Efficient low-voltage electroluminescent devices by tunnel injection of holes

Clark, M. D.; Baidyaroy, S.; Ryan, F. J.; Ballantyne, J. M.

doi:10.1063/1.88557

Cited by 8 publications

(2 citation statements)

References 9 publications

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“…In particular, when the voltage across the oxide is large enough to provide the band diagram in figure 9B, such a process would take place, with the subsequent radiative recombination of holes and conduction band electrons. Several later works confirmed these results [23,24,25,26,27].…”

Section: Mis Structures)mentioning

confidence: 62%

A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection

Zimmler

Bao²,

Shalish³

et al. 2007

Nanotechnology

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We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device is that by reversing the polarity of the applied voltage the luminescence can be selectively obtained from either the nanowire or the substrate. For one polarity of the applied voltage, ultraviolet (and visible) light is generated in the GaN nanowire, while for the opposite polarity infrared light is emitted from the Si substrate. We propose a model, which explains the key features of the data, based on electron tunnelling from the valence band of one semiconductor into the conduction band of the other semiconductor. For example, for one polarity of the applied voltage, given a sufficient potential energy difference between the two semiconductors, electrons can tunnel from the valence band of GaN into the Si conduction band. This process results in the creation of holes in GaN, which can recombine with conduction band electrons generating GaN band-to-band luminescence. A similar process applies under the opposite polarity for Si light emission. This device structure affords an additional experimental handle to the study of electroluminescence in single nanowires and, furthermore, could be used as a novel approach to two-colour light-emitting devices.

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Section: Mis Structures)mentioning

confidence: 62%

A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection

Zimmler

Bao²,

Shalish³

et al. 2007

Nanotechnology

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“…Moreover, EL has been observed for bulk CdS monocrystals incorporated in various structures. 6,7 To obtain tunability of the emission energy, we exploit the idea of voltage-controlled population of different types of trap states created in the interface region between the individual nanocrystals and selectively activated for radiative recombination via the transport of the injected carriers across the CdS nanocrystals. The size of the CdS nanocrystals in the structures investigated is extremely small with diameters between 1 and 2 nm.…”

Section: Introductionmentioning

confidence: 99%

Electroluminescence in thin solid films of closely packed CdS nanocrystals

Artemyev

Sperling

Woggon

1997

Journal of Applied Physics

130

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Millisecond kinetics of photo-darkening/bleaching in xGe45Se55-(1−x)As45Se55 chalcogenide amorphous films J. Appl. Phys. 112, 053105 (2012) Analysis of sub-stoichiometric hydrogenated silicon oxide films for surface passivation of crystalline silicon solar cells J. Appl. Phys. 112, 054905 (2012) Phase evolution and room-temperature photoluminescence in amorphous SiC alloy J. Appl. Phys. 111, 103526 (2012) Resistive switching properties of amorphous Pr0.7Ca0.3MnO3 films grown on indium tin oxide/glass substrate using pulsed laser deposition method Thin solid films of closely packed CdS nanocrystals with sizes between 1.5 and 1.8 nm have been prepared and sandwiched between indium-tin-oxide ͑ITO͒ and silver contacts. At room temperature, these CdS nanocrystals start to emit light visible to the unaided eye at a bias above 15 V. The spectral characteristics are voltage controlled and tunable between 1.8 eV and 2.8 eV with increasing bias from 20 to 40 V. The current-voltage dependence indicates hopping conductivity of the carriers injected. At high voltage the electroluminescence and photoluminescence spectra are similar showing a strong red shift of the luminescence maximum with respect to the absorption peak at 3.75 eV which we explain by an effective radiative recombination through deep traps in the interface region. Consequently, the tunability of electroluminescence is attributed to excitation of different deep traps by electron transport across neighbouring CdS nanocrystals. © 1997 American Institute of Physics. ͓S0021-8979͑97͒06410-4͔

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Surface states in GaAs tunnel MIS structures

Hirose

Yokoyama

Osaka

1977

Phys. Stat. Sol. (a)

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Thin Al2O3 films are grown on GaAs by low temperature reaction between O2 and Al molecular beams. A high quality of the films is confirmed from the analysis of tunneling current and capacitance—voltage (C—U) characteristics of Si/Al2O3(≈100 Å)/Al structures. High frequency C—U characteristics of p‐GaAs(100)/Al2O3(≈100 Å)/Al structures are in agreement with theoretical predictions. V‐shape surface state density distributions and midgap state density of 2 × 1012/cm2eV at the GaAs/Al2O3 interface are obtained from the frequency dispersion of the C−U characteristics. A very high density of surface states ( > 1013/cm2eV) is found at 0.5 eV below the conduction band edge.

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Efficient low-voltage electroluminescent devices by tunnel injection of holes

Cited by 8 publications

References 9 publications

A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection

A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection

Electroluminescence in thin solid films of closely packed CdS nanocrystals

Surface states in GaAs tunnel MIS structures

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