Solid-State Lighting Based on Light Emitting Diode Technology

Zhu, Dandan; Humphreys, C. J.

doi:10.1007/978-3-319-31903-2_5

Cited by 29 publications

(23 citation statements)

References 87 publications

(87 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The established LEDs-based technology is the key component of today’s solid-state semiconductor industry [ 148 ], where the existing LEDs technology has enabled plenty of applications, such as low cost, high-efficiency performance, smart display, and high-performance communication. However, the tuning of light-emitting spectra in LEDs’ design is quite challenging; the emission spectrum of LEDs is predefined in the fabrication process [ 149 ].…”

Section: Electroluminescence (El) Emissionsmentioning

confidence: 99%

A Review on Graphene-Based Light Emitting Functional Devices

et al. 2020

View full text Add to dashboard Cite

In recent years, the field of nanophotonics has progressively developed. However, constant demand for the development of new light source still exists at the nanometric scale. Light emissions from graphene-based active materials can provide a leading platform for the development of two dimensional (2-D), flexible, thin, and robust light-emitting sources. The exceptional structure of Dirac’s electrons in graphene, massless fermions, and the linear dispersion relationship with ultra-wideband plasmon and tunable surface polarities allows numerous applications in optoelectronics and plasmonics. In this article, we present a comprehensive review of recent developments in graphene-based light-emitting devices. Light emissions from graphene-based devices have been evaluated with different aspects, such as thermal emission, electroluminescence, and plasmons assisted emission. Theoretical investigations, along with experimental demonstration in the development of graphene-based light-emitting devices, have also been reviewed and discussed. Moreover, the graphene-based light-emitting devices are also addressed from the perspective of future applications, such as optical modulators, optical interconnects, and optical sensing. Finally, this review provides a comprehensive discussion on current technological issues and challenges related to the potential applications of emerging graphene-based light-emitting devices.

show abstract

Section: Electroluminescence (El) Emissionsmentioning

confidence: 99%

A Review on Graphene-Based Light Emitting Functional Devices

et al. 2020

View full text Add to dashboard Cite

show abstract

“…While blue InGaN-based LEDs and laser diodes have received significant attention and broad adoption for solidstate lighting, the green LED still suffers from a low external quantum efficiency (EQE) of <60% because the strain and QCSE increase with the indium mole fraction in the active region and because of the lack of an effective p-doping method [105,106]. This is far from the approximately 80% peak EQE reported for the violet-blue wavelength region using group-III nitrides [107][108][109] and for the red wavelength region using group-III arsenide/phosphide materials [110]. Thus, we reference the well-known 'green gap' in the vicinity of 530 nm [111].…”

Section: State-of-the-art Devices and Applicationsmentioning

confidence: 99%

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

Ng¹,

Holguín‐Lerma²,

Kang³

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Group-III-nitride optical devices are conventionally important for displays and solid-state lighting, and recently have garnered much interest in the field of visible-light communication. While visible-light laser technology has become mature, developing a range of compact, small footprint, high optical power components for the green-yellow gap wavelengths still requires material development and device design breakthroughs, as well as hybrid integration of materials to overcome the limitations of conventional approaches. The present review focuses on the development of laser and amplified spontaneous emission (ASE) devices in the visible wavelength regime using primarily group-III-nitride and halide-perovskite semiconductors, which are at disparate stages of maturity. While the former is well established in the violet-blue-green operating wavelength regime, the latter, which is capable of solution-based processing and wavelength-tunability in the green-yellow-red regime, promises easy heterogeneous integration to form a new class of hybrid semiconductor light emitters. Prospects for the use of perovskite in ASE and lasing applications are discussed in the context of facile fabrication techniques and promising wavelength-tunable light-emitting device applications, as well as the potential integration with group-III-nitride contact and distributed Bragg reflector layers, which is promising as a future research direction. The absence of lattice-matching limitations, and the presence of direct bandgaps and excellent carrier transport in halide-perovskite semiconductors, are both encouraging and thought-provoking for device researchers who seek to explore new possibilities either experimentally or theoretically. These

show abstract

“…So, FBG is preferred especially for longer fiber lengths. The effects of applying different input power levels on the system performance in case of using FBG as a dispersion compensator have been studied in detail [40]- [43]. It was found that as the power level increases, the fiber nonlinearity effects are also increasing.…”

Section: Introductionmentioning

confidence: 99%

Different soliton pulse order effects on the fiber communication systems performance evaluation

Eid

Mohammed

Rashed

2021

IJEECS

View full text Add to dashboard Cite

<p>The study outlined the soliton pulse order effects on the performance efficiency of the optical transceiver systems. The power after fiber is reported for various Soliton pulse order. Max optical signal power (SP) and min optical noise power (NP) are clarified versus time after optical fiber for various soliton pulse order. As well as the max electrical power amplitude against time period is demonstrated after electrical filter for various soliton pulse order. It is reported that the optical transceiver performance efficiency can be upgraded with the first soliton order pulse. The soliton technique is used for high speed communication transmission systems. Soliton technique is used to compensate the dispersion and balanced with nonlinear effects. The soliton order effects is then discussed to choose the suitable soliton order for high speed system performance efficiency. The soliton techniques can be used also for extended ultra high transmion distance with high data rates.</p>

show abstract

Solid-State Lighting Based on Light Emitting Diode Technology

Cited by 29 publications

References 87 publications

A Review on Graphene-Based Light Emitting Functional Devices

A Review on Graphene-Based Light Emitting Functional Devices

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

Different soliton pulse order effects on the fiber communication systems performance evaluation

Contact Info

Product

Resources

About