SOI active pixel detectors of ionizing radiation-technology and design development

Marczewski, J.; Domanski, K.; Grabiec, P.; Grodner, M.; Jaroszewicz, B.; Kociubiński, Andrzej; Kucharski, K.; Tomaszewski, D.; Kucewicz, W.; Kuta, S.; Machowski, W.; Niemiec, H.; Sapor, M.; Caccia, M.

doi:10.1109/tns.2004.829540

Cited by 17 publications

(12 citation statements)

References 7 publications

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“…Developments on monolithic pixels in SOI technology can also be found on radiation applications, [6]. SOI detectors wafers are formed by bonding together a top wafer with low resistivity and a bottom wafer with high resistivity.…”

Section: Introductionmentioning

confidence: 99%

Avalanche photodiodes for high energy particle tracking in 130 nm CMOS technology

Arbat

Diéguez

Gascon

et al. 2009

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)

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Particle detection can be done with many different sensors. In this case, the particle detector is based on avalanche photodiodes (APDs) integrated on standard CMOS technology. The integration of the sensors allows the possibility to integrate also the processing circuitry, reducing the volume of components, the complexity, and also the cost of the total device. The sensor is based on a double sensor detection to discriminate the inherent noise of APDs. An electrical model of the sensor, including noise modeling of dark counts and afterpulsing, based on fabricated component, has been developed to proof the suitability of the proposed detector circuit.

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Section: Introductionmentioning

confidence: 99%

Avalanche photodiodes for high energy particle tracking in 130 nm CMOS technology

Arbat

Diéguez

Gascon

et al. 2009

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)

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“…There are four parallel sensing diodes spaced 13 um apart in each pixel. Each pixel has a Charge Sensitive Amplifier, CR-RC 2 shaper, discriminator and a 12 bit counter as shown in Figure 2. There are 280 transistors in each pixel.…”

Section: Fermilab Soi Cmos Detectormentioning

confidence: 99%

“…SOI CMOS detectors offer larger signals with faster rise times due to depleted diode regions in the high resistivity substrate beneath the buried oxide (BOX). Early work on SOI CMOS detectors was reported by C. Penng [1], followed by J. Marczewski [2]. Recent availability of SOI CMOS in deep submicron processes has spurred new developments [3].…”

Section: Introductionmentioning

confidence: 99%

3d circuit integration

Yarema¹

2008

Proceedings of the 16th International Workshop on Vertex Detectors — PoS(Vertex 2007)

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High Energy Physics continues to push the technical boundaries for electronics. There is no area where this is truer than for vertex detectors. Lower mass and power along with higher resolution and radiation tolerance are driving forces. New technologies such as SOI CMOS detectors and three dimensional (3D) integrated circuits offer new opportunities to meet these challenges. The fundamentals for SOI CMOS detectors and 3D integrated circuits are discussed. Examples of each approach for physics applications are presented. Cost issues and ways to reduce development costs are discussed.

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“…Leading sensor techniques are Charge Coupled Devices (CCDs) [4], Monolithic Active Pixel Sensors (MAPS) [5] and Depleted Field Effect Transistors (DEPFETs) [6]. Alternative approaches are based on the Geiger mode avalanche photodiodes (GAPDs) [7,8] and Silicon-On-Insulator (SOI) devices [9]. More recently, CMOS sensors exploiting the vertical integration technology (3D) have also gained interest [10].…”

Section: Introductionmentioning

confidence: 99%

A test beam setup for the characterization of the Geiger-mode avalanche photodiode technology for particle tracking

Figueras

Alonso

Trenado

et al. 2012

Nuclear Instruments and Methods in Physics Research Section A:

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Keywords:The Geiger-mode avalanche photodiode (GAPD) CMOS EUDET/AIDA telescope Schottky detector Test beam Trigger logic unit (TLU). a b s t r a c tIt is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite gain and time accuracy in the picosecond range that can be used for single photon detection. However, their performance in particle detection still remains unexplored. In this contribution, we are going to expose different steps that we have taken in order to prove the efficiency of the Geiger mode avalanche photodiodes in the aforementioned field. In particular, we will present a setup for the characterization of these sensors in a test beam. The expected results of the test beam at DESY and CERN have been simulated with Geant4 and will also be exposed.

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SOI active pixel detectors of ionizing radiation-technology and design development

Cited by 17 publications

References 7 publications

Avalanche photodiodes for high energy particle tracking in 130 nm CMOS technology

Avalanche photodiodes for high energy particle tracking in 130 nm CMOS technology

3d circuit integration

A test beam setup for the characterization of the Geiger-mode avalanche photodiode technology for particle tracking

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