Solution-processed ytterbium oxide dielectrics for low-voltage thin-film transistors and inverters

Guo, Zidong; Liu, Ao; Meng, You; Fan, Caixuan; Shin, Byoungchul; Liu, Guoxia

doi:10.1016/j.ceramint.2017.08.052

Cited by 57 publications

(38 citation statements)

References 41 publications

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“…Based on Table , it can be seen that the In 2 O 3 TFTs based on 250 °C annealed ZrGdO x dielectrics exhibit improved electrical performance, i.e., a high µ FE of 18.82 cm 2 V −1 s −1 , a large I on / I off of around 6.01 × 10 7 , and a turn‐on voltage ( V on ) of close to 0 V. To our best knowledge, such a mobility is the highest compared with previous reports on In 2 O 3 ‐based TFTs via fully water‐induced route (indicated in Table 2 ). [3,12b,c,13,25a,26a,33] The negligible hysteresis observed indicates that there are small amounts of bulk traps within the In 2 O 3 channel layer and interface traps between the ZrGdO x dielectric and the In 2 O 3 channel layer. Particularly, a small SS value, defined as V GS required increasing I DS by one decade, is calculated to be 86 mV dec −1 .…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, these materials can be processed at low temperatures, allowing the use of low cost flexible substrates . Despite their short history, performance of metal oxide semiconductor based TFTs, especially the carrier mobility, has already been demonstrated to exceed that of amorphous Si‐based TFTs, and their stability rivals or exceeds that of typical organic semiconductors . As a result, metal oxide–based TFTs have become the mainstream building blocks in fabricating the next‐generation flat panel display devices.…”

Section: Introductionmentioning

confidence: 99%

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Nontoxic, Eco‐friendly Fully Water‐Induced Ternary Zr–Gd–O Dielectric for High‐Performance Transistors and Unipolar Inverters

Zhu

et al. 2018

Adv Elect Materials

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In this context, a simple, nontoxic, and eco‐friendly fully water‐induced (WI) route to fabricate ternary ZrGdOx thin films at various annealing temperatures is reported. Annealing temperature dependent microstructure, morphology, optical, electrical properties, and chemical bonding states of the WI ZrGdOx thin films are investigated by x‐ray diffraction, atomic force microscopy, optical spectroscopy, x‐ray photoelectron spectroscopy, and electrical measurements. A low leakage current density of 10−8 A cm−2 at 1 mV cm−1 and a large areal capacitance of 531 nF cm−2 at 20 Hz are observed for 400 °C‐annealed ZrGdOx thin films. To verify the possible applications of ZrGdOx thin films as the gate dielectric in thin‐film transistors (TFTs), WI In2O3/ZrGdOx TFTs are integrated. 250 °C‐derived full oxide In2O3/ZrGdOx TFTs have demonstrated high electrical performance and low operating voltage, including high µFE of 18.82 cm2 V−1 S−1, threshold voltage shift of 0.46 V under positive bias stress for 3600 s, and a large Ion/Ioff of 6.01 × 107, respectively. Finally, a low voltage resistor‐loaded unipolar inverter is built using In2O3/ZrGdOx TFT, exhibiting a linear relationship between supplied voltage and gain voltage and a maximum gain of 7.4 at 2.5 V. These optimized parameters have achieved a low operating voltage of 2 V, which represents a great step toward the achievement of low‐cost, low‐power consumption, and large‐area all‐oxide flexible electronics.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nontoxic, Eco‐friendly Fully Water‐Induced Ternary Zr–Gd–O Dielectric for High‐Performance Transistors and Unipolar Inverters

Zhu

et al. 2018

Adv Elect Materials

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“…In particular, cerium oxide (CeO 2 ) is encouraging for catalysis, [7] water splitting, [8] solid oxide fuel cells, [9] protective coatings, [10] and is also considered as a possible high‐κ gate dielectric material in complementary metal‐oxide‐semiconductor devices [11] . Yb containing films are finding increasing attention in the advancement of semiconductor devices [12] with ytterbium‐doped optical fibers being relevant for high power laser applications [13] . Thus, recently the interest in the growth of high‐quality RE‐based materials [14] has been on the rise, particularly for conformal coatings with a precise tunable thickness on complex architectures which can be obtained by atomic layer deposition (ALD) [15] …”

Section: Introductionmentioning

confidence: 99%

Rational Development of Guanidinate and Amidinate Based Cerium and Ytterbium Complexes as Atomic Layer Deposition Precursors: Synthesis, Modeling, and Application

