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Monte Carlo calculations are used to study theoretically hot-electron transport through a thin insulating film subjected to a high uniform electric field F. A constant energy-independent mean free path λ leads to a stable steady-state energy distribution for the electrons, characterized by an average steady-state energy Eav,ss. Eav,ss depends on λ, F, and εph, the optical phonon energy associated with scattering of the hot electrons by the lattice. An energy-dependent mean free path λ (E), which increases with increasing electron energy, can lead to energetic runaway of either a relatively small number of electrons in the distribution (quasistability or a bimodal distribution) or the entire distribution (instability). A graphical method has been developed to gain insight into this problem. The method rests on an analysis of the intersections of two curves plotted in the E-λ plane, one curve being the plot of Eav,ss versus λ, where λ is the mean-free-path parameter taken to be constant (energy independent) for each calculation of Eav,ss, the other curve being the plot of the actual functional dependence of λ on E, λ (E). The method is illustrated by several prototypical examples.

Efficient tunnel injection of holes into n-type semiconductors has been achieved with evaporated metal-insulator structures on single-crystal GaAs and CdS. Nearly ideal tunneling of holes is observed, with abrupt turn-on of electroluminescence under dc applied voltage comparable to the semiconductor band gap, and internal quantum efficiency on the order of unity.