Site-competition epitaxy for superior silicon carbide electronics

Larkin, David J.; Neudeck, Philip G.; Powell, J. A.; Matus, L. G.

doi:10.1063/1.112947

Cited by 305 publications

(192 citation statements)

References 3 publications

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“…Even taking into account that the growth rate could influence the incorporation, the result is in line with the site competition theory 9 . For the incorporation of Al, higher doping levels are observed upstream where the effective C/Si ratio is expected to be higher than downstream where the opposite conditions prevail.…”

Section: B P-type Doping Using Tmalsupporting

confidence: 62%

“…The substitutional incorporation of Al and N in the SiC lattice is controlled by the site-competition theory where Al is thought to replace Si and N is thought to replace C in the SiC lattice. 9 This makes the C/Si ratio in the CVD gas mixture the key parameter for controlling the amount of incorporated dopants. Doping incorporation in a chlorinated chemistry has been studied in detail and it was found that n-type doping by N2 and tertbutylphosphine (TBP: C4H9 PH2) for doping with phosphorus was easily done and not affected by the presence of chlorine, 10 12 where Al doping in the 10 20 cm -3 range was measured by SIMS.…”

Section: Introductionmentioning

confidence: 99%

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Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry

Stenberg

Janzén

Pedersen

2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Fluorinated chemistry in chemical vapor deposition (CVD) of silicon carbide (SiC) with SiF4 as Si precursor has been shown to fully eliminate the formation of silicon clusters in the gas phase, making SiF4 an interesting Si precursor. However, before a fluorinated CVD chemistry can be adopted, the effect of fluorine on the dopant incorporation must be understood since dopant incorporation is of paramount importance in semiconductor manufacturing. Here, the authors present dopant incorporation studies for n-type doping with N using N2 and p-type doping with Al using TMAl in fluorinated CVD of homoepitaxial SiC. The precursors used were SiF4 as Si precursor and the source of F together with CH4 as C precursor. The authors find that it is possible to control the doping in SiC epitaxial layers when using a fluorinated CVD chemistry for both n- and p-type materials using the C/Si ratio as in standard SiC CVD. However, large area doping uniformity seems to be a challenge for a fluorinated CVD chemistry, most likely due to the very strong Si–F and Al–F bonds.

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Section: B P-type Doping Using Tmalsupporting

confidence: 62%

Section: Introductionmentioning

confidence: 99%

Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry

Stenberg

Janzén

Pedersen

2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…This fact gives the argument to suggest that the absence of the N k1 substituting C site is caused by technology preparation of the np-SiC rather than by compensation eect. Indeed, in accordance with the sitecompetition principle proposed in [8], the C-excess in 6H…”

Section: Methodsmentioning

confidence: 88%

Pulsed EPR and ENDOR Study of SiC Nanopowders

Савченко

2014

Acta Phys. Pol. A

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In this work eld-sweep electron spin echo and pulsed electron nuclear double resonance study of the silicon carbide (SiC) nanoparticles (np-SiC) of dierent sizes is presented. Nitrogen (N) triplet lines due to the isolated N donor state was observed in np-SiC with grain size d > 100 nm. With a decrease of the particle size up to 50 nm the N triplet lines transforms into one single exchange line due to the delocalization of the donor wave function caused by the size connement eect. Along with N donors the carbon vacancy (VC) located in cubic phase was observed in np-SiC with d < 100 nm. The further decrease of the grain size to d < 50 nm leads to the appearance of the VC located in hexagonal crystalline phase and carbon dangling bonds located in the carbon excess phase of np-SiC. The fact that only N donor center at k2 quasi-cubic position substituting Si site was observed in the eld-sweep electron spin echo and pulsed electron nuclear double resonance spectra of np-SiC was explained by high compensation degree of the samples and the presence of carbon excess in np-SiC. The appearance of the proton electron nuclear double resonance signal in no-SiC with d < 100 nm indicates that the hydrogen retention in np-SiC increases with decreasing of grain size.

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“…8 TMA is a common p type doping source for single-crystal SiC films. 12,13 Cross-section high resolution transmission electron microscopy ͑HRTEM͒ ͑FEI Tecnai F30͒ and capacitancevoltage ͑C-V͒ techniques were employed to characterize the deposited SiC films. To enable C-V measurements, the SiC surface was cleaned and aluminum was thermally evaporated and patterned into 0.001 cm 2 electrodes surrounded by a much larger area electrode acting as a low impedance second contact.…”

mentioning

confidence: 99%