Site-controlled single quantum wire integrated into a photonic-crystal membrane microcavity

Abstract

Integration of a site-controlled semiconductor V-groove quantum wire (QWR) into a photonic-crystal (PhC) membrane microcavity is reported. Reproducible coupling of the QWR emission to a mode of the PhC cavity is evidenced by the narrower linewidth, higher intensity, and variation with temperature and PhC parameters of the QWR line. Finite difference time domain simulations of the cavity are employed for identifying the observed mode. The presented PhC-QWR coupled structures are promising for achieving very low-threshold lasers and for studies of one-dimensional photon-exciton coupled systems.

Purcell effect in photonic crystal microcavities embedding InAs/InP quantum wires

“…The exciton recombination dynamics as a function of the excitation density and temperature in a QWR ensemble has been studied separately [11] but some of the results have been used here for calculation of the experimental values of the Purcell factor. The radiative recombination at very low temperatures is dominated by exciton localization at the QWR fluctuations in width, but above 40-50 K the exciton dynamics is dominated by free exciton recombination [11]. This is the reason why the study has been carried out at 80 K. …”

“…Ideally, the density-of-states (DOS) in a QD is described by a series of Dirac's deltas while in the case of QWs and QWRs it is a continuum of states above the fundamental transition, an important fact for technological applications like nano-lasers. InAs/InP QWRs can be used for devices working at two important optical telecom windows in 1.3 and 1.5 µm [9][10][11]. They also exhibit efficient luminescence and lasing even at 1.6 µm [12].…”

Deterministic quantum photonics with ordered systems of quantum wires and quantum dots

“…The site-controlled QRWs and QDs have been incorporated into specific designs of photonic crystal (PhC) cavities using a procedure based on electron beam lithography and wet/dry etching [15]. The structures are fabricated on "membrane substrates" consisting of (100) or (111)B GaAs substrates overgrown with ~1 µm of a sacrificial AlGaAs layer of high Al content followed by a ~200 nm GaAs layer, later serving as the thin membrane of the PhC structure.…”

Magneto-optical properties of single site-controlled InGaAsN quantum wires grown on prepatterned GaAs substrates

“…In recent years, an effective technique for the fabrication of site-controlled homogeneous quantum wires (QWRs)-naturally fit for integration with GaAs-based nanophotonic devices 8,15,16 -has been developed, based on metal-organic chemical vapor deposition (MOCVD) on (001) GaAs substrates patterned with ordered arrays of V grooves. [17][18][19][20][21] Such V grooves are relatively long (up to several hundreds of microns) linear recesses, oriented along the [110] crystallographic direction and obtained through a combination of electron-beam lithography and wet chemical etching.…”

“…[17][18][19][20][21] Such V grooves are relatively long (up to several hundreds of microns) linear recesses, oriented along the [110] crystallographic direction and obtained through a combination of electron-beam lithography and wet chemical etching. 15,18 Their distinctive V-shaped cross section (typically having sub-μm width) is defined by two mirroring {111}A crystal planes, exposed by the etching procedure. Due to a combination of growthrate anisotropy, curvature-induced capillarity, and entropy of mixing effects, [21][22][23] MOCVD of a thin layer of InGaAs on a GaAs substrate patterned with V grooves results in the formation of a QWR along the main axis of each groove.…”