Solution-Processed Zinc Oxide Transistors for Low-Cost Electronics Applications

Subramanian, Vivek; Bakhishev, Teymur; Redinger, David; Volkman, Steven K.

doi:10.1109/jdt.2009.2029124

Cited by 38 publications

(23 citation statements)

References 14 publications

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“…38 Another important feature of the fabricated TFTs is its low operation voltage (∼3.4 V) compared with organic based devices. 3,39,40 In addition, the method demonstrated here can be easily transferred to inexpensive processes such as roll-to-roll printing. Furthermore, the n-type devices demonstrated here can be combined with p-type organic materials to enable hybrid CMOS circuits.…”

Section: Resultsmentioning

confidence: 99%

Inkjet Printed Thin Film Transistors Using Cadmium Sulfide as Active Layer Prepared by In-Situ Micro-Reaction

Ramos

Kabir

Mejía

et al. 2013

ECS Solid State Letters

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We demonstrate an additive ink-jet process to fabricate homogeneous CdS semiconductor films for thin film transistors (TFTs). This process combines in-situ synthesis with ink-jet printing at a maximum processing temperature of 250 • C. The solvent in the reaction is used to dissolve the cadmium and sulfur precursors. The reaction to form the CdS films takes place in a solid-state mode. This method does not require preliminary nanoparticles synthesis or organic stabilizers and results in film with near zero precursor waste. TFTs with mobilities of 7.5 × 10 −2 cm 2 /V · s, threshold voltage (V T ) of 3.4 V and on/off current ratio of 8 × 10 4 were demonstrated.Printed electronics have become a promising technology for flexible electronics. Besides the inexpensive aspect of Inkjet printing, additional advantages include the ability to deposit a wide range of materials, as well as low material wastage. 1-6 Currently, most inkjetprinted semiconductors for flexible electronics are organic, which typically have poor performance with mobilities around 0.1-1 cm 2 /V · s. Stability is also a potential issue for organic materials since its poor air and moisture stability compromise device reliability. 7 On the other hand, inorganic materials, in particular chalcogenide nanoparticles, have attracted the attention because these materials can be solutionprocessed and are chemically stable upon exposure to air. 8 Recently, several authors have reported cadmium sulfide (CdS) semiconductor films and other inorganic layers using printed nanoparticles to demonstrate TFTs. 9-12 Nevertheless, inorganic inks require the synthesis of nanoparticles with tight particle size control and further stabilization to eliminate aggregation and precipitation. One way to eliminate this issue is to use organic stabilizers. However, such stabilizers could act as insulating layers and hinder efficient carrier transport with the concomitant poor electrical performance. 13 In addition, subsequent high temperature annealing processes are necessary to eliminate the organic binders and to further sinter the nanoparticles. This annealing can also result in film cracking and peeling-off. 6 In this letter, we report an inexpensive and low material wastage additive method to grow CdS thin-films for active layer in TFTs. This is an easy and simple process that combines merits of in-situ synthesis where the reaction happens directly at the interface with the substrate (dielectric in this case). Ink-jet printing is used to selectively deposit the material in the desired area and to eliminate further patterning. ExperimentalThe ink was prepared with cadmium acetate dihydrate (Cd(CH 3 COO) 2 · 2H 2 O) [0.1 M] and thiourea (CH 4 N 2 S) [0.2 M] mixed in methanol/ethylene glycol (ratio 95:05). TFTs were fabricated using bottom-gate top-contact architecture. To fabricate the TFTs, 500 nm of SiO 2 were thermally grown on a Si wafer as buffer layer. Then, 5 nm of chrome followed by 100 nm of gold were deposited by E-beam evaporation and patterned to form the gate contac...

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Section: Resultsmentioning

confidence: 99%

Inkjet Printed Thin Film Transistors Using Cadmium Sulfide as Active Layer Prepared by In-Situ Micro-Reaction

Ramos

Kabir

Mejía

et al. 2013

ECS Solid State Letters

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“…13,14 Zinc oxide is a semiconductor characterized by a high energy gap (3.4 eV), high exciton binding energy (60 meV) and easy n-type doping. 15,16 Zinc oxide, ZnO, obtained with the use of the ALD technique on a sialonceramic substrate enables the polarization of this substrate during the technological process of PVD and, hence, the objective of this paper is to investigate the impact of the ZnO layer obtained with the use of the ALD technique on the adhesion of the hybrid coating ALD/PVD of the ZnO/(Ti,Al)N type to the sialon substrate. For the sake of comparison, we also investigated the coatings on sintered carbide substrates.…”

Section: Introductionmentioning

confidence: 99%

Investigation studies involving wear-resistant ALD/PVD hybrid coatings on sintered tool substrates

Staszuk¹,

Pakuła²,

Tański³

2016

Mater. Tehnol.

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This paper is an important research contribution to the development of PVD coatings, in particular, on ceramic substrates, which, due to their dielectric properties, are difficult materials to coat using this technique. In order to satisfy the desired expectations relating to the PVD coatings, one of the basic properties must be provided for, the adherence to the substrate. The main aim of this research is to investigate the structure and mechanical properties of the coatings deposited in a hybrid process, comprising the atomic-layer deposition (ALD) and cathodic-arc evaporation (CAE-PVD) on sintered carbides and multipoint ceramic cutting tools. The concept of this research study involves an execution and investigation of ALD + PVD hybrid coatings on sintered carbides and a sialon-ceramic substrate, and defining the influence of the ALD interlayer on the adherence of the investigated coatings. The critical load Lc, which is the adhesion measure of coats, was determined with the scratch-test method and a tribological test made with a pin-on-disk tester. Observations of the surface topography and wear mechanism were performed using a scanning electron microscope and atomic-force microscopy. The investigation studies showed that an ALD layer considerably improves the adherence of the PVD layer to the tool-ceramic substrate. The research of the coatings on sintered-carbide substrates showed that the adherence of the PVD coating to the substrate deteriorates in the case of applying an ALD interlayer. Keywords: PVD, ALD, hybrid coatings, tool ceramics, sintered carbideŝ lanek je pomemben raziskovalni prispevek k razvoju PVD nanosov, {e posebno na kerami~ni podlagi, ki je zaradi dielektri~nih lastnosti zahteven material za nana{anje s to tehniko. Da bi zadovoljili pri~akovanja na delu s PVD nanosom, je oprijemljivost na podlago osnovna lastnost, na katero je potrebno biti pozoren. Glavni namen raziskave je preiskati strukturo in mehanske lastnosti nanosa, nane{enega s hibridnim postopkom, ki obsega nanos atomskih plasti (ALD) in katodno izparevanje v obloku (CAE-PVD) na sintrane karbide in ve~to~kovno kerami~no rezilno orodje. Koncept te raziskave vklju~uje izvedbo in preiskavo hibridnega nanosa ALD + PVD na podlago iz sintranih karbidov in sialon keramike ter dolo~itev vpliva vmesne plasti ALD na oprijemljivost preiskovanih nanosov. Kriti~na obremenitev Lc, ki je merilo oprijemljivosti nanosov, je bilo dolo~eno s preizkusom razenja in s tribolo{kim preizkusom trn na plo{~i. S pomo~jo vrsti~nega elektronskega mikroskopa in mikroskopa na atomsko silo je bilo izvedeno opazovanje topografije povr{ine in mehanizma obrabe. Izvedene preiskave ka`ejo, da ALD nanos mo~no izbolj{a oprijemljivost PVD nanosa na orodno keramiko. Pri nanosu na podlago iz sintranega karbida je raziskava pokazala, da je pri uporabi ALD vmesne plasti, oprijemljivost PVD nanosa slab{a.

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“…It was demonstrated from the GDOES analysis that in the contact zone, from the surface of the coatings, there is a rise in the concentration of the elements that are components of the substrate, with a simultaneous decrease of the concentration of those elements which are components of the coating. As suggested by the authors of earlier works [15][16][17][18][19][20][21][22][23][24][25], this may be due to the presence of a transit zone of a diffusive character between the substrate material and the coating, although we cannot rule out the possibility of simultaneous non-homogeneous evaporation of the material from the surface of the samples during the glow discharge spectrometer tests.…”

Section: Resultsmentioning

confidence: 84%

“…The rapid development of PVD technology started in the eighties, associated with a wide use of refractory compounds of carbon, nitrogen and boron, in particular with transition metals, as deposition of a thin, hard, anti-wear coating is one of the most important ways to reduce tool wear. Reducing the wear rate and increasing the durability, a low coefficient of thermal conductivity and wear on the effects of high temperature, and in many cases reducing the oxidation and corrosion processes largely determines the use of coatings obtained in the PVD process and, in some cases, the CVD process for coating of tool materials [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

Investigations on Wear Mechanisms of PVD Coatings on Carbides and Sialons

Staszuk

Pakuła

Pancielejko

et al. 2017

Archives of Metallurgy and Materials

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The paper presents the results on the wear resistance of PVD coatings on cutting inserts made from sintered carbide and sialon ceramics. The exploitative properties of coatings in technological cutting trials were defined in the paper, which also examined the adhesion of coatings to the substrate, the thickness of the coating, and the microhardness. As a result, it was found that isomorphic coating with AlN-h phase of covalent interatomic bonds exhibits much better adhesion to the sialon substrate than isomorphic coating with titanium nitride TiN. These coatings assure the high wear resistance of the coated tools, and the high adhesion combined with the high microhardness and fine-grained structure assure an increase in the exploitative life of the coated tools. In the case of coatings on substrate made from sintered carbide, there was a significant influence on the properties of the tools coated with them as concerns the existence of the diffusion zone between the substrate and the coating.

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Solution-Processed Zinc Oxide Transistors for Low-Cost Electronics Applications

Cited by 38 publications

References 14 publications

Inkjet Printed Thin Film Transistors Using Cadmium Sulfide as Active Layer Prepared by In-Situ Micro-Reaction

Inkjet Printed Thin Film Transistors Using Cadmium Sulfide as Active Layer Prepared by In-Situ Micro-Reaction

Investigation studies involving wear-resistant ALD/PVD hybrid coatings on sintered tool substrates

Investigations on Wear Mechanisms of PVD Coatings on Carbides and Sialons

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