SiOF and SiO2 deposition in a HDP reactor: tool characterization and film analysis

Boer, D.J. den; Fukuda, Hideki; Helmig, J; Hilst, J.B.C. van der; Janssen, G. C. A. M.; Kalkman, A. J.; Radelaar, S.

doi:10.1016/s0026-2714(97)00165-0

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Extending HDP for STI fill to 45nm with IPM

Wang¹,

Bloking²,

Wang³

et al. 2007

2007 International Symposium on Semiconductor Manufacturing

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A novel gap fill approach, Integrated Profile Modulation (IPM), with repeating deposition and etch cycles is developed to extend HDP for complete gap fill to 45nm node and beyond, with established HDP CVD film properties and integration. In this paper, the key aspects of the IPM process, deposition, etch, in-film fluorine and aluminum control are discussed to provide better understanding on gap fill optimization and manufacturing capability.

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