SiO2/InP interfaces with reduced interface state density

Abstract

By employing a new InP surface preparation procedure based upon KOH/methanol, the interface state density of plasma-enhanced chemically vapor deposited Si0 2 /lnP structures has been significantly reduced. Capacitance-voltage characteristics of these structures exhibit unusual nonequilibrium behavior which appears to be assoicated with the formation of a p-type inversion layer and with the presence of interface traps with very slow response times. This surface preparation procedure yields an InP native oxide which has no detectable In 2 0) and is contaminated with K.

A study of parallel-field magnetoresistance of accumulation layers at anodic oxide films on n-(Hg, Cd)Te and the diamagnetic Shubnikov-de Haas effect

“…The cut-on energy for the persistent photoconductivity is close to the measured band gap energy of the anodic oxide (Wager and Rhiger 1985) and suggests photo-excitation in the oxide itself is responsible for the Parallel-field magnetoresistance process. It is thought that the photo-excited electrons are captured by the ionised deep traps in the oxide, reducing the positive charge at the interface.…”

“…as a hysteresis on the C-V profile of the surface space charge layers in a Hg,1.7Cd,13Te M I S device before and after exposure to light, but in this case the cut-on energy was 2.2 eV. This was thought to be due to photo-excitation of electrons from the valence band of the semiconductor to the conduction band of the oxide, consistent with energy band discontinuities for an anodic oxide on Hgil Xd,, ,Te (Wager and Rhiger 1985). An attempt was made to observe this photoconduction mechanism in the samples described in this work: however.…”

Electron beam induced current and scanning tunnelling spectroscopy correlative study of and CdTe crystals

“…Measurements performed with different tips, on different samples and under different tunnelling conditions showed the reproducibility of our results, which lead us to conclude that the curves were representative of the material although they were recorded in HV. It should also be mentioned that I -V characteristics showing broad band gaps, which would be related to native oxides [23], were never observed in our investigations. These observations agree with previous reports on the extreme resistance of Cd x Hg 1−x Te to oxidation [24].…”

An Ellipsometric Measurement of Optical Properties for InP Surfaces

“…The pretreatments of the InP samples are summarized in Table I. Group 1 samples were exposed to a 5 min boiling degrease in tetrachloroethylene, then rinsed in the mixture of acetone and methanol for about 10 min, followed by another 10 rain rinsing in acetone, and blown dry by compressed N~ gas (16). For convenience, the group 1 cleaning procedure is called "degreasing."…”