2021
DOI: 10.1021/acsnano.1c00481
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Single Trap States in Single CdSe Nanoplatelets

Abstract: Trap states can strongly affect semiconductor nanocrystals, by quenching, delaying, and spectrally shifting the photoluminescence (PL). Trap states have proven elusive and difficult to study in detail at the ensemble level, let alone in the single-trap regime. CdSe nanoplatelets (NPLs) exhibit significant fractions of long-lived “delayed emission” and near-infrared “trap emission”. We use these two spectroscopic handles to study trap states at the ensemble and the single-particle level. We find that reversible… Show more

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Cited by 41 publications
(45 citation statements)
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“…While it is often assumed that τ X – ,r is half the radiative lifetime of neutral excitons (τ X,r ), the latter has never been accurately measured or derived. As shown in Figure S12, the PL decay of neutral NPLs is multiexponential, with contributions from carrier trapping, exciton radiative recombination, carrier detrapping, and recombination of detrapped carriers, , rendering the extraction of pure exciton radiative recombination almost impossible. For this reason, we cannot quantify τ X – ,r and τ X – ,A for our 4 ML and core/shell NPLs.…”
mentioning
confidence: 99%
“…While it is often assumed that τ X – ,r is half the radiative lifetime of neutral excitons (τ X,r ), the latter has never been accurately measured or derived. As shown in Figure S12, the PL decay of neutral NPLs is multiexponential, with contributions from carrier trapping, exciton radiative recombination, carrier detrapping, and recombination of detrapped carriers, , rendering the extraction of pure exciton radiative recombination almost impossible. For this reason, we cannot quantify τ X – ,r and τ X – ,A for our 4 ML and core/shell NPLs.…”
mentioning
confidence: 99%
“…The low-energy band exhibits a broad and weak appearance and is nearly vanished at elevated temperatures. The trapping centers are presumably related to surface sites that can capture hole carriers at metal vacancy sites produced by Se-rich surfaces . This broad emission band retains a constant energy shift by ∼0.57 eV from the exciton region, proposing a relation to deep states.…”
Section: Results and Discussionmentioning
confidence: 93%
“…The trapping centers are presumably related to surface sites that can capture hole carriers at metal vacancy sites produced by Se-rich surfaces. 34 This broad emission band retains a constant energy shift by ∼0.57 eV from the exciton region, proposing a relation to deep states. Further discussion about the lowest energy band is beyond the scope of this paper.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…The correlation of slower blinking dynamics with SD indicates that blinking on this time scale (≥3 s) is due to switching between different emissive states, particularly excitons and trions (mechanism 2, Figure 1). This result is consistent with previous work that concluded that switching between excitons and trions occurs slower than 100 ms. 51 Given that the trion states persist for seconds, the surfacetrapped carriers that have escaped from the NPL to form the trion must require unlikely detrapping events to return to a neutral exciton or biexciton before returning to the ground state. This conclusion is consistent with the observation that low-temperature emission spectra of NPLs are dominated by trion emission.…”
Section: ■ Results and Discussionmentioning
confidence: 99%