Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories

Umeda, T.; Okonogi, K.; Ohyu, K.; Tsukada, Shinya; Hamada, Keisuke; Fujieda, Shinji; Mochizuki, Yumi

doi:10.1063/1.2213966

Cited by 29 publications

(15 citation statements)

References 10 publications

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“…On average, the effect of RTN seems equivalent to a V th shift of about 0.02V to 0.06V, which tallies with measured data [4]. 6 Fig . 16 quantifies the bit-error impact of RTN on SRAM arrays.…”

Section: B Statistical Inferences About Rtn-induced Sram Failuressupporting

confidence: 85%

“…16 quantifies the bit-error impact of RTN on SRAM arrays. Using a normal distribution for V th and the trap profiling model of [2], we have computed the probability of write failure as V dd is increased from 0.7 V to 1.0 V. As 6 Please note that N in Fig. 15 is the total number of device traps, not the number of active traps.…”

Section: B Statistical Inferences About Rtn-induced Sram Failuresmentioning

confidence: 99%

“…In addition to the unfavorable impact on SRAMs, RTN is also considered responsible for variable retention times in DRAMs [6]. Fig.…”

mentioning

confidence: 99%

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Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs

Aadithya

Demir

Venugopalan

et al. 2013

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Abstract-With aggressive technology scaling and heightened variability, circuits such as SRAMs and DRAMs have become vulnerable to random telegraph noise (RTN). The bias dependence (i.e., non-stationarity), bi-directional coupling, and high inter-device variability of RTN present significant challenges to understanding its circuit-level effects. In this paper, we present two computer-aided design (CAD) tools, SAMURAI and MUS-TARD, for accurately estimating the impact of non-stationary RTN on SRAMs and DRAMs. While traditional (stationary) analysis is often overly pessimistic (e.g., it overestimates RTNinduced SRAM failure rates), the predictions made by SAMURAI and MUSTARD are more reliable by virtue of non-stationary analysis.

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Section: B Statistical Inferences About Rtn-induced Sram Failuressupporting

confidence: 85%

Section: B Statistical Inferences About Rtn-induced Sram Failuresmentioning

confidence: 99%

See 1 more Smart Citation

Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs

Aadithya

Demir

Venugopalan

et al. 2013

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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“…RTN in Dynamic Random Access Memories (DRAM) has already been reported in the late eighties (35,36), giving rise to the so-called variable retention time phenomenon. In this case, the trapping is associated with p-n junction leakage current and with traps in the silicon depletion region (37,38). Recent results have demonstrated that the RTN issue will become even more pronounced for future Resistive RAM (ReRAM) (39)(40)(41)(42) or Phase-Change Memories (43)(44)(45).…”

Section: Rtn and Memory Variabilitymentioning

confidence: 99%

(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

Simoen¹,

Kaczer²,

Toledano-Luque³

et al. 2011

ECS Trans.

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An overview is given on Random Telegraph Noise (RTN) in MOS-based devices. First, the basic properties and physics are briefly outlined, emphasizing the stochastic nature of its main parameters: the capture and emission time constant, while its amplitude is fixed and specific for each trap. Different techniques exist to characterize RTN in MOS devices, either by time or frequency domain measurements. A distinction can also be made between dynamic equilibrium methods like noise spectroscopy or transient measurements, based on a Deep-Level Transient Spectroscopy approach. While single-device based RTN measurements are still of high value, for modern circuit applications, techniques are being developed allowing a fast assessment of RTN in a large number of transistors. The scaling of CMOS technologies to the 32 nm and below raises the issue of variability induced either by random dopant fluctuations or in general, by random charge fluctuations, both spatially and in time. As will be seen, the presence of traps responsible for RTN brings about an additional source of variability which may become dominant in future memories. Finally, it will be shown that RTN is not only a fundamental component of 1/f noise but the same oxide traps are also largely responsible for the Bias Temperature Instability (BTI) in scaled MOSFETs. This leads to a selfconsistent model for BTI and a stochastic approach towards the reliability prediction of deep submicron CMOS technologies.

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“…i) V n O m complexes cause leakage currents in p-n junctions [24][25][26]. Also besides VO, the V 2 O and V 3 O defects have been found to be effective recombination centers contributing in the reduction of the minority charge carriers lifetime induced by irradiation [3,27].…”

Section: Introductionmentioning

confidence: 99%

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Londos

Sgourou

Hall

et al. 2014

J Mater Sci: Mater Electron

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Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail.

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Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories

Cited by 29 publications

References 10 publications

Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs

Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs

(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

Vacancy-oxygen defects in silicon: the impact of isovalent doping

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