We have observed enrichments of N15 as large as 21±1% in the mixed nitrogenous products (NO, N2O, NO2) of the reaction of N2 and O2 driven by a pulsed glow discharge at 77 °K. A typical energy expenditure per atom separated was 0.22 MeV. Enrichments increased but yields decreased as the electrical energy deposited per reactant molecule was reduced. Under similar conditions enrichment of 15% was observed for N15 from the reaction N2+3D2→2ND3.

Electron-spin-resonance spectroscopy has been used to detect the presence of NO2 in thin amorphous films of SiO2 grown by the plasma enhanced chemical vapor deposition technique. Temperature dependent spectra were observed over the range 4.2–165 K. Based on the experimental spectra and theoretical spectral simulations we found that in the temperature range of 12–87 K NO2 is undergoing axial-motional averaging about the axis in the molecular plane parallel to the O–O direction.

By employing a new InP surface preparation procedure based upon KOH/methanol, the interface state density of plasma-enhanced chemically vapor deposited Si0 2 /lnP structures has been significantly reduced. Capacitance-voltage characteristics of these structures exhibit unusual nonequilibrium behavior which appears to be assoicated with the formation of a p-type inversion layer and with the presence of interface traps with very slow response times. This surface preparation procedure yields an InP native oxide which has no detectable In 2 0) and is contaminated with K.

Efficient tunnel injection of holes into n-type semiconductors has been achieved with evaporated metal-insulator structures on single-crystal GaAs and CdS. Nearly ideal tunneling of holes is observed, with abrupt turn-on of electroluminescence under dc applied voltage comparable to the semiconductor band gap, and internal quantum efficiency on the order of unity.