-12 µm. However, the spatial resolution was only 60 µm and, therefore, suitable only for relatively large pump spots.…”

Section: Thermal Effectsmentioning

confidence: 99%