Single-phase CZTSe <i>via</i> isothermal recrystallization in a KI–KCl flux

Bakhadur, A. M.; Uralbekov, Bolat; Atuchin, Victor V.; Mukherjee, Shaibal; Кох, К. А.

doi:10.1039/d1ce01653a

Cited by 8 publications

(4 citation statements)

References 34 publications

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“…XRD analysis generally does not accurately identify the secondary phases and distinguishes similar binary and/or ternary phases in CIGS and related systems. 33,34 The peaks related to OVC are strongly suppressed by the intense peaks of the dominant CIGS phases. 35,36 The tetragonal chalcopyrite crystal lattice (space group D 2d 12) of CuInGaSe 2 contains two tetragonal formula units which give twenty-one optical and three acoustic vibrational modes.…”

Section: Resultsmentioning

confidence: 99%

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications

Desarada,

Chavan,

Chaure

et al. 2023

ECS J. Solid State Sci. Technol.

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CuInGaSe2 (CIGS) thin films were deposited by radio-frequency sputtering using a single quaternary target and the effects of various parameters, such as substrate temperature, sputtering power, and gas flow rate, were studied. The structural, morphological, compositional, and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy, energy-dispersive X-ray, and UV-Vis-NIR spectroscopy. Samples exhibited the chalcopyrite-type tetragonal structure confirmed by XRD analysis. Raman spectroscopy showed the presence of Cu poor OVC phase in all samples.The growth of the sample at a higher substrate temperature resulted in a higher crystalline nature with a suppressed OVC phase and with an energy bandgap of 1.1eV. The deposition of CIGS at 160 W sputtering power favors growth towards (112) Bragg crystal plane, suppressing the (220)/(204) plane of CIGS, shows change in preferred orientation with a lower sputtering power at 80 and 120 W. The sample grown at 60 standard cubic centimeter per minute gas flow rate exhibited compact grain growth with marginally improved crystallinity.The sample grown at 160W, 300°C, and 60SCCM shows better crystalline and morphological properties, and it can be used as an absorber layer for highly efficient CIGS thin-film solar cells.

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Section: Resultsmentioning

confidence: 99%

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications

Desarada,

Chavan,

Chaure

et al. 2023

ECS J. Solid State Sci. Technol.

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“…All films had three vibration peaks at 170, 192, and 243 cm −1 . The vibration peaks at 170 and 192 cm −1 belong to A-mode Raman vibration peaks of CZTSSe phase, and the vibration peak at 243 cm −1 belongs to E vibrational mode Raman peak of CZTSSe phase [ 27 , 28 ]. In addition to the above three vibration peaks, no other vibration peaks were found.…”

Section: Resultsmentioning

confidence: 99%

Insight into the Effect of Selenization Temperature for Highly Efficient Ni-Doped Cu2ZnSn(S,Se)4 Solar Cells

Zeng

Sui

et al. 2022

Nanomaterials

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Cu2Ni0·05Zn0·95Sn(S,Se)4 (CNZTSSe) films were synthesized on Mo-coated glass substrates by the simple sol–gel means combined with the selenization process, and CNZTSSe-based solar cells were successfully prepared. The effects of selenization temperature on the performance and the photoelectric conversion efficiency (PCE) of the solar cells were systematically studied. The results show that the crystallinity of films increases as the selenization temperature raises based on nickel (Ni) doping. When the selenization temperature reached 540 °C, CNZTSSe films with a large grain size and a smooth surface can be obtained. The Se doping level gradually increased, and Se occupied the S position in the lattice as the selenization temperature was increased so that the optical band gap (Eg) of the CNZTSSe film could be adjusted in the range of 1.14 to 1.06 eV. In addition, the Ni doping can inhibit the deep level defect of SnZn and the defect cluster [2CuZn + SnZn]. It reduces the carrier recombination path. Finally, at the optimal selenization temperature of 540 °C, the open circuit voltage (Voc) of the prepared device reached 344 mV and the PCE reached 5.16%.

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“…Complex chalcogenide compounds typically belong to semiconductor materials and have a number of valuable properties regarding their use in optical systems and electronic technologies [3,[5][6][7]12,15]. Presently, Cu-containing sulfides and selenides are considered to be promising compounds for the use in solar energy technologies, and it arouses a general interest in the crystal chemistry and properties of complex Cu chalcogenides, including the search for new materials [5,[21][22][23][24][25][26][27][28]. In particular, chalcogenide compounds with generalized composition ABCX 3 , where A-alkaline-earth metal, B-d-or f-element, C-other delement, X-chalcogenide, can be considered.…”

Section: Introductionmentioning

confidence: 99%

Kinetics and Mechanism of BaLaCuS3 Oxidation

et al. 2023

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The oxidation reactions of BaLaCuS3 in the artificial air atmosphere were studied at different heating rates in the temperature range of 50–1200 °C. The oxidation stages were determined by DSC-TG, XRD and IR–vis methods. The kinetic characteristics of the proceeding reactions were obtained with the use of the Kissinger model in a linearized form. Compound BaLaCuS3 was stable in the air up to 280 °C. Upon further heating up to 1200 °C, this complex sulfide underwent three main oxidation stages. The first stage is the formation of BaSO4 and CuLaS2. The second stage is the oxidation of CuLaS2 to La2O2SO4 and copper oxides. The third stage is the destruction of La2O2SO4. The final result of the high-temperature treatment in the artificial air atmosphere was a mixture of barium sulfate, copper (II) oxide and La2CuO4. The mechanism and stages of BaLaCuS3 oxidation and further interactions of the components were discussed.

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Single-phase CZTSe via isothermal recrystallization in a KI–KCl flux

Abstract: A pure Cu2ZnSnSe4 phase was prepared from elemental Cu, Zn, Sn, and Se with the addition of a KI–KCl mixture.

Cited by 8 publications

References 34 publications

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications

Insight into the Effect of Selenization Temperature for Highly Efficient Ni-Doped Cu2ZnSn(S,Se)4 Solar Cells

Kinetics and Mechanism of BaLaCuS3 Oxidation

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Single-phase CZTSe via isothermal recrystallization in a KI–KCl flux

Abstract: A pure Cu2ZnSnSe4 phase was prepared from elemental Cu, Zn, Sn, and Se with the addition of a KI–KCl mixture.

Cited by 8 publications

References 34 publications

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe2 Thin Films for Photovoltaic Applications

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe2 Thin Films for Photovoltaic Applications

Insight into the Effect of Selenization Temperature for Highly Efficient Ni-Doped Cu2ZnSn(S,Se)4 Solar Cells

Kinetics and Mechanism of BaLaCuS3 Oxidation

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Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications