Soft Chemical Mechanical Polishing Pad for Oxide CMP Applications

Kenchappa, Nandan Baradanahalli; Popuri, R.; Chockkalingam, Ashwin; Jawali, Puneet; Jayanath, Shiyan; Redfield, Daniel; Bajaj, Rajeev

doi:10.1149/2162-8777/abdc40

Cited by 15 publications

(7 citation statements)

References 39 publications

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“…In fact, the pad asperities and their interactions at different loading pressures have a large effect on the surface removal rate. 45 The pad surface micro-texture and asperity height distribution 46 influence the contact behavior between the design structures and polishing pad at feature-scale planarization. In order to capture the design pattern effect on the dishing and surface topography, the influence of the pad properties have been simplified as an elastic foundation model to approximately describe the main elastic polishing characteristic in the present work.…”

Section: Resultsmentioning

confidence: 99%

A Physics-Based Chip-Scale Surface Profile Model for Tungsten Chemical Mechanical Planarization

Cao

Liu

2023

ECS J. Solid State Sci. Technol.

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A novel physics-based chip-scale surface profile model is proposed to focus on investigating the influence of the design pattern effects on the tungsten surface topography in the chemical mechanical planarization (CMP) process. The two-scale contact pressure computation method is constructed to obtain an accurate pressure distribution between the wafer surface and the polishing pad. The chip-scale contact mechanics-based global pressure has been first introduced to capture the long range height variation of W CMP caused by deposition and polishing processes. Then, the feature-scale pattern dependent effect is considered to accurately calculate the local contact pressure which is further integrated with the fundamental of steady-state oxidation reaction to construct a new material removal rate model used for simulation of surface height evolution. The model prediction results are consistent with the collected experimental data in predicting the dishing effect at different slurry conditions. The present CMP model can be utilized to assist in analyzing the influence of the design pattern effects on the wafer surface topography and be readily incorporated into a design for manufacturability flow to form a chip-scale planarity simulator to detect the hotspots of the entire design layout.

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Section: Resultsmentioning

confidence: 99%

A Physics-Based Chip-Scale Surface Profile Model for Tungsten Chemical Mechanical Planarization

Cao

Liu

2023

ECS J. Solid State Sci. Technol.

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“…Chemical mechanical polishing (CMP) technology, due to its ultrahigh accuracy and global planarization performance, is widely used in the LED substrates, high-end integrated circuits and medical device fields (Aida et al , 2021; Bun-Athuek et al , 2017;Krishnan et al , 2010). Polishing pad is one of the critical parts in CMP system, which has a direct influence on the workpiece surface quality (Kenchappa et al , 2021). During CMP process, the rotating wafer is polished by the resilient pad under interfacial pressure conditions, while the polishing solution flows in between the wafer and the pad (Chen et al , 2020).…”

Section: Introductionmentioning

confidence: 99%

Tribological glazing evolution of fixed abrasive pad under different polishing solution conditions

Tian,

Wu,

Pang

et al. 2023

ILT

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Purpose This study aims to clarify the influence mechanism of polishing solution type on the glazing evolution of fixed abrasive pad under different interfacial pressure conditions. Design/methodology/approach The tribological experiments were carried out on the friction and wear machinery with W3-5 diamond fixed abrasive pad and quartz glass workpiece under three polishing solution types of five pressure conditions. The changes of surface morphology, porosity and hardness of fixed abrasive pad were detected by white light interferometer, optical microscope and shore hardness tester. Findings The results showed that the glazed phenomenon of fixed abrasive pad is occurred after a certain time, which is more obvious with the increasing of interfacial pressures. The polishing solution type has a significant effect on the glazing time, although the glazed phenomenon is inevitable. The mechanism of it is that the micro-convex peaks on the surface of the fixed abrasive pad are easily wear, and the pores are blocked by the accumulation of waste debris generated during the experiment process. Thus, a smooth and high-density hard layer is formed on the surface of the fixed abrasive pad which induces the decreasing of the friction coefficient and surface roughness value. For selected polishing solution types, the wear rate of micro-convex peaks is different due to the corrosion action difference with polishing pad surface. Originality/value The main contribution of this work is to provide a new investigating method for further understanding the glazing evolution mechanism of fixed abrasive pad. Peer review The peer review history for this article is available at: https://publons.com/publon/10.1108/ILT-08-2023-0257/

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“…There are many factors that affect the polishing performance in CMP, such as abrasives, , additives, working parameters (pressure, temperature, etc. ), , polishing pads, , and so forth. However, most current strategies encounter the problem of the interactions between the abrasives and the polished material .…”

Section: Introductionmentioning

confidence: 99%

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Luo

et al. 2022

ACS Appl. Electron. Mater.

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The polishing activity of CeO 2 abrasives is enhanced by improving the Ce 3+ concentration on their surface. In this study, a series of Ce 1−x La x O 2 abrasives with different La 3+ doping were prepared. The abrasives were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. The effects of La 3+ doping on the morphology, size, and Ce 3+ concentration of the abrasives were studied. The morphology of the particles changes from sphere to octahedron with the La 3+ doping. The lattice expansion of the CeO 2 crystal after La 3+ doping also significantly improves the Ce 3+ concentration on the abrasive surface. However, the Ce 3+ concentration on the surface gradually became saturated when the x was 0.2 or more. The polishing performance proved that the material removal rate (MRR) is closely related to the Ce 3+ concentration generated by La 3+ doping. The MRR of pure CeO 2 abrasives with a Ce 3+ concentration of 20.53% on a SiO 2 substrate is 59.31 nm/min, while the Ce 0.7 La 0.3 O 2 abrasives with the Ce 3+ concentration increased to 34.41% achieved 101.12 nm/min. The polished surface quality was characterized by atomic force microscopy, which shows improved roughness of all samples. Furthermore, the differences in the removal rate of Ce 3+ and Ce 4+ in CeO 2 -based abrasives on the SiO 2 substrate were also discussed.

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Soft Chemical Mechanical Polishing Pad for Oxide CMP Applications

Cited by 15 publications

References 39 publications

A Physics-Based Chip-Scale Surface Profile Model for Tungsten Chemical Mechanical Planarization

A Physics-Based Chip-Scale Surface Profile Model for Tungsten Chemical Mechanical Planarization

Tribological glazing evolution of fixed abrasive pad under different polishing solution conditions

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

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Soft Chemical Mechanical Polishing Pad for Oxide CMP Applications

Cited by 15 publications

References 39 publications

A Physics-Based Chip-Scale Surface Profile Model for Tungsten Chemical Mechanical Planarization

A Physics-Based Chip-Scale Surface Profile Model for Tungsten Chemical Mechanical Planarization

Tribological glazing evolution of fixed abrasive pad under different polishing solution conditions

Enhancing the Polishing Efficiency of CeO2 Abrasives on the SiO2 Substrates by Improving the Ce3+ Concentration on Their Surface

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Product

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About

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface