Sol-gel-processed yttrium-doped NiO as hole transport layer in inverted perovskite solar cells for enhanced performance

Hu, Zijun; Chen, Da; Pan, Yang; Yang, Lijun; Qin, Laishun; Huang, Yuexiang; Zhao, Xiaochong

doi:10.1016/j.apsusc.2018.01.236

Cited by 114 publications

(63 citation statements)

References 41 publications

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“…143 Yttrium-doped NiO films were processed by the sol-gel method in an inverted planar architecture to obtain a highly stable film with a V oc , J sc , FF, and a PCE of 1.00 V, 23.82 mA/cm 2 , 68%, and 16.31%, respectively. 144 The improved performance as a function of the HTM incorporated was attributed to the increased transport of holes, highly compact morphological area and reduced recombination of carriers. Lee et al doped nickel oxide with zinc and observed a good penetration of the zinc into the NiO; which further enhanced its electrical conductivity, the density of charge carriers and stability of the perovskite device.…”

Section: Doped Nickel Oxide As Htmmentioning

confidence: 99%

The use of nickel oxide as a hole transport material in perovskite solar cell configuration: Achieving a high performance and stable device

et al. 2020

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Section: Doped Nickel Oxide As Htmmentioning

confidence: 99%

The use of nickel oxide as a hole transport material in perovskite solar cell configuration: Achieving a high performance and stable device

et al. 2020

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“…2013 年, Snaith 等 [59] 首次将 Kim 等 [10] 将掺铜 NiO x 作空穴传输层, 铜离子的掺杂使得 NiO x 导电率提高, 从而促进了 NiO x /钙钛矿界面电荷提取更为迅速, 同时降低了器件的串联电阻, 从而使得 J sc 和 FF 提高, 器件光电转换效率为 15.40%. Zhao 等 [11] 采用溶胶-凝胶法制备 Y 3＋掺杂的 NiO 作为空穴传输层, 获得高空穴迁移率的 NiO 致密活性层, 改善了界面电荷的复合和传输, 器件光电转化效率为 16.31%. Li 等 [12] 报道了基于 Ag ＋掺杂的 NiO x (Ag:…”

Section: ) Pedot:pssunclassified

Research Progress of Inverted Perovskite Solar Cells

Yang¹,

Zhu²,

Lin³

et al. 2019

Acta Chim. Sinica

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Since the introduction of perovskite solar cells in 2009, perovskite solar cells have developed rapidly due to their low-cost and high theoretical photoelectric conversion efficiency. Among them, the inverted structure of perovskite solar cells has received more and more attention due to its good stability and low hysteresis effect. Since its inception in 2013, its photoelectric conversion efficiency has rapidly increased from the initial 3.9% to 21.5%. However, compared with the traditional upright structure perovskite solar cells, there is still a gap in the photoelectric conversion efficiency of inverted perovskite solar cells. Due to the nature of the organic materials used, perovskites are more severely affected by moisture in the air environment. They are heavily dependent on nitrogen protection during device manufacturing. In the future, if perovskite solar cells are put into production, the fully enclosed waterless environment will obviously increase the production costs. At the same time, the development of large-area preparation technology is still a difficult problem to be solved. The development of inverted perovskite solar cells, the selection of carrier transport materials, interface optimization, and the development of flexible devices are systematically reviewed in this paper. For example, PEDOT:PSS was doped by GeO 2 and DMSO, and PEDOT:PSS was modified by MoO 3 and GO to improve its work function, acidity and hygroscopicity. A NiO x dense layer is usually doped with Mg 2＋ , Li ＋ and Cs 4＋ to increase its conductivity, which can be prepared by different methods such as magnetron sputtering and sol-gel method. The PCBM interface is modified by C 60 , BCP, LiF etc., to enhance its ohmic contact with the metal counter electrode. And the PCBM is doped by graphene, CoSe, SnO 2 etc., to reduce the charge recombination caused by the interfacial resistance and the defects of the perovskite film. This paper would provide a way to obtain a high efficiency inverted perovskite solar cells by structure and material optimization. And it also give insights into the general rules for preparing large area and flexible devices.

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“…Nickel oxide (NiO) has a wide band gap (~3.6 eV), high transmittance in the visible range and an excellent chemical stability, it is thus widely used in electronic devices [1], solar cells [2,3], super-capacitors [4,5], gas sensors [6][7][8], catalysis [9,10] and so on. So far, most NiO thin films have been prepared by magnetron sputtering [11][12][13], chemical solution [14,15], thermal oxidation [16], and atomic-layer-deposition (ALD) [2,4,5].…”

Section: Introductionmentioning

confidence: 99%

Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors

Xie

Xiao

Pei

et al. 2020

Mater. Res. Express

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Nickel oxide (NiO) thin films are prepared by plasma-enhanced atomic layer deposition using nickelocene (NiCp 2 ) and oxygen (O 2 ) precursors. The effects of process parameters on the growth rate of NiO film are investigated, including deposition temperature, NiCp 2 pulse time, and O 2 plasma pulse time. In terms of deposition temperatures between 225 and 275°C, a stable growth rate of ∼0.17 Å/cycle is obtained, meanwhile, the deposited films contain Ni(II)−O, Ni(III)−O, Ni(II)−OH, C−C bonds and metallic Ni atoms, and exhibit a smooth surface with root-mean-square roughness of 0.37 nm. As the deposition temperature increases from 150 to 350°C, the deposited NiO film changes from an amorphous state to a NiO (200) orientation-dominated texture and further to NiO (111) and (200) orientations concomitant polycrystalline one; at the same time, the transmittance of the film shows a decline tendency, and the optical band gap decreases from 3.69 to 3.48 eV. Furthermore, it is found that the deposited NiO film behaves like a dielectric rather than a semiconductor, and for the NiO film deposited at 250°C, a dielectric constant of 16.7 is demonstrated together with a film composition of 51.6% Ni, 40% O and 8.4% C.

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Sol-gel-processed yttrium-doped NiO as hole transport layer in inverted perovskite solar cells for enhanced performance

Cited by 114 publications

References 41 publications

The use of nickel oxide as a hole transport material in perovskite solar cell configuration: Achieving a high performance and stable device

The use of nickel oxide as a hole transport material in perovskite solar cell configuration: Achieving a high performance and stable device

Research Progress of Inverted Perovskite Solar Cells

Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors

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