Small-Signal Modeling of Gate-All-Around (GAA) Junctionless (JL) MOSFETs for Sub-millimeter Wave Applications

Lee, Jae-Sung; Cho, Seong-Jae; Park, Byung‐Gook; Harris, James S.; Kang, In Man

doi:10.5573/jsts.2012.12.2.230

Cited by 10 publications

(6 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To extract the small-signal model parameters, we have followed the extraction methodology reported for nanowire based MOSFETs in refs [12][13][14]. The spacer length in GAA MOS-FETs is to be comparable to the channel length as recommended by IRDS 2017 [29].…”

Section: Resultsmentioning

confidence: 99%

“…C side is estimated as 1aF, which is very small and can be neglected. The remaining parasitic capacitances are extracted and presented as C gse , and C gde [13], which are the dominant capacitances of all the parasitic capacitances [42]. Parameters C gde , and C gse are the extrinsic gate to drain and gate to source parasitic capacitances.…”

Section: Resultsmentioning

confidence: 99%

“…Parameters C gde , and C gse are the extrinsic gate to drain and gate to source parasitic capacitances. The above-stated parameters are extracted in the off-state of operation [13]; hence, no variation is observed in their values because of self-heating. The Y-parameters of the equivalent circuit during the off-state of operation can be obtained as follows [12]:…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Effect of self-heating on small-signal parameters of In_0.53Ga_0.47As based gate-all-around MOSFETs

Srinivas¹,

Kumar²,

Tiwari³

2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this work, the effect of self-heating on small-signal parameters of In0.53Ga0.47As based gate-all-around nanowire MOSFETs is explored using thermally calibrated simulation results. The effects of interfacial thermal resistance (ITR) of Al2O3/In0.53Ga0.47As interface, the number of nanowires (N), and ambient temperature ( T A ) on RF performance metrics such as transition frequency ( f t ) , max-oscillation frequency ( f max ) , intrinsic current gain ( h 21 ) , power gain (maximum available gain/maximum stable gain), and transconductance ( g m ) are thoroughly investigated in order to assess the self-heating induced degradation. The impact of self-heating has also been observed on small-signal parameters such as C gd, C gs, R gd, R gs, and τ. Transition frequency and maximum oscillation frequency decrease significantly when lattice temperature rises because of self-heating. The order of ITR for Al2O3/In0.53Ga0.47As interface has been reported to be 10 − 5 cm 2 K W − 1 in the technical literature. Increasing ITR from 10−5 to 10 − 4 cm 2 K W − 1 decreases f t and f max by 12 and 70 GHz, respectively.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Effect of self-heating on small-signal parameters of In_0.53Ga_0.47As based gate-all-around MOSFETs

Srinivas¹,

Kumar²,

Tiwari³

2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Since the minimum feature size of complementary metaloxide-semiconductor (CMOS) devices has been scaled down to the nanoscale regime, the radio-frequency (RF) performance of silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFETs) has markedly improved, [1][2][3][4][5][6][7][8][9][10][11][12] and is now comparable to that of compound semiconductor transistors based on GaAs and GaN. [13][14][15][16][17][18][19] Recently, a compact model and a parameter extraction method have been developed intensively for Si RF MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis

Kim

Shin

Cho

et al. 2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

In this work, we present a novel analytical method based on radio-frequency (RF) analysis for the accurate and reliable extraction of source and drain (S/D) series resistances in silicon nanowire (SNW) metal–oxide–semiconductor field-effect transistors (MOSFETs). The proposed method provides decomposed RF model equations for the gate-bias-independent off-state and gate-bias-dependent on-state components from both Y- and Z-parameters. The validity of our extraction method for S/D series resistances in SNW MOSFETs has been carefully tested in comparison with that of a previously reported method as well as with the physical three-dimensional (3D) device simulation. The schematically modeled Y- and Z-parameters have demonstrated excellent agreement with the numerical 3D device simulation results for various SNW MOSFET structures up to the 100 GHz frequency regime.

show abstract

“…Thus, the junctionless transistor (JLT) without counter-doped metallurgical junctions has been proposed [5][6][7][8][9]. In comparison with the conventional MOSFETs, the JLT features a single-doping species at the same concentration in its source, drain, and channel.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

Kim¹,

Seo²,

Yoon³

et al. 2014

JSTS:Journal of Semiconductor Technology and Science

View full text Add to dashboard Cite

Abstract-We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulktype fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width (W fin ) and height (H fin ) of the fin as well as the channel doping concentration (N ch ). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.Index Terms-Junctionless, fin-shaped field-effect transistor (FinFET), short-channel effect (SCE), 3-D device simulation

show abstract

Small-Signal Modeling of Gate-All-Around (GAA) Junctionless (JL) MOSFETs for Sub-millimeter Wave Applications

Cited by 10 publications

References 8 publications

Effect of self-heating on small-signal parameters of In_0.53Ga_0.47As based gate-all-around MOSFETs

Effect of self-heating on small-signal parameters of In_0.53Ga_0.47As based gate-all-around MOSFETs

Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis

Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

Contact Info

Product

Resources

About

Small-Signal Modeling of Gate-All-Around (GAA) Junctionless (JL) MOSFETs for Sub-millimeter Wave Applications

Cited by 10 publications

References 8 publications

Effect of self-heating on small-signal parameters of In0.53Ga0.47As based gate-all-around MOSFETs

Effect of self-heating on small-signal parameters of In0.53Ga0.47As based gate-all-around MOSFETs

Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis

Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

Contact Info

Product

Resources

About

Effect of self-heating on small-signal parameters of In_0.53Ga_0.47As based gate-all-around MOSFETs

Effect of self-heating on small-signal parameters of In_0.53Ga_0.47As based gate-all-around MOSFETs