Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices

Shandyba, N A; Panchenko, Ivan; Tominov, R. V.; Smirnov, V. A.; Pelipenko, M. I.; Zamburg, Evgeny; Chu, Ying-Hao

doi:10.1088/1742-6596/1124/8/081036

Cited by 6 publications

(2 citation statements)

References 17 publications

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“…For the manufacture of neuromorphic systems, the latter is the most promising in terms of energy efficiency and multibit rate. The principle of operation of ReRAM is based on the resistive switching effect, i.e., a change in resistance between the states of high resistance (R HRS ) and low resistance (R LRS ) due to the formation and destruction of a nanoscale conduction channel in the bulk of the oxide film under an external electric field [ 35 , 36 , 37 , 38 ]. Nanoscale conduction channel consists of many oxygen vacancies, the generation or recombination of each of which leads to the emergence of a new resistive state, which makes it possible to create a neuromophilic system with a potentially high degree of multibitness.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

et al. 2020

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We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10−4 Torr to 3 × 10−2 Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 1017 cm−3 to (42.64 ± 4.46) × 1017 cm−3, electron mobility from 0.25 ± 0.03 cm2/(V·s) to 7.12 ± 1.32 cm2/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 106 Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 103 Ω, and the ratio RHRS/RLRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films.

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Section: Introductionmentioning

confidence: 99%

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

et al. 2020

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“…At the present stage of nanotechnology development, one of the most promising methods for surface diagnostics is scanning probe microscopy (SPM). The use of SPM methods allows the study of the local geometric, electrical, and mechanical properties of the sample surface [23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Application of Probe Nanotechnologies for Memristor Structures Formation and Characterization

Smirnov¹,

Il’ina²,

Avilov³

et al. 2019

Memristors - Circuits and Applications of Memristor Devices [Working Title]

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This chapter presents the results of experimental studies of the formation and investigation of the memristors by probe nanotechnologies. This chapter also perspectives and possibilities of application of local anodic oxidation and scratching probe nanolithography for the manufacture of memristors based on titanium oxide structures, nanocrystalline ZnO thin film, and vertically aligned carbon nanotubes. Memristive properties of vertically aligned carbon nanotubes, titanium oxide, and ZnO nanostructures were investigated by scanning probe microscopy methods. It is shown that nanocrystalline ZnO films manifest a stable memristor effect slightly dependent on its morphology. Titanium oxide nanoscale structures of different thicknesses obtained by local anodic oxidation demonstrate a memristive effect without the need to perform any additional electroforming operations. This experimentally confirmed the memristive switching of a two-electrode structure based on a vertically aligned carbon nanotube. These results can be used in the development of designs and technological processes of resistive random access memory (ReRAM) units based on the memristor devices.

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Resistive switching control in forming-free nanocrystalline zinc oxide films

Tominov

Avakyan

Avilov

et al. 2020

J. Phys.: Conf. Ser.

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The influence of control parameters on the resistive switching effect in forming-free nanocrystalline zinc oxide films was studied. It was shown, resistive switching from HRS to LRS was observed at (+3.3±0.4) V, and from LRS to HRS at (-2.8±0.6) V. Changing the triangular sweep voltage signal phase by 90 degrees leads to a decrease R HRS from (52.7±5.2) kΩ to (38.3±20.2) kΩ, to an increase R LRS from (3.3±2.2) kΩ to (4.5±3.1) kΩ, and to a decrease R HRS /R LRS ratio from 17 to 9. Experimental results obtained showed, that an increase in amplitude of the sweep voltage U A from 2V to 6V and sweep time t A from 1s to 5s leads to a decrease in the R HRS /R LRS ratio from (25.1±2.4) to (9.3±0.6) and from (23.2±1.8) to (10.4±0.8), respectively. The results can be useful for the development of technological fundamentals of new-generation micro- and nanoelectronics elements manufacturing, including ReRAM elements for neuromorphic structures based on forming-free ZnO nanocrystalline films.

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Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices

Cited by 6 publications

References 17 publications

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

The Effect of Growth Parameters on Electrophysical and Memristive Properties of Vanadium Oxide Thin Films

Application of Probe Nanotechnologies for Memristor Structures Formation and Characterization

Resistive switching control in forming-free nanocrystalline zinc oxide films

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