Source-Drain Junction Engineering Schottky Barrier MOSFETs and their Mixed Mode Application

Kumar, Prashanth; Bhowmick, Brinda

doi:10.1007/s12633-019-00170-0

Cited by 26 publications

(9 citation statements)

References 24 publications

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“…Nowadays, some of the latest experiments and modeling methods are showed in the table. For example, in SB-MOSFETS [9], p-type and n-type SB-MOSFETs were modeled through the combination of n-type and p-type DS SB-MOSFETs, and a digital inverter circuit with high gain was designed to realize the complementary SB-MOSFETS (C-SBMOSFET). Compared with traditional CMOS at the same voltage.…”

Section: -D Transistorsmentioning

confidence: 99%

Analysis on the Electrostatic Doping and Several Alternative Devices

2022

J. Phys.: Conf. Ser.

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With the development of semiconductor technology, the size of precision instruments is becoming more and more stringent. The purpose of electrostatic doping is to provide a possibility on nanoscale semiconductor devices and to replace chemical doping, it also replaces donor/receptor doping with Gate-Induced free electron/hole charges in ultra-thin MOS (Metal-Oxide-Semiconductor) structures, and provide some areas with high electron/hole density in semiconductor devices. This paper introduces Electrostatic Doping methods and Several Alternative Devices, emphasizing the functions of metal and semiconductor operation functions, energy band gaps and applied electric fields, and their interaction in induced ED. In addition, this paper discusses the advantages of ED devices and the major potential obstacles to future CMOs, and the modeling and experimental implementation of this approach will help to implement and evaluate the possibility of replacing traditional doping methods for innovative devices for future CMOs.

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Section: -D Transistorsmentioning

confidence: 99%

Analysis on the Electrostatic Doping and Several Alternative Devices

2022

J. Phys.: Conf. Ser.

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“…To overcome this problem, people try to form source/drain (S/D) regions with metals to replace doping based abrupt junctions. The price is the formation of the Schottky barrier between metal S/D and semiconductor; therefore, the device is called Schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET). − It should be noted that the Schottky barrier (SB) is not designed as a feature that helps to improve the device characteristics but as a last resort. The conduction types of SB-MOSFET are decided by the SB heights formed on the interface between the S/D metal material and the semiconductor region.…”

Section: Introductionmentioning

confidence: 99%

Structural Optimized H-Gate High Schottky Barrier Bidirectional Tunnel Field Effect Transistor

Liu,

Li,

et al. 2023

ACS Appl. Electron. Mater.

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In this work, we proposed a structural optimized H-shaped gate bidirectional tunnel field effect transistor with high on-state current based on high Schottky barrier plug-in source–drain contacts and central assistant gate (H-Gate HSB-BTFET). Compared to the previously proposed high Schottky barrier bidirectional tunnel field effect transistor (HSB-BTFET), the proposed H-Gate BTFET achieves excellent switching characteristics such as better forward on-state current, lower subthreshold swing (SS), lower power consumption, higher I on–I off ratio, and lower band to band tunneling (BTBT) induced leakage. The physical mechanism of device performance improvement is explained, analyzed, and compared with HSB-BTFET. In addition, no more complex process technology and expensive millisecond annealing process are needed; the proposed H-Gate BTFET can be used as an alternative candidate for mainstream integration technology.

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“…Investigation of temperature’s effect on reliability issues of ferroelectric DS SB TFET reveals that the presence of a ferroelectric layer and the resulting negative capacitance effect increases the ON current, achieves highest I ON /I OFF ratio and reduces the SS to 23 mV/dec at 300 K [ 21 ]. Silicon on insulator SB-MOSFET (SOI SB-MOSFET) with source extension (SE) and with source drain extension (SDE) significantly reduces drain-induced barrier tunneling and produces higher I ON /I OFF and lower subthreshold swing (SS) than SOI SB-MOSFET [ 22 ].…”

Section: Introductionmentioning

confidence: 99%

Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor

et al. 2023

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A novel Schottky barrier MOSFET with quad gate and with source engineering has been proposed in this work. A high-κ dielectric is used at the source side of the channel, while SiO2 is used at the drain side of the channel. To improve the carrier mobility, a SiGe pocket region is created at the source side of the channel. Physical and electrical characteristics of the proposed device are compared with conventional double gate Schottky barrier MOSFET. It has been observed that the proposed device exhibits better performance, with a higher ION/IOFF ratio and lower subthreshold slope. The high-κ dielectric, along with the SiGe pocket region, improves tunneling probability, while aluminum, along with SiO2 at the drain side, broadens the drain/channel Schottky barrier and reduces the hole tunneling probability, resulting in a reduced OFF-state current. Further, the proposed device is used as a biosensor to detect both the charged and neutral biomolecules. Biosensors are made by creating a nanocavity in the dielectric region near the source end of the channel to capture biomolecules. Biomolecules such as streptavidin, biotin, APTES, cellulose and DNA have unique dielectric constants, which modulates the electrical parameters of the device. Different electrical parameters, viz., the electric field, surface potential and drain current, are analyzed for each biomolecule. It has been observed that drain current increases with the dielectric constant of the biomolecules. Furthermore, the sensitivity and selectivity of the proposed biosensors is better than that of conventional biosensors made using double gate Schottky barrier MOSFETs. Sensitivity is almost twice that of a conventional sensor, while selectivity is six to twelve times higher than a conventional one.

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Source-Drain Junction Engineering Schottky Barrier MOSFETs and their Mixed Mode Application

Cited by 26 publications

References 24 publications

Analysis on the Electrostatic Doping and Several Alternative Devices

Analysis on the Electrostatic Doping and Several Alternative Devices

Structural Optimized H-Gate High Schottky Barrier Bidirectional Tunnel Field Effect Transistor

Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor

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