Solution growth of high-quality 3C-SiC crystals

Ujihara, Toru; Maekawa, Ryosuke; Tanaka, Ryo; Sasaki, Katsuhiro; Kuroda, Kotaro; Takeda, Yoshikazu

doi:10.1016/j.jcrysgro.2007.11.210

Cited by 37 publications

(34 citation statements)

References 16 publications

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“…For off-axis (0 0 0 1) seed crystals with an angle of 81 with respect to [11][12][13][14][15][16][17][18][19][20], the polytype of the seed crystal stably continued in the grown crystal through step-flow growth. Observing the crystal on the off-axis seed crystal carefully, however, it was found that 3C-SiC crystals grew on the wider terraces between highly bunched steps.…”

Section: Resultsmentioning

confidence: 99%

“…Carbon was supplied from the graphite crucible. Details of the growth configuration used have been described elsewhere [16]. (0 0 0 1) 6H-SiC crystals were used as seed crystals.…”

Section: Crystal Growthmentioning

confidence: 99%

“…Moreover, the solution growth process temperature is usually lower than that of the sublimation method, and is anticipated to be very suitable for highquality 3C-SiC growth. Some researchers have already attempted 3C-SiC solution growth using various techniques including containerfree liquid phase epitaxy [15], a top-seed method [16] and a traveling zone melting (TZM) method [17]. Furthermore, for stable 3C-SiC growth, the growth temperature was decreased using binary and ternary solvents [17].…”

Section: Introductionmentioning

confidence: 99%

“…In our previous study [16], we tried to grow (1 1 1) oriented 3C-SiC crystals several mm in length homoepitaxially using a top-seeded dipping method. However, 6H-SiC heterogeneously formed on the 3C-SiC substrates and no lateral enlargement was observed.…”

Section: Introductionmentioning

confidence: 99%

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High-quality and large-area 3C–SiC growth on 6H–SiC(0 0 0 1) seed crystal with top-seeded solution method

Ujihara

Seki

Tanaka

et al. 2011

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

“…Carbon was supplied from the graphite crucible. Details of the growth configuration used have been described elsewhere [16]. (0 0 0 1) 6H-SiC crystals were used as seed crystals.…”

Section: Crystal Growthmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

High-quality and large-area 3C–SiC growth on 6H–SiC(0 0 0 1) seed crystal with top-seeded solution method

Ujihara

Seki

Tanaka

et al. 2011

Journal of Crystal Growth

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“…Since melt growth is not applicable due to the incongruent melting of SiC and thus no availability of a stoichiometric melt under normal conditions, solution growth has been utilized, e.g. a top-seed method [13] and a traveling zone melting method [14]. While the latter technique has some strong constrains concerning the size, the former one gives promises for growth of large area 3C thick layers [15].…”

Section: Introductionmentioning

confidence: 99%

Progress in 3C-SiC Growth and Novel Applications

Yakimova

Vasiliauskas

Eriksson

et al. 2012

MSF

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Abstract. Recent research efforts in growth of 3C-SiC are reviewed. Sublimation growth is addressed with an emphasis on the enhanced understanding of polytype stability in relation to growth conditions, such as supersaturation and Si/C ratio. It is shown that at low temperature/supersaturation spiral 6H-SiC growth is favored, which prepares the surface for 3C-SiC nucleation. Provided the supersaturation is high enough, 3C-SiC nucleates as two-dimensional islands on terraces of the homoepitaxial 6H-SiC. Effect of different substrate surface preparations is considered. Typical extended defects and their electrical activity is discussed. Finally, possible novel applications are outlined. IntroductionSilicon carbide (SiC) has been known for long as a semiconductor material with an excellent capability to withstand high voltage, high power and high temperature in electronic switches and rectifiers. As compared to Si, silicon carbide has superior properties which allow making advancement in power and high frequency electronics. SiC is a very interesting material from crystallography and physical perspective. It has been reported to have more than 230 polytypes. Among them two hexagonal structures, 6H and 4H SiC, are most elaborated while the only cubic (3C) polytype is lagging behind in technological developments. The different polytypes can be described by the different ordering of the Si-C bilayers along the c-axis which is the normal to the close packed plane-the cubic{111} or the hexagonal{0001}one. The physical properties of different polytypes vary which imposes stringent conditions to single polytype growth. The development of SiC devices has been mainly based on 4H-SiC which compared to other polytypes has a wider band gap, higher breakdown voltage and higher mobility. However, 3C-SiC is more advantageous for MOSFETs with higher channel mobility since near interface traps are not active in the SiO 2 /3C-SiC system [1]. The reported n-channel mobility of 3C-SiC based MOSFETs is higher than that of 4H-SiC based MOSFETs [2,3]. It is expected that the 3C-based devices will have high energy efficiency and help in fighting with global warming. However, the yield of 3C-SiC based MOSFETs is still low due to the lack of device quality substrates. Hence, progress in crystal growth of 3C-SiC is a key issue for epitaxy and device developments related to this polytype.In this review we are going to present recent advancement in understanding and mastering cubic silicon carbide growth and some unexplored applications of this material.

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High‐Quality and Wafer‐Scale Cubic Silicon Carbide Single Crystals

Wang,

Sheng,

Yang

et al. 2023

Energy & Environ Materials

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Cubic silicon carbide (3C‐SiC) has superior mobility and thermal conduction over that of widely applied hexagonal 4H‐SiC. Moreover, much lower concentration of interfacial traps between insulating oxide gate and 3C‐SiC helps fabricate reliable and long‐life devices like metal‐oxide‐semiconductor field effect transistors. However, the growth of high‐quality and wafer‐scale 3C‐SiC crystals has remained a big challenge up to now despite decades‐long efforts by researchers because of its easy transformation into other polytypes during growth, limiting the development of 3C‐SiC‐based devices. Herein, we report that 3C‐SiC can be made thermodynamically favored from nucleation to growth on a 4H‐SiC substrate by top‐seeded solution growth technique, beyond what is expected by classical nucleation theory. This enables the steady growth of high‐quality and large‐size 3C‐SiC crystals (2–4‐inch in diameter and 4.0–10.0 mm in thickness) sustainable. The as‐grown 3C‐SiC crystals are free of other polytypes and have high‐crystalline quality. Our findings broaden the mechanism of hetero‐seed crystal growth and provide a feasible route to mass production of 3C‐SiC crystals, offering new opportunities to develop power electronic devices potentially with better performances than those based on 4H‐SiC.

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Solution growth of high-quality 3C-SiC crystals

Cited by 37 publications

References 16 publications

High-quality and large-area 3C–SiC growth on 6H–SiC(0 0 0 1) seed crystal with top-seeded solution method

High-quality and large-area 3C–SiC growth on 6H–SiC(0 0 0 1) seed crystal with top-seeded solution method

Progress in 3C-SiC Growth and Novel Applications

High‐Quality and Wafer‐Scale Cubic Silicon Carbide Single Crystals

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