Soft Error Rate Reduction in Dynamic Memory with Trench Capacitor Cell

Ishiuchi, H.; Watanabe, T.; Tanaka, Tomoharu; Kishi, K.; Ishikawa, M.; Goto, N.; Kohyama, K.; Noji, H.; Ozawa, O.

doi:10.1109/irps.1986.362139

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1986

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“…Due to the optirmized nature of the cell, mechanisms such as field funneling are not thought to impose limitations. This data is confirmned by other, independent, work [7]. Another alternative is an oxide/nitride sandwich dielectric.…”

Section: Alternate Dielectricssupporting

confidence: 84%

Reliability of Trench Capacitors for VLSI Memories

Baglee

Beydler

Shih

et al. 1986

24th International Reliability Physics Symposium

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Trench capacitors will be used in high density memories, such as the IMbit or 4Mbit DRAM, in order to minimize the size of the chip. In this paper the properties and reliability of trench capacitors are discussed. We show that the leakage and breakdown characteristics are dominated by the trench profile. Accelerated wearout shows that trench capacitors are suitable for 5V operation, and that alpha particle induced soft error rates are similar to, or better than, conventional planar devices.

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Section: Alternate Dielectricssupporting

confidence: 84%