Kaur

Mai

Muriqi

et al. 2021

Chemistry A European J

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Owing to the limited availability of suitable precursors for vaporp hase deposition of rare-earth containing thin-filmm aterials, new or improved precursors are sought after.I nt his study,w ee xplored new precursors for atomic layer deposition(ALD)o fc erium (Ce) and ytterbium(Yb) containing thin films. As eries of homoleptic tris-guanidinate and tris-amidinatec omplexes of cerium (Ce) and ytterbium (Yb) were synthesized andt horoughlyc haracterized. The Csubstituents on the N-C-N backbone (Me, NMe 2 ,N Et 2 ,w here Me = methyl, Et = ethyl) and the N-substituents from symmetrical iso-propyl (iPr) to asymmetrical tertiary-butyl (tBu) and Et were systematically varied to study the influence of the substituents on the physicochemical properties of the resulting compounds. Single crystal structures of [Ce(dpdmg) 3 ] 1 and [Yb(dpdmg) 3 ] 6 (dpdmg = N,N'-diisopropyl-2-dimethylamido-guanidinate) highlightamonomeric nature in the solid-state with ad istorted trigonal prismatic geometry.T he thermogravimetric analysis shows that the complexes are volatile and emphasize that increasing asym-metryi nt he complexes lowers their meltingp oints while reducingt heir thermal stability.D ensityf unctionalt heory (DFT) was used to study the reactivity of amidinates and guanidinates of Ce and Yb complexes towards oxygen (O 2) and water (H 2 O). Signified by the DFT calculations, the guanidinates show an increased reactivity toward water compared to the amidinate complexes. Furthermore,t he Ce complexes are more reactive compared to the Yb complexes,i ndicating even ar eactivity towards oxygen potentiallye xploitable for ALD purposes. As arepresentative precursor,the highly reactive [Ce(dpdmg) 3 ] 1 wasu sed for proof-of-principleA LD depositions of CeO 2 thin films using watera sc o-reactant. The self-limited ALD growth process could be confirmed at 160 8Cw ithp olycrystalline cubic CeO 2 films formed on Si(100) substrates. This study confirmst hat moving towards nitrogen-coordinated rare-earth complexes bearing the guanidinate and amidinate ligands can indeed be very appealing in terms of new precursors for ALD of rare earth based materials.

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“…It is found that all the NdAlO 3 thin films exhibit high transparency (over 90%) in the visible region, indicating their potential application in transparent electronics. The transmittance of NdAlO 3 thin film is decreased with the temperature, which is ascribed to the annihilation of the interstitial oxygen at high temperatures 36,37. Based on the transmittance spectra, the band gap ( E g ) of the NdAlO 3 thin films were calculated from the Tauc plot (Figure S1, Supporting Information) and summarized in the inset of Figure 3.…”

Section: Key Electrical Parameters Of Tfts Based On Ndalo3 Thin Film mentioning

confidence: 99%

“…For the NdAlO 3 thin films annealed at the elevated temperatures, oxygen vacancies and defects are decreased. Both of the light absorption and the localized states in the forbidden gap are reduced accordingly, giving rise to the increase of the E g 36,37…”

Section: Key Electrical Parameters Of Tfts Based On Ndalo3 Thin Film mentioning

confidence: 99%

Solution‐Processed High‐Performance p‐Type Perovskite NdAlO₃ Thin Films for Transparent Electronics

Xin

Ding

Zhu

et al. 2020

Adv Elect Materials

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Transparent oxide semiconductors exhibit great potential as fundamental building blocks for electronic applications. However, the lack of high‐performance p‐type oxide materials limits their potential applications for transparent electronics. Ternary p‐type perovskite NdAlO3 thin films are prepared by spin coating and annealed at various temperatures. It is demonstrated that neodymium vacancies (VNd) is generated in NdAlO3 thin film, and the presence of VNd results in high hole mobility. The thin‐film transistors (TFTs) based on NdAlO3 thin film are integrated and exhibit typical p‐channel transistor behavior. The TFT based on NdAlO3 thin film annealed at 700 °C exhibits an optimized electrical performance, including a field‐effect mobility (µFE) of 0.19 cm2V−1s−1 and an on/off current ratio (Ion/Ioff) of ≈105. When high‐k Al2O3 dielectric is integrated into the TFTs, the µFE and Ion/Ioff are further improved to 9.93 cm2V−1s−1 and ≈106, respectively. The fabrication of a p–n junction based on p‐NdAlO3/n‐In2O3 heterojunction further confirms the excellent p‐type performance of the perovskite NdAlO3 thin films. This work not only demonstrates the possibility of p‐type perovskite NdAlO3 thin films applicable for transparent electronics, but also provides guidelines for the design of novel p‐type oxide semiconductors.

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Solution-processed ytterbium oxide dielectrics for low-voltage thin-film transistors and inverters

Cited by 57 publications

References 41 publications

Nontoxic, Eco‐friendly Fully Water‐Induced Ternary Zr–Gd–O Dielectric for High‐Performance Transistors and Unipolar Inverters

Nontoxic, Eco‐friendly Fully Water‐Induced Ternary Zr–Gd–O Dielectric for High‐Performance Transistors and Unipolar Inverters

Rational Development of Guanidinate and Amidinate Based Cerium and Ytterbium Complexes as Atomic Layer Deposition Precursors: Synthesis, Modeling, and Application

Solution‐Processed High‐Performance p‐Type Perovskite NdAlO₃ Thin Films for Transparent Electronics

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Solution-processed ytterbium oxide dielectrics for low-voltage thin-film transistors and inverters

Cited by 57 publications

References 41 publications

Nontoxic, Eco‐friendly Fully Water‐Induced Ternary Zr–Gd–O Dielectric for High‐Performance Transistors and Unipolar Inverters

Nontoxic, Eco‐friendly Fully Water‐Induced Ternary Zr–Gd–O Dielectric for High‐Performance Transistors and Unipolar Inverters

Rational Development of Guanidinate and Amidinate Based Cerium and Ytterbium Complexes as Atomic Layer Deposition Precursors: Synthesis, Modeling, and Application

Solution‐Processed High‐Performance p‐Type Perovskite NdAlO3 Thin Films for Transparent Electronics

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Solution‐Processed High‐Performance p‐Type Perovskite NdAlO₃ Thin Films for Transparent Electronics