Small-angle subgrain boundaries emanating from dislocation pile-ups in multicrystalline silicon studied with synchrotron white-beam X-ray topography

Oriwol, D.; Carl, Eva‐Regine; Danilewsky, A.N.; Sylla, L.; Seifert, W.; Kittler, M.; Leipner, Hartmut S.

doi:10.1016/j.actamat.2013.08.002

Cited by 44 publications

(29 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The high‐resolution electron backscatter diffraction revealed a maximum stress at the leading dislocation of 500 MPa much more than would demand for dislocation multiplication. Quite similar effect has been observed in mc‐Si ingots .…”

Section: Experimental Observations and Counter Actionssupporting

confidence: 52%

Dislocation patterning and bunching in crystals and epitaxial layers ‐ a review

Rudolph

2016

Crystal Research and Technology

View full text Add to dashboard Cite

Cellular patterning and dislocation bundling as structures of dislocation dynamics in as-grown crystals and epitaxial layers are reviewed. Selected examples of multicrystalline (mc) silicon, III-V and II-VI compounds are presented. The origins of often overlaid dislocation networks varying by the cell scale and cell wall design are reported. The introduction in selected phenomenological fundamentals shows that dynamical polygonization basing on dislocation glide cannot be the only possible formation process. Even at high temperatures the point defect assisted climb plays a decisional role in the dislocation dynamics. Dissipative structuring via non-equilibrium thermodynamics is considered. Reduction of thermo-mechanical stress and control of stoichiometry are practical counter measures. Special attention is paid to the dislocation banding and their pile-up at grain boundaries leading to dislocation bunching. On the other hand at heteroepitaxial processes the controlled banding of dislocations is used to grow out them laterally. Further, second phase inclusions are responsible for dislocation accumulations. Their incorporation must be avoided by good mixing of the fluid phase and composition control. The required bridge intensification between crystal growers and metal physicists as well as the need of in situ experiments and advanced numeric modeling is underlined.

show abstract

Section: Experimental Observations and Counter Actionssupporting

confidence: 52%

Dislocation patterning and bunching in crystals and epitaxial layers ‐ a review

Rudolph

2016

Crystal Research and Technology

View full text Add to dashboard Cite

show abstract

“…The observed microstructure in dislocations rich regions in mc-Si appears to be formed through a recovery process (rather than plastic slip) [20]. Lomer dislocations have also been identified at small-angle grain boundaries in mc-Si [21]. From reference [22], it can also be deduced that dislocations substructures might strongly depend on each grain orientation.…”

Section: Introductionmentioning

confidence: 93%

Subgrains, micro-twins and dislocations characterization in monolike Si using TEM and in-situ TEM

Lantreibecq

Monchoux

Pihan

et al. 2018

Materials Today: Proceedings

View full text Add to dashboard Cite

A critical aspect in the development of mono-like Silicon for photovoltaic (PV) application lies in the control of its defect microstructure. While micro-twins do not seem to represent a major concern regarding electrical activity, some dislocations and low angle grain boundaries need to be avoided in the growing process because of their recombination properties. Here, we have studied how these defects grow and interact together in order to understand what are the mechanisms responsible for their presence in the cast ingots. We show that, in our specific convex liquid-solid interface growth mode, micro-twins probably originate from this interface while dislocations and subgrains build up both by epitaxy at the solid liquid interface and through dislocation-boundary interactions in the solidified region. Post-growth TEM characterization allowed identifying constitutive dislocations of some subgrain boundaries for the case of [001] seeds. In-situ TEM straining of Si at high temperature also allowed measuring dislocation mobility at several temperatures. Those are compared to the dislocation velocities in pure Czochralski Si found in literature.

show abstract

“…This suggests that dislocation clusters in elongating grains, may propagate and align into a network of small angle grain boundaries. This type of SA GB formation has also been observed in conventional mc-Si [17]. In this template grown ingot, the high density of random type GBs may suppress the propagation of dislocations between different grains, however, elongating grains do not have random GBs intersecting the dislocation propagation path, hence dislocations propagate, align and form SA GB network at later stage of growth.…”

Section: Contributed Articlementioning

confidence: 68%

Control of extended defects in cast multicrystalline silicon using polycrystalline template

Prakash

Jiptner

Chen

et al. 2015

Phys. Status Solidi C

View full text Add to dashboard Cite

Extended defects were controlled using polycrystalline silicon as a template for cast‐growth of multicrystalline silicon. At the initial stage of growth, small randomly oriented grains with a high density of random type grain boundaries were obtained. With growth, the grain size increased and the fraction of random grain boundaries decreased. Electrical activity of defects was investigated and it was found that with growth, network of small angle grain boundaries became the most electrically active defects. This network of small angle grain boundaries were found to have a tilt angle less than 3° and were mainly found in elongating grains. The density of these highly electrically active grain boundaries increased with growth. This can be attributed to propagation and agglomeration of dislocations into small angle grain boundaries. The high density of random grain boundaries in this ingot may suppress dislocation propagation between grains, however they do not intersect elongating grains enabling dislocation propagation in elongated grains. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Small-angle subgrain boundaries emanating from dislocation pile-ups in multicrystalline silicon studied with synchrotron white-beam X-ray topography

Cited by 44 publications

References 18 publications

Dislocation patterning and bunching in crystals and epitaxial layers ‐ a review

Dislocation patterning and bunching in crystals and epitaxial layers ‐ a review

Subgrains, micro-twins and dislocations characterization in monolike Si using TEM and in-situ TEM

Control of extended defects in cast multicrystalline silicon using polycrystalline template

Contact Info

Product

Resources

About