Solution Processed Donor–Acceptor Polymer Based Electrical Memory Device with High On/Off Ratio and Tunable Properties

Arunagirinathan, Rahul Narasimhan; Gopikrishna, Peddaboodi; Das, Dipjyoti; Iyer, Parameswar Krishnan

doi:10.1021/acsaelm.9b00077

Cited by 32 publications

(32 citation statements)

References 39 publications

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“…The filament of catalytic TaO x grows toward the Cu electrode, which creates cations. [23][24][25] On return from the saturation current limit, the medium is full of space charges along with the ions. This is also dictated by the fitting of Mott-Gurney's law and we marked it as ON state.…”

Section: Resultsmentioning

confidence: 99%

Effect of Light and Heat on Polymer‐Based Resistive Random Access Memory

Mahato

Medwal

Deen

et al. 2021

Physica Rapid Research Ltrs

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Resistive random access memory (ReRAM) in metal/insulator/ metal (MIM) configurations, due to many properties, such as lower error rate, stability, applications in neuromorphic computing, memory and logic operations, and compatibility with already existing CMOS technology, has drawn huge research interest. [1][2][3][4][5] The resistive properties of transition metal oxides have been studied for two centuries. [6] However, resistive switching between two different resistive states was reported in 1967 for the first time. [7] Research efforts have been made to design two terminal flexible ReRAM devices with low leakage current, high endurance, and high integration density [8,9] in various active media including chalcogenides such as GeSbTe, GeSe, AgInSbTe, [10] halide and oxide perovskites such as BiFeO 3 , PCMO, and a-LSMO, [11] and other oxides such as SiO 2 , HfO 2 , Ta 2 O 5 , TiO 2 , and NiO. [12,13] A variety of materials such as ferroelectric tunnel junction BaTiO 3 = LaSrMnO 3 , [14] quantized conductance in graphene nanoplatelet ribbons suspended in 3-hexylthiophene polymer, [15] and chitosan with Pt/Ag doping [16] have been reported to achieve multiple resistive states. Recently, exploration of valance change resistive effect in polymer medium has drawn huge attention because its sensitivity to external stimuli. Polymers have added advantage over other media because they are cheap, sensitive, flexible and environment friendly, which can be used to realize the wearable flexible electronics devices. [17][18][19][20] Smart polymers, which can change their shape, volume, color, and electric resistance with external stimuli factors such as pH, electric field, magnetic field, and temperature, can provide an avenue to tune their resistive states with external factors. Deen et al. has successfully demonstrated the phase transition with temperature in poly(N-isopropylacrylamide) (PNIPAM). [2,21] This multiresponsive behavior with said external environmental factors allows us to achieve multifunctional memory elements for electronic and bioelectronics devices. [22] However, considerable efforts have not been made to investigate the effect of light and thermal energy on the resistive states of the smart polymer-based memristors. In this article, we demonstrate the repeatability, light, and heat sensitivity of valence change polymer ReRAM using PRPC as the active medium.

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Section: Resultsmentioning

confidence: 99%

Effect of Light and Heat on Polymer‐Based Resistive Random Access Memory

Mahato

Medwal

Deen

et al. 2021

Physica Rapid Research Ltrs

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“…The good electron‐withdrawing capability of phthalimide is also promising for its use as an electron acceptor in polymer memristors. Recently, Iyer and co‐workers utilized Suzuki coupling reaction to synthesize a series of PFONPN xx (P5), a conjugated copolymer of N ‐phenyl‐1,8‐naphthalimide (NPN) and poly[2,7‐(9,9′‐dioctylfluorene)] (PFO), where xx denotes the content of the NPN moiety added into PFO backbone 70 . The fluorene backbone serves as the electron donor while the NPN segment acts as the electron acceptor.…”

Section: Conjugated Memristive Polymers For Data Storage Memoriesmentioning

confidence: 99%

Conjugated polymers for information storage and neuromorphic computing

Liu

Chen

Liu

2020

Polymer International

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In the era of information explosion, silicon‐based storage can barely meet the burgeoning demand for data storage and making Moore's law no longer accurate. What is more, the traditional von Neumann architecture separates the computing module from the storage unit, which causes a slowing down of the overall computing efficiency. Conjugated polymer memristors, due to the advantages of simple fabrication, convenient operation and low cost, are considered as promising candidates for next‐generation memory and neuromorphic computing applications. This review summarizes the advances in conjugated polymer memristive materials and devices made during the first two decades of the 21st century, and their potential applications in information storage and neuromorphic computing. Focuses are on switching mechanisms and materials classifications, as well as memory, artificial synapse and bioinspired and in‐memory computing performance. © 2020 Society of Chemical Industry

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“…Non‐volatile switching is often classified into three types based on the current‐voltage ( I – V ) characteristics of the diodes viz ., write‐once‐read‐many‐times (WORM), unipolar, and bipolar switching memory [24,25] . WORM‐type memory devices show electrically irreversible switching characteristics, and the original state is never recovered [26,27] . Owing to numerous important aspects such as their low‐cost of synthesis, ease to process, fast switching speed, and less power consumption, such resistive memory devices are gaining a lot of attention from the perspective of large scale data storage [28] .…”

Section: Introductionmentioning

confidence: 99%

Irreversible Resistive State Switching in Devices with a Homoleptic Cobalt(II) Complex Active Layer

Barman

Khatua

Goswami

et al. 2021

Chemistry An Asian Journal

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Molecules with bi‐stable electronic transport behaviour have been in upfront research topics of the molecular semiconductor devices in the past few decades due to the use of such materials in resistive data storage devices. Transition metal complexes (TMC) are expected to be potential candidates in regard to the tunable and manifold redox behaviour expecting multiple bulk transport states. Finding alternate mechanisms in such devices with TMC as the active layer materials would revoke the multifaceted approach to the functional gain. We have succeeded in demonstrating write once‐read many (WORM) type of resistive memory device using a homoleptic Cobalt(II) (Co(II)) complex with large on/off current ratio ensuring the easy readout process at lower voltage. The advantage of this device was the turn on voltage was found to be the low (<2.7 V) operational voltage and the success ratio of the devices were more than 83%. The durability of the stored data was found to be more than 35,000 seconds which ensures the stability of the bistable state in the fabricated devices. Such ambient stable, solution processable devices are important for the large‐scale printable devices. The manuscript describes the preparation, optical and electrochemical characterisation of the metal complex used along with a detailed mechanistic investigations and electrical characterisation of memory device obtained from a stable cobalt complex.

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Solution Processed Donor–Acceptor Polymer Based Electrical Memory Device with High On/Off Ratio and Tunable Properties

Cited by 32 publications

References 39 publications

Effect of Light and Heat on Polymer‐Based Resistive Random Access Memory

Effect of Light and Heat on Polymer‐Based Resistive Random Access Memory

Conjugated polymers for information storage and neuromorphic computing

Irreversible Resistive State Switching in Devices with a Homoleptic Cobalt(II) Complex Active Layer

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