Solar-blind UV photodetectors for large area applications

Caputo, D.; Cesare, G. de; Irrera, Fernanda; Palma, F.

doi:10.1109/16.535318

Cited by 58 publications

(24 citation statements)

References 18 publications

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“…a-Si : H based photodetectors with enhanced sensitivity in the near UV range down to the wavelength (l) of 350 nm [5,6] or with sensitivity in vacuum UV (l < 200 nm) [7,8] have been reported, but no developed detector has covered the non-vacuum UV-C (200-280 nm), UV-B (280-320 nm) and UV-A (320-400 nm) ranges. Since all the detectors [5][6][7][8] applied the PIN device structure, we have investigated alternative electronic structures like NIP, PN, and NP diodes. An experimental study of the different structures in substrate configuration will be presented proving the applicability of these device structures in the non-vacuum UV range.…”

Section: Introductionmentioning

confidence: 99%

Thin-Film UV Detectors Based on Hydrogenated Amorphous Silicon and Its Alloys

Krause

Topič

Stiebig

et al. 2001

phys. stat. sol. (a)

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Thin film ultraviolet detectors based on hydrogenated amorphous silicon alloys are realized with different diode structures (PIN, NIP, PN, and NP). The PIN and NIP detectors exhibit higher sensitivity in the ultraviolet spectrum and a significant lower dark current in comparison to the PN or NP structures. The best detector performance was achieved with a 33 nm thick PIN diode. This detector shows a maximum of quantum efficiency of 36.3% at a wavelength of 310 nm. By varying the thickness of the semi-transparent Ag front contact the selectivity of the detectors with the quantum efficiency peak at 320 nm can be adjusted. Thus, the spectral sensitivity of the detector shifts from a broad UV to a selective UV-B spectrum.

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Section: Introductionmentioning

confidence: 99%

Thin-Film UV Detectors Based on Hydrogenated Amorphous Silicon and Its Alloys

Krause

Topič

Stiebig

et al. 2001

phys. stat. sol. (a)

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“…These wavelengths are able to excite or to be absorbed by the mainly studied biomolecules as DNA strands, micotoxins and cells. In the same figure the penetration depths (defined as the inverse of the a-SiC:H absorption coefficient [15]) of the utilized wavelength radiations are shown (open squares). below 30 dB at 254 nm.…”

Section: Cmrr Characterizationmentioning

confidence: 99%

Characterization of the common mode rejection ratio of amorphous silicon balanced photodiode

Caputo

Cesare

Nascetti

et al. 2010

Phys. Status Solidi (c)

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In this work we report on the detailed characterization of an amorphous silicon/amorphous silicon carbide balanced photodiode structure suitable for differential photocurrent measurements. The device is a three-terminal structure constituted by two series-connected amorphous silicon p-i-n photodiodes. Two terminals are used to bias the two photodiodes at the same reverse voltage by the readout electronics. The output signal is the current difference between the two diodes, measured at the third terminal with a transimpedance circuit. Several devices have been fabricated with different areas and geometries utilizing four mask-step process. The devices have been characterized by means of common mode rejection ratio (CMRR) measurements as a function of the radiation wavelength and intensity. The CMRR measured under white light illumination has been found to lie around 37 dB in the whole range of investigated radiation intensities. The decrease of the CMRR observed at shorter wavelengths has been ascribed to mismatches and inhomogeneities in the surface and in the p-type window layer of the two hemi-devices. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA

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“…These unfavorable conditions imply the use of silicon compatible wide bandgap semiconductor, and in particular silicon carbide. Many efforts have been devoted recently to the growth of crystalline SiC (c-SiC) on Si for the development of heterojunction devices such as bipolar transistors [1], solar cells [2], photodetectors [3] and electroluminescent components [4]. However, the high temperature processing required so far for the growth of SiC would generate high density of defects at the SiC/Si interface, owing mainly to the 20% lattice mismatch.…”

Section: Introductionmentioning

confidence: 99%

Hydrogenated nanocrystalline silicon carbide: fabrication, properties and heterostructure device application

Colder¹,

Marie²,

Pichon³

et al. 2004

phys. stat. sol. (c)

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International audienceSilicon carbide thin layers have been obtained by reactive magnetron sputtering in a hydrogen-rich plasma at substrate temperatures, Ts, varying between 200°C and 600°C. The analysis of the infrared absorption spectra reveal an abrupt transition from amorphous phase to a crystalline fraction fc exceeding 30% when Ts is increased to 300°C. The fc value continues to increase for higher values of Ts. The evolutions of the optical parameters deduced from the modeling of the spectroscopic ellipsometry spectra are quite consistent with the observed structural change. The increase of the refractive index reflects the improvement of both crystallinity and compactness of the layers, while the crystallized SiC samples appear more absorbent than monocrystalline SiC. The heterojunction diodes fabricated from the deposition of our layers on c-Si wafers have shown good rectifying behavior, as well as a low leakage current

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Solar-blind UV photodetectors for large area applications

Cited by 58 publications

References 18 publications

Thin-Film UV Detectors Based on Hydrogenated Amorphous Silicon and Its Alloys

Thin-Film UV Detectors Based on Hydrogenated Amorphous Silicon and Its Alloys

Characterization of the common mode rejection ratio of amorphous silicon balanced photodiode

Hydrogenated nanocrystalline silicon carbide: fabrication, properties and heterostructure device application

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