Single-Ion Implantation in Diamond with a High Lateral Resolution

Pezzagna, Sébastien; Meijer, Jan

doi:10.1016/b978-0-08-096527-7.00050-7

Cited by 7 publications

(3 citation statements)

References 83 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These results pave the way for a fascinating and feasible implementation of the Kane proposal for a scalable, solid-state, spin-based quantum processor. , As sketched in Figure a, an H-terminated and transparent diamond surface would mute all NV based electron spins below as already discussed above (see Figure ). By adding insulated, nanoscopic top gates selected NV centers might be switched back into NV – upon request.…”

mentioning

confidence: 62%

Protecting a Diamond Quantum Memory by Charge State Control

et al. 2017

Self Cite

View full text Add to dashboard Cite

In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing (QIP). Prominent examples are the nitrogen-vacancy (NV) center in diamond [1][2][3], phosphorous dopants in silicon (Si:P) [4][5][6], rare-earth ions in solids [7][8][9] and VSi-centers in silicon-carbide (SiC) [10][11][12]. The Si:P system has demonstrated that its nuclear spins can yield exceedingly long spin coherence times by eliminating the electron spin of the dopant. For NV centers, however, a proper charge state for storage of nuclear spin qubit coherence has not been identified yet [13]. Here, we identify and characterize the positively-charged NV center as an electron-spin-less and optically inactive state by utilizing the nuclear spin qubit as a probe [13]. We control the electronic charge and spin utilizing nanometer scale gate electrodes. We achieve a lengthening of the nuclear spin coherence times by a factor of 20. Surprisingly, the new charge state allows switching the optical response of single nodes facilitating full individual addressability.Spin defects are excellent quantum systems. Particularly, defects that possess an electron spin together with a set of well-defined nuclear spins make up excellent, small quantum registers [3,14]. They have been used for demonstrations in quantum information processing [3,15], long distance entanglement [16] and sensing [17]. In such systems the electron spin is used for efficient readout (sensing or interaction with photons) whereas the nuclear spins are used as local quantum bits. Owing to their different magnetic and orbital angular momentum, electron and nuclear spins exhibit orders of magnitude different spin relaxation times. As an example, NV electron spins typically relax on a timescale of ms under ambient conditions [18], while nuclear spins do have at least minutes-long spin relaxation times [19]. However, the hyperfine coupling of nuclear spins to the fast relaxing electron spins in most cases significantly deteriorates the nuclear spin coherence, and eventually its relaxation time, down to time scales similar to the electron spin. For NV centers at room-temperature, this limits coherence times to about 10 ms [17,19,20]. For other hybrid spin ensembles e.g. in Si:P, this strict limit was overcome by ionizing the electron spin donors and thereby removing the electron spin. The resulting T 2 times were on the order of minutes for Si:P ensembles [5] and less than a second for single spins [6,21].It is known that the NV center in diamond exists in various charge states. Besides the widely employed negative charge state (NV − ), it is known to have a stable NV 0 and eventually NV + configurations. NV − has a spin triplet ground state with total spin angular momentum S = 1. Calculations as well as spectroscopic data suggest that the NV 0 ground state is S = 1/2 while NV + is believed to be S = 0, i.e. diamagnetic. Several experiments have demonstrated the optical ionization from NV − to the neutral NV 0 charge-state [13,[22][23][24][25][26...

show abstract

mentioning

confidence: 62%

Protecting a Diamond Quantum Memory by Charge State Control

et al. 2017

Self Cite

View full text Add to dashboard Cite

show abstract

“…The SRIM program does not take into account ion channeling effects, ion diffusion, phase transformation of the target material, or the possibility of defect curing (particularly at high temperatures); therefore, it may overestimate the level of damage . Ion channeling is not expected to occur in our case due to the random orientation of the diamond crystallites.…”

Section: Results and Discussionmentioning

confidence: 99%

Influence of 1 keV N₂⁺ Implantation on Nitrogen Bonding, Defect Formation, and Thermal Stability of the Polycrystalline Diamond Near-Surface Region Studied by XPS, TPD, and HREELS

Kuntumalla,

Fischer,

Gani

et al. 2024

J. Phys. Chem. C

View full text Add to dashboard Cite

In this study, the near-surface physicochemical properties of low-energy nitrogen-implanted polycrystalline diamond (PCD) and their evolution with the annealing temperature were investigated. The nitrogen concentration, its chemical state, and defects created in the PCD near-surface upon 1 keV N 2 + implantation at different doses of 6 × 10 13 (D1), 3 × 10 14 (D2), 3 × 10 15 (D3), and 1 × 10 16 (D4) N 2 + /cm 2 at room temperature were investigated up to annealing temperatures of 1000 °C. These studies were carried out using X-ray photoelectron spectroscopy (XPS), high-resolution electron energy loss spectroscopy, and thermal-programmed desorption (TPD). The highest nitrogen retention ratio was measured for D1, followed by the D2 case. It was found that the implanted nitrogen near-surface concentration obtained similar values for the D3 and D4 cases. From the C(1s) and N(1s) XP line shape analysis, it is determined that upon D1 implantation, nitrogen is bonded into interstitial sites in mostly a single-bonding configuration, C−N\C�N, and very low levels of point defects are produced by the implantation process. As the dose increases to D2, nitrogen bonding also occurs to point defects, creating a low concentration of C�N (nitrile-like) bonds. For D3 and D4 cases, the near-surface region is fully amorphized/ graphitized, and the implanted nitrogen is bonded in a multitude of bonding configurations characteristic of nitrogen bonded to a disordered graphitic structure. The TPD measurements show that N 2 and HCN are the main desorption species and their desorption rate depends on implantation dose and surface temperature. Hydrogen was found to be chemically bonded with surface carbon atoms as well as to some of the implanted nitrogen. From the C(1s) XP line shape analysis, it is determined that for D1, only point defects were created upon implantation, which cannot be annealed within the temperature range used in the present study. For the higher doses, the density of defects increases, and a graphitic layer is found to evolve with annealing temperature. It was found that upon annealing, the relative concentration of different nitrogen states formed varies alongside the relaxation of the disordered carbon layer, suggesting the possibility of complex chemical processes involving diffusion, desorption, and interconversion between the implanted species.

show abstract

“…The possibility to develop diamond optoelectronic devices with stable, room-temperature, electrically driven single-photon sources is a key technology with a broad range of application ranging from quantum communication, computing and metrology [2]. The electrical control of the charge state of NV centers in diamond requires the control of the Fermi level in the diamond band-gap, which has been successfully achieved by incorporating the luminescent center in an intrinsic diamond layer sandwiched between graphitic/graphitic electrodes [3] or in p-i-n structures with graphitic ohmic contacts [4][5] [6]. However, for the optimization of these devices and their standardization in the perspective of their large scale production, an accurate and spatially resolved characterization of their electrostatic features is essential.…”

Section: Introductionmentioning

confidence: 99%

Ion Beam Induced Charge analysis of diamond diodes

Lehnert

Meijer

Ronning

et al. 2017

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

Diamond based p-i-n light-emitting diodes, developed to electrically drive single-photon sources in the visible spectral region at room temperature, have the potential to play a key role in quantum based technologies. In order to gain more insight into the charge injection mechanism occurring in these diodes, we carried out an experiment aimed to investigate the electrostatics and the charge carrier transport by the Ion Beam Induced Charge (IBIC) technique, using 1 MeV He microbeam raster scanning of p-i-n structures fabricated in a high purity diamond substrate, using lithographic masking and P and B ion implantation doping.Charge Collection Efficiency (CCE) maps obtained at low ion fluence, show that induced charge pulses arise only from the P-implanted region, whereas no IBIC signals arise from the B-implanted region. This result suggests the formation of a slightly p-type doped substrate, forming a n + -p-p + , rather than the expected p-i-n, structure.However, for high fluence scans of small areas covering the intrinsic gap, CCE maps are more uniform and compatible with a p-i-n structure, suggesting the occurrence of a "priming effect", which saturates acceptor levels resulting in a decrease of the effective doping of the diamond substrate.

show abstract

Single-Ion Implantation in Diamond with a High Lateral Resolution

Cited by 7 publications

References 83 publications

Protecting a Diamond Quantum Memory by Charge State Control

Protecting a Diamond Quantum Memory by Charge State Control

Influence of 1 keV N₂⁺ Implantation on Nitrogen Bonding, Defect Formation, and Thermal Stability of the Polycrystalline Diamond Near-Surface Region Studied by XPS, TPD, and HREELS

Ion Beam Induced Charge analysis of diamond diodes

Contact Info

Product

Resources

About

Single-Ion Implantation in Diamond with a High Lateral Resolution

Cited by 7 publications

References 83 publications

Protecting a Diamond Quantum Memory by Charge State Control

Protecting a Diamond Quantum Memory by Charge State Control

Influence of 1 keV N2+ Implantation on Nitrogen Bonding, Defect Formation, and Thermal Stability of the Polycrystalline Diamond Near-Surface Region Studied by XPS, TPD, and HREELS

Ion Beam Induced Charge analysis of diamond diodes

Contact Info

Product

Resources

About

Influence of 1 keV N₂⁺ Implantation on Nitrogen Bonding, Defect Formation, and Thermal Stability of the Polycrystalline Diamond Near-Surface Region Studied by XPS, TPD, and HREELS