Space groups of coincidence-site lattice dichromatic patterns in the cubic system

Vlachavas, D. S.

doi:10.1107/s0108767385001179

Cited by 9 publications

(2 citation statements)

References 7 publications

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“…They show different inclination but their traces on the wafer surface are identical. Furthermore, we can distinguish between {110} and {211} twin planes that correspond to mirror and anti-mirror planes m and m 0 , respectively (Vlachavas, 1985 Combined pole figures from green and purple individuals of the straight line twins in Fig. 2.…”

Section: Large-angle Grain Boundariesmentioning

confidence: 98%

“…This type of twinning is known to form the often observed 'straight line twins', which are bunches of straight grain boundaries orientated parallel to each other (Wü rzner et al, 2010). The AE9 and AE27a grain boundaries are twins of higher order (Vlachavas, 1985) and are formed via a sequence of twinning reactions between first-and higher-order twin boundaries, e.g. AE3 þ AE3 !…”

Section: Introductionmentioning

confidence: 99%

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Large- and small-angle grain boundaries in multi-crystalline silicon and implications for the evolution of grain boundaries during crystal growth

Carl¹,

Danilewsky²,

Meissner³

et al. 2014

J Appl Cryst

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A detailed study of twin-, large-angle and small-angle grain boundaries over a small volume of multi-crystalline silicon is presented on the basis of electron backscatter diffraction and synchrotron X-ray topography (SXRT) measurements. Identical areas (ca 6 mm 2) of two nearest neighbour wafers from a directional solidified Si column were analysed in order to gain information about the evolution of grain boundaries during the crystal growth process. Therefore, the emphasis was placed on the evolution of one particular grain and its neighbouring grains. In the case of 'straight line' Sigma 3 grain boundaries, no change is observed if the twin plane corresponds to a {211} plane. Significant changes are found for non-straight line boundaries: while curved Sigma 3 grain boundaries are formed and eliminated very frequently, the Sigma 9 and Sigma 27a grain boundaries undergo only minor changes. By means of SXRT imaging, it is shown that the microstructure of the analysed grain exhibits numerous small-angle grain boundaries with angles in the range between 0.003 and 0.02 degrees, corresponding to a theoretical dislocation density of the order of 10(7)-10(8) cm(-2). The experiments give evidence that the small-angle grain boundaries with the larger angles extend, while those with smaller angles vanish during growth

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Section: Large-angle Grain Boundariesmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Large- and small-angle grain boundaries in multi-crystalline silicon and implications for the evolution of grain boundaries during crystal growth

Carl¹,

Danilewsky²,

Meissner³

et al. 2014

J Appl Cryst

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The correlation between spatial alignment of dislocations, grain orientation, and grain boundaries in multicrystalline silicon

Schmid

Würzner

Funke

et al. 2011

Cryst. Res. Technol.

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An experimental study of the correlation between dislocations, grain orientation, and grain boundaries in multicrystalline silicon (mc‐Si) bulk crystals is presented. Selected mc‐Si samples revealing typical structural patterns like clustering or line‐up of dislocations in the vicinity of grain boundaries are measured by electron backscatter diffraction (EBSD). The orientation of dislocation slip planes and twin boundary planes as well as the relationship between the misorientation of neighbouring grains and the spatial alignment of dislocations are analyzed on the basis of the relevant pole figures calculated from EBSD scans. The effect of grain boundaries on the behaviour of dislocations seems to be related to the presence or absence of a common slip system on both sides of the boundary and hence, to the type of lattice misorientation between involved grains. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Symmetries of migration‐related segments of all [001] coincidence site lattice tilt boundaries in (001) projection for all holohedral cubic materials

Moeck

York

Browning

2014

Crystal Research and Technology

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Utilizing bicrystallography in two dimensions (2D), the symmetries of migration related segments of Coincidence Site Lattice (CSL) boundaries are predicted for projections along their [001] tilt axis in grain boundaries of crystalline materials that possess the holohedral point symmetry of the cubic system (i.e. m3m). These kinds of "edge-on" projections are typical for atomic resolution imaging of such tilt boundaries with Transmission Electron Microscopes (TEM). Such images from a recently published aberration-corrected Z-contrast scanning TEM investigation [H. Yang et al., Phil. Mag. 93 (2013) 1219 and other studies facilitate the direct visual confirmation of our frieze symmetry predictions with experimental results.

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Space groups of coincidence-site lattice dichromatic patterns in the cubic system

Cited by 9 publications

References 7 publications

Large- and small-angle grain boundaries in multi-crystalline silicon and implications for the evolution of grain boundaries during crystal growth

Large- and small-angle grain boundaries in multi-crystalline silicon and implications for the evolution of grain boundaries during crystal growth

The correlation between spatial alignment of dislocations, grain orientation, and grain boundaries in multicrystalline silicon

Symmetries of migration‐related segments of all [001] coincidence site lattice tilt boundaries in (001) projection for all holohedral cubic materials

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