Single-step preparation and characterization of Cu2ZnSn(SxSe1−x)4 thin films deposited by pulsed laser deposition method

Controlled substitution of S by Se in reactively sputtered CZTSSe thin films for solar cells

“…These two peaks represent the CZTSSe phase. These results are in good agreement with results reported earlier [35,42,43]. It is observed that the position of (112) peak slightly shifts towards lower diffraction angle with increase in the selenization time ( Fig.…”

Synthesis of Cu2FeSnSe4 thin film by selenization of RF magnetron sputtered precursor

“…The two strong lines of 185 and 238 cm À 1 in the Raman spectra are shown in Fig. 3, which are assigned to species A 1 according to the totally symmetric vibrations for chalcopyrite [9][10][11][12][13]. In addition, there is no impurity phase exist in Raman scattering which is consistent with the result of XRD.…”

Kësterite thin films for photovoltaics : a review

“…-it is a compound whose intrinsic point defects lead to p-type semiconductor behavior; -it has a direct bandgap and an absorption coefficient >10 4 cm −1 , which is suitable for thin film photovoltaics applications [15][16][17]; -its band gap has been predicted [18] to be 1.0 eV for Cu 2 ZnSnSe 4 and 1.5 eV for Cu 2 ZnSnS 4 and evidences of the bandgap tunability have been found via the variations of V OC [19], as well as direct measurements of the variation of the bandgap between 1.0 eV for Cu 2 ZnSnSe 4 and 1.5 eV for Cu 2 ZnSnS 4 [20][21][22][23][24]. The band gap of CZTS can also be tuned by incorporation of Ge, Ge-containing materials having smaller bandgap than their Ge-free counterparts [25].…”