Single quantum dot nanowire photodetectors

Kouwen, Van Mp; Weert, van Mhm Maarten; Reimer, ME; Akopian, N.; Perinetti, U.; Algra, Rienk E.; Bakkers, Epam Erik; Kouwenhoven, L. P.; Zwiller, Val

doi:10.1063/1.3484962

Cited by 47 publications

(38 citation statements)

References 26 publications

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“…[15][16][17][18] Nanowires, furthermore, represent a model system for atom probe analysis, [19][20][21][22][23][24] as they closely approximate the shape of a field-emission tip. Nevertheless, and despite the interest of nanowire-based QDs for quantum information [25][26][27][28][29] and for their integration in nanoscale optoelectronic devices, [30][31][32][33] no studies of nanowire QDs by APT have been reported yet.…”

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confidence: 99%

“…[15][16][17][18] Nanowires, furthermore, represent a model system for atom probe analysis, 19-24 as they closely approximate the shape of a field-emission tip. Nevertheless, and despite the interest of nanowire-based QDs for quantum information [25][26][27][28][29] and for their integration in nanoscale optoelectronic devices, [30][31][32][33] no studies of nanowire QDs by APT have been reported yet.Core-shell GaAs/AlGaAs nanowires grown by molecular beam epitaxy (MBE) have been shown to exhibit narrow luminescence and single photon emission, ascribed to QDs forming occasionally at the external corners of the AlGaAs shells. 27 Isolated emissions centered around 670 nm ($1.85 eV) could be found by cathodoluminescence (CL) spectroscopy, with a typical mean frequency along the axis of the order of one spot per micron.…”

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confidence: 99%

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Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Mancini

Fontana

Conesa‐Boj

et al. 2014

Applied Physics Letters

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GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining structures susceptible of producing narrow photoluminescence (PL) and single photons. The nanoscale chemical mapping of these structures is analyzed in 3D by atom probe tomography (APT). The study allows us to confirm that Al atoms tend to segregate within the AlGaAs shells towards the vertices of the hexagons defining the nanowire cross section. We also find strong alloy fluctuations remaining AlGaAs shell, leading occasionally to the formation of quantum dots (QDs). The PL emission energies predicted in the framework of a 3D effective mass model for a QD analyzed by APT and the PL spectra measured on other nanowires from the same growth batch are consistent within the experimental uncertainties. V C 2014 AIP Publishing LLC.[http://dx.doi.org/10.1063/1.4904952] Epitaxial semiconductor quantum dots (QDs) have been extensively studied over the last three decades because of their peculiar optical properties such as narrow luminescence and single photon emission. The structure and chemical composition of QDs has traditionally been assessed by scanning tunneling microscopy (STM) or transmission electron microscopy (TEM) related techniques. 1 In the last decade, laser-assisted atom probe tomography (LA-APT) 2 has emerged as a tool for the determination of the morphology and of the chemical composition of nanoscale semiconductor heterostructures with sub-nanometer resolution in 3D. 3,4 In the past few years, several APT-based studies addressed a limited number of QD structures. 4-10 Quantum dots can be inserted in semiconductor nanowires either deterministically, with specific shape and composition, 11-14 or as self-assembled structures. [15][16][17][18] Nanowires, furthermore, represent a model system for atom probe analysis, 19-24 as they closely approximate the shape of a field-emission tip. Nevertheless, and despite the interest of nanowire-based QDs for quantum information [25][26][27][28][29] and for their integration in nanoscale optoelectronic devices, [30][31][32][33] no studies of nanowire QDs by APT have been reported yet.Core-shell GaAs/AlGaAs nanowires grown by molecular beam epitaxy (MBE) have been shown to exhibit narrow luminescence and single photon emission, ascribed to QDs forming occasionally at the external corners of the AlGaAs shells. 27 Isolated emissions centered around 670 nm ($1.85 eV) could be found by cathodoluminescence (CL) spectroscopy, with a typical mean frequency along the axis of the order of one spot per micron. 27 Previous studies of these structures performed by highresolution scanning transmission electron microscopy (HR-STEM), electron energy loss spectroscopy (EELS), and energy-dispersive X-ray spectroscopy (EDX) indicated that QDs may form at the outer corner of the hexagon in the AlGaAs shell, at the termination of an Al-segregation region. 27,34 However, it was not possible to fully characterize the shape of the dots nor ascertain whether other mechanisms of QD formation may occ...

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confidence: 99%

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confidence: 99%

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Mancini

Fontana

Conesa‐Boj

et al. 2014

Applied Physics Letters

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“…The effects of strong coupling are probably most easily observed in zinc-blende/wurzite crystal phase QDs 40 which feature perfectly atomically flat interfaces, thus providing a good opportunity to spectrally overlap different QDs, either in the same nanowire, or in different nanowires. Moreover, nanowire quantum dots can be embedded into a low refractive index material like PDMS, 41 SiO 2 , or Si 3 N 4 for increasing the coupling and getting rid of the substrate-based photoluminescence. Finally, it has already been shown that a nanowire can be individually contacted, 42 thus in principle allowing one to tune the mutual QD-QD detuning by using the quantum confined Stark effect.…”

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confidence: 99%

Collective spontaneous emission in coupled quantum dots: Physical mechanism of quantum nanoantenna

et al. 2012

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“…Second, photon polarization is altered by the dielectric anisotropy of the one-dimensional nanowire, which acts as a polarizer. [7][8][9][10][11][12][13] As a result, photons emitted from quantum dots in nanowires with polarization aligned along the nanowire axis are more likely to be detected compared to photons polarized perpendicular to the nanowire, 14,15 thereby destroying the original polarization information.…”

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Optical polarization properties of a nanowire quantum dot probed along perpendicular orientations

Bulgarini

Reimer

Zwiller

2012

Applied Physics Letters

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We report on the optical properties of single quantum dots in nanowires probed along orthogonal directions. We address the same quantum dot from either the nanowire side or along the nanowire axis via reflection on a micro-prism. The collected photoluminescence intensity from nanowires lying on a substrate is improved 3-fold using the prism as compared to usual collection from the top. More importantly, we circumvent the polarizing effect of the nanowire and access the intrinsic polarization properties of the quantum emitter. Our technique is compatible with the design of complex nanowire devices for the development of quantum opto-electronics. The polarization state of photons is of fundamental importance in the field of quantum information and for the development of future quantum opto-electronic devices. For example, polarization-entangled photons are employed in quantum cryptography for secure communication 1 or necessary in the future implementations of a quantum repeater. 2 In this prospect, quantum dots grown in nanowires are ideal candidates for entangled photon generation due to the high symmetry provided by the nanowire, from which the finestructure splitting is predicted to vanish. 3 As an additional advantage, nanowires provide a one-dimensional channel for charge transport that can be used to realize an efficient interface between the electron (or hole) spin and the polarization state of a single photon. For instance, electrons 4 or holes 5 confined in electrically defined quantum dots may be transferred to an optically active quantum dot within the same nanowire for the emission of a single photon.For implementation of complex, electrically contacted devices, 4-6 nanowires are typically transferred, lying on a substrate and emitted photons are collected from the top. 6 There are two main problems in using this geometry. First, photon collection is inefficient because most of the emission is directed towards the higher dielectric material, i.e., the substrate. Second, photon polarization is altered by the dielectric anisotropy of the one-dimensional nanowire, which acts as a polarizer. 7-13 As a result, photons emitted from quantum dots in nanowires with polarization aligned along the nanowire axis are more likely to be detected compared to photons polarized perpendicular to the nanowire, 14,15 thereby destroying the original polarization information.Here, we show an alternative scheme for excitation and light collection from nanowires lying on a substrate, which accesses the intrinsic polarization properties of the quantum emitter while simultaneously increasing the light collection efficiency. This alternative scheme is based on the excitation, and detection, via reflection on a 45 -cut micro-prism. In this letter, photoluminescence (PL) experiments of the same quantum dot from both the nanowire side and along the nanowire symmetry axis are shown and compared. Calculations of the quantum dot angular radiation pattern for a nanowire lying on a SiO 2 =Si substrate are presented that explain the 3-fo...

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Single quantum dot nanowire photodetectors

Abstract: Kouwen, Van

Cited by 47 publications

References 26 publications

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Collective spontaneous emission in coupled quantum dots: Physical mechanism of quantum nanoantenna

Optical polarization properties of a nanowire quantum dot probed along perpendicular orientations

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