SLASH concept: A novel approach for simplified interdigitated back contact solar cells fabrication

Desrues, T.; Vecchi, Sylvain De; Souche, F.; Muñoz, Delfina; Ribeyron, P.J.

doi:10.1109/pvsc.2012.6317901

Cited by 14 publications

(11 citation statements)

References 7 publications

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“…This is on par with the best published back-contacted SHJ devices [10], [11], [35], excluding the outstanding results of Panasonic [8] and Sharp [9], of which precise details about the fabrication complexity are undisclosed.…”

Section: Best Interdigitated Back-contacted Silicon Heterojunctionmentioning

confidence: 73%

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Tomasi

Paviet‐Salomon

Lachenal³

et al. 2014

IEEE J. Photovoltaics

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Abstract-We report on the fabrication of back-contacted silicon heterojunction solar cells with conversion efficiencies above 21%. Our process technology relies solely on simple and size-scalable patterning methods, with no high-temperature steps. Using in situ shadow masks, doped hydrogenated amorphous silicon layers are patterned into two interdigitated combs. Transparent conductive oxide and metal layers, forming the back electrodes, are patterned by hot melt inkjet printing. With this process, we obtain high shortcircuit current densities close to 40 mA/cm 2 and open-circuit voltages exceeding 720 mV, leading to a conversion efficiency of 21.5%. However, moderate fill factor values limit our current device efficiencies. Unhindered carrier transport through both heterocontact layer stacks, as well as higher passivation quality over the minority carrier-injection range relevant for solar cell operation, are identified as key factors for improved fill factor values and device performance.

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Section: Best Interdigitated Back-contacted Silicon Heterojunctionmentioning

confidence: 73%

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Tomasi

Paviet‐Salomon

Lachenal³

et al. 2014

IEEE J. Photovoltaics

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“…One of the key limitations is that the back‐contact architecture results in additional fabrication complexity, mainly due to the need to form interdigitated n‐ and p‐type a‐Si:H strips. Hence, different a‐Si:H patterning approaches have been developed including photolithography, lift‐off, shadow mask deposition, screen printing, inkjet printing, and laser ablation (LA) . Several research groups focus their work on LA due to the following three advantages: LA is a fast, single‐side, and contactless process; it allows a flexible device design; and it has high process precision.…”

Section: Different Laser Processing Speeds Used In This Work and Corrmentioning

confidence: 99%

Laser Assisted Patterning of a-Si:H: Detailed Investigation of Laser Damage

Xu¹,

Bearda

Radhakrishnan

et al. 2017

Phys. Status Solidi RRL

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A detailed investigation of the laser damage to amorphous silicon (a‐Si:H) layers patterned by laser ablation (LA) and wet chemical etching is presented. This approach can be applied to pattern the rear side of silicon heterojunction interdigitated back‐contact solar cells. Only the top sacrificial a‐Si:H laser‐absorbing layer of an a‐Si:H/SiOx/a‐Si:H/c‐Si stack is ablated. Laser damage in the bottom a‐Si:H layer and a‐Si:H/c‐Si interface is analyzed by both scanning electron microscopy and transmission electron microscopy. We show that the a‐Si:H/c‐Si passivation is degraded by laser damage and that this degradation can be diminished by increasing laser processing speed. This is attributed to a decrease of laser‐irradiated area, and particularly smaller overlapping zones of adjacent laser pulses. The re‐passivation quality after LA and wet etching is similar to that of as‐passivated samples. This indicates that laser damage is not present in the bulk c‐Si substrate but only in the a‐Si:H passivation layer, which is removed during subsequent wet etching, thus allowing high quality repassivation.

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“…Another popular “litho‐free” alternative to patterning, which is contact‐less and also drastically reduces the number wet chemical steps, is laser ablation‐assisted patterning . In this approach, the pattern is often directly structured onto a sacrificial mask layer on top of the a‐Si:H stack to be patterned.…”

Section: Introductionmentioning

confidence: 99%

“…14 Another popular "litho-free" alternative to patterning, which is contact-less and also drastically reduces the number wet chemical steps, is laser ablation-assisted patterning. [15][16][17][18][19][20] In this approach, the pattern is often directly structured onto a sacrificial mask layer on top of the a-Si:H stack to be patterned. While there is a risk of laser-induced thermal damage to the crystalline silicon and the heterocontact in the laser-ablated areas, 19,20 significant strides have been made recently in tackling this issue.…”

Section: Introductionmentioning

confidence: 99%

A novel silicon heterojunction IBC process flow using partial etching of doped a‐Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%

Radhakrishnan

Uddin

et al. 2019

Progress in Photovoltaics

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We present a novel process sequence to simplify the rear‐side patterning of the silicon heterojunction interdigitated back contact (HJ IBC) cells. In this approach, interdigitated strips of a‐Si:H (i/p+) hole contact and a‐Si:H (i/n+) electron contact are achieved by partially etching a blanket a‐Si:H (i/p+) stack through an SiOx hard mask to remove only the p+ a‐Si:H layer and replace it with an n+ a‐Si:H layer, thereby switching from a hole contact to an electron contact in situ, without having to remove the entire passivation. This eliminates the ex situ wet clean after dry etching and also prevents re‐exposure of the crystalline silicon surface during rear‐side processing. Using a well‐controlled process, high‐quality passivation is maintained throughout the rear‐side process sequence leading to high open‐circuit voltages (VOC). A slightly higher contact resistance at the electron contact leads to a slightly higher fill factor (FF) loss due to series resistance for cells from the partial etch route, but the FF loss due to J02‐type recombination is lower, compared with reference cells. As a result, the best cell from the partial etch route has an efficiency of 22.9% and a VOC of 729 mV, nearly identical to the best reference cell, demonstrating that the developed partial etch process can be successfully implemented to achieve cell performance comparable with reference, but with a simpler, cheaper, and faster process sequence.

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SLASH concept: A novel approach for simplified interdigitated back contact solar cells fabrication

Cited by 14 publications

References 7 publications

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Laser Assisted Patterning of a-Si:H: Detailed Investigation of Laser Damage

A novel silicon heterojunction IBC process flow using partial etching of doped a‐Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%

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