SiO2 etching in inductively coupled C2F6 plasmas: surface chemistry and two-dimensional simulations

Glass Difractive Optical Elements (DOEs) with complex modulation DLC thin film coated

“…In fact, it was showed in the graphic (Figure 3) that the higher the RF power is, higher the etch rate will be. Those results can be confirmed when compared with the results showed in many other articles [12][13][14][15] . The values for maximum roughness, RMS roughness and RA roughness were between 9.9-40 nm, 0.7-5.4 nm and 1.7-15.8 nm, respectively.…”

Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide, with comparisons to etch rate and diagnostic data

“…2,3,12,13 Of these plasma models, only a few addressed etching of silicon oxide, 2,12 as do a few feature-scale 14,15 or phenomenological 16 models that focus on the surface reactions but do not address the details of the chemistry occurring in the plasmas. A smaller, preliminary version of the C 2 F 6 mechanism described in this work has been presented, 17 and was used by Economou and co-workers 18 with a different surface mechanism for two-dimensional simulations of C 2 F 6 plasma etching of oxide.…”

Simulations of Si and SiO2Etching in SF6+O2Plasma

“…(6), and similar equations below, do not correspond to an elementary reaction step [9][10][11][12], the fitting procedure using this expression described well the experimentally observed dependence of Si etching rate on O 2 content in the feed. It is due to the presence of the SiO x F y layer during Si and SiO 2 etching in SF 6 +O 2 plasma [5,13]. The steady-state concentration of SiF 4 molecules is equal to…”