Single-photon avalanche diodes in 018-μm high-voltage CMOS technology

Huang, Lin-Yun; Wu, Jyh‐Horng; Wang, J. P.; Tsai, Chia-Ming; Huang, Yang‐Tung; Wu, Dai-Rong; Lin, Sheng-Di

doi:10.1364/oe.25.013333

Cited by 32 publications

(8 citation statements)

References 24 publications

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“…Several tests of geiger mode avalanche detection structures were reported in the literature using 0.8 µm [17][18][19][20][21][22][23], 0.7 µm [24], 0.5 µm [25], 0.35 µm [16,[26][27][28][29][30][31][32][33][34], 0.18 µm [2, [35][36][37], 0.15 µm [38], 0.13 µm [39][40][41][42][43][44], 0.09 µm [45,46] CMOS processes.…”

Section: Introductionmentioning

confidence: 99%

Possible layout solutions for the improvement of the dark rate of geiger mode avalanche structures in the GLOBALFOUNDRIES BCDLITE 0.18 μm CMOS technology

D’Ascenzo

Xie

2018

J. Inst.

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Modern concepts of single photon or charged particle detection systems are based on geiger mode avalanche devices developed in CMOS technology. The key-problem encountered in the fabrication of these devices in CMOS is the dark rate level. The dark rate and single photon signal are not distinguishable. This sets also the limits of the application of geiger mode avalanche devices to single photon or charged particle detection systems. We report the design and fabrication of four possible layouts of these devices using the 0.18 μm BCDLite GLOBALFOUNDRIES process. The devices have an area of 50×50 μm2. They are characterized by a fast response time and an approximately 60 ns recovery time. The best topology exhibits an average dark rate as low as 3×103 kHz/mm2.

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Section: Introductionmentioning

confidence: 99%

Possible layout solutions for the improvement of the dark rate of geiger mode avalanche structures in the GLOBALFOUNDRIES BCDLITE 0.18 μm CMOS technology

D’Ascenzo

Xie

2018

J. Inst.

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“…Since the birth in the 1960s, single-photon avalanche diodes (SPADs) advanced with Si-based semiconductor technology [1,2]. Driven by fast-developing CMOS technology, detection of extremely weak light using SPADs has been a growing field in the past two decades [3][4][5][6]. Due to their single-photon sensitivity and excellent timing resolution, SPADs have been used in areas such as fluorescence lifetime imaging microscopy [7][8][9][10], light detection and ranging (LiDAR) [11,12], radiometric temperature measurement [13], and time-gated Raman spectroscopy [14].…”

Section: Introductionmentioning

confidence: 99%

Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes

Hsieh

Tsai

Tsui

et al. 2020

Sensors

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Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (PDP), defines the probability of a successful detection for a single incident photon. To optimize PDP is a cost- and time-consuming task due to the complicated and expensive CMOS process. In this work, we have developed a simulation procedure to predict the PDP without any fitting parameter. With the given process parameters, our method combines the process, the electrical, and the optical simulations in commercially available software and the calculation of breakdown trigger probability. The simulation results have been compared with the experimental data conducted in an 800-nm CMOS technology and obtained a good consistence at the wavelength longer than 600 nm. The possible reasons for the disagreement at the short wavelength have been discussed. Our work provides an effective way to optimize the PDP of a SPAD prior to its fabrication.

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“…Especially, SPADs implemented in a standard complementary metal oxide semiconductor (CMOS) process is the key that enables high-volume production of low-cost single-photon sensors. Although many efforts have been focusing on realizing CMOS-compatible SPADs and single-photon sensors in deep-submicron CMOS technology [4][5][6][7][8][9][10][11][12][13][14][15][16], the majority of them rely on non-standard processes with customized layers that increase the cost and design complexity.…”

Section: Introductionmentioning

confidence: 99%

Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR Application

et al. 2019

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We present a single-photon sensor based on the single-photon avalanche diode (SPAD) that is suitable for low-cost and low-voltage light detection and ranging (LiDAR) applications. It is implemented in a zero-change standard 0.18-μm complementary metal oxide semiconductor process at the minimum cost by excluding any additional processing step for customized doping profiles. The SPAD is based on circular shaped P+/N-well junction of 8-μm diameter, and it achieves low breakdown voltage below 10 V so that the operation voltage of the single-photon sensor can be minimized. The quenching and reset circuit is integrated monolithically to capture photon-generated output pulses for measurement. A complete characterization of our single-photon sensor is provided.

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Single-photon avalanche diodes in 018-μm high-voltage CMOS technology

Cited by 32 publications

References 24 publications

Possible layout solutions for the improvement of the dark rate of geiger mode avalanche structures in the GLOBALFOUNDRIES BCDLITE 0.18 μm CMOS technology

Possible layout solutions for the improvement of the dark rate of geiger mode avalanche structures in the GLOBALFOUNDRIES BCDLITE 0.18 μm CMOS technology

Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes

Monolithically-Integrated Single-Photon Avalanche Diode in a Zero-Change Standard CMOS Process for Low-Cost and Low-Voltage LiDAR Application

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