electronics, flexible screens, automobile windshield navigation, and IoT (Internet of Things) applications, etc. [1][2] However, the working duration and energy consumption are the key problems that cannot be ignored for the wide applications of optoelectronic devices. Thanks to the ability for long-time working independently without energy consumption, self-powered photodetectors (PDs) can be the indispensable devices to make the detection systems economical and simple. [2,4,6] As the crucial components in the detection system, ultraviolet (UV) PDs are required for the wide applications in UV communication, fire warning, high-voltage corona detection, and ozone-hole monitoring. [1][2] Therefore, self-powered UV PDs with high flexibility and invisible functionality are pretty promising and necessary for the nextgeneration optoelectronic devices.Up to now, some research groups have developed the labor-less self-assembly approaches of fabricating the PDs and sensors requiring low power consumption. [7][8][9] For instance, Nasiri et al. reported a fully transparent ZnO PD with a gigantic photo-to-dark current ratio of 9.3 × 10 6 based on structural engineering. [7] With a self-assembly SnO 2 −graphene oxide nanoheterojunctions, Pargoletti et al. fabricated a room-temperature chemical sensor with an excellent UV light responsivity of 400 A W −1 . [9] Flexible self-powered ultraviolet (UV) photodetectors (PDs) with an invisible functionality are essential but challenging to be fabricated for the applications of next-generation optoelectronic devices. In this work, a flexible photo electrochemical (PEC) (Al,Ga)N PD with three excellent characteristics, which are the ultrahigh UV/visible reject ratio, ultrahigh detectivity, and transmissivity, is proposed and demonstrated successfully. By numerical simulations, it is also found that the cross-sectional absorption area should be a nonignorable factor affecting the photogenerated current under bending states. After continuous long-time working or preserving, the PD performance can keep quite stable. Thanks to the pretty thin bending section of GaN connecting layer, the piezoelectric charges generated by stress are proposed to have only a limited effect in the energy band and photocurrent density. Therefore, when bending or twisting the PD at a high degree for many times, both the stable on-off switching characteristics and photocurrent densities can still be achieved. With the demonstrated ultrahigh detectivity and stability of flexibility, this PD would enable a broad range of optoelectronic applications, including omnidirectional UV detection and wearable intelligent sensors